摘要:
An infrared (IR) detector comprises a radio frequency (RF) resonator including a bottom electrode to provide acoustic excitation, a piezoelectric layer connected to the bottom electrode and suspended over a cavity defined within a semiconductor substrate, and a top layer comprising a mid-IR metamaterial and which is connected to the piezoelectric layer of the RF resonator. The top layer and the piezoelectric layer are sized to impedance match with a particular IR wavelength, to minimize reflection and maximize absorption of a particular IR wavelength, and thus make the top layer polarization sensitive to the particular IR wavelength.
摘要:
Embodiments of the invention are directed to integrated resonance detectors and arrays of integrated resonance detectors and to methods for making and using the integrated resonance detectors and arrays. Integrated resonance detectors comprise a substrate, a conducting mirror layer, an active layer, and a patterned conducting layer. Electromagnetic radiation is detected by transducing a specific resonance-induced field enhancement in the active layer to a detection current that is proportional to the incident irradiance.
摘要:
Embodiments of the invention are directed to integrated resonance detectors and arrays of integrated resonance detectors and to methods for making and using the integrated resonance detectors and arrays. Integrated resonance detectors comprise a substrate, a conducting mirror layer, an active layer, and a patterned conducting layer. Electromagnetic radiation is detected by transducing a specific resonance-induced field enhancement in the active layer to a detection current that is proportional to the incident irradiance.
摘要:
A sensor includes a first electrode, a second electrode, a ferroelectric element that is disposed between the first electrode and the second electrode and that has a ferroelectric film formed of a ferroelectric substance, and a detector configured to read an electric charge generated in the ferroelectric element. The detector performs reading by applying a first voltage for aligning polarization directions of the ferroelectric film and a second voltage for reversing polarization of at least part of the ferroelectric film whose polarization directions have been aligned.
摘要:
An apparatus, system, and method are disclosed for a frequency selective electromagnetic detector. In particular, the frequency selective electromagnetic detector includes a nanowire array constructed from a plurality of nanowires of different compositions. At least one nanoparticle-sized diameter thermoelectric junction is formed between the nanowires of different compositions. When a nanoparticle-sized diameter thermoelectric junction senses a photon, the nanoparticle-sized diameter thermoelectric junction emits an electrical pulse voltage that is proportional to an energy level of the sensed photon. In one or more embodiments, the frequency selective electromagnetic detector is a frequency selective optical detector that is used to sense photons having optical frequencies. In at least one embodiment, at least one of the nanowires in the nanowire array is manufactured from a compound material including Bismuth (Bi) and Tellurium (Te).
摘要:
A light detector is disclosed for measuring the temperature of an object. The light detector includes a lens assembly for accepting light emitted from the object, an aperture, and a mirror for reflecting the infrared energy of the object into a fiber optic cable. The fiber optic cable is connected to a depolarizing element to which pressure is externally applied. The depolarization element relays the infrared energy into a detection portion and a signal processing portion for calculating temperature. Before the infrared light enters the fiber optic cable, a chopper, controlled by a driving circuit, chops the infrared energy reflected by the mirror.
摘要:
Method and apparatus for accurately and instantaneously determining the thermodynamic temperature of remote objects by continuous determination of the emissivity, the reflectivity, and optical constants, as well as the apparent or brightness temperature of the sample with a single instrument. The emissivity measurement is preferably made by a complex polarimeter including a laser that generates polarized light, which is reflected from the sample into a detector system. The detector system includes a beamsplitter, polarization analyzers, and four detectors to measure independently the four Stokes vectors of the reflected radiation. The same detectors, or a separate detector in the same instrument, is used to measure brightness temperature. Thus, the instrument is capable of measuring both the change in polarization upon reflection as well as the degree of depolarization and hence diffuseness. This enables correction for surface roughness of the sample and background radiation, which could otherwise introduce errors in temperature measurement.
摘要:
This relates to sensor systems, detectors, imagers, and readout integrated circuits (ROICs) configured to selectively detect one or more frequencies or polarizations of light, capable of operating with a wide dynamic range, or any combination thereof. In some examples, the detector can include one or more light absorbers; the patterns and/or properties of a light absorber can be configured based on the desired measurement wavelength range and/or polarization direction. In some examples, the detector can comprise a plurality of at least partially overlapping light absorbers for enhanced dynamic range detection. In some examples, the detector can be capable of electrostatic tuning for one or more flux levels by varying the response time or sensitivity to account for various flux levels. In some examples, the ROIC can be capable of dynamically adjusting at least one of the frame rate integrating capacitance, and power of the illumination source.
摘要:
A self-contained metrology wafer carrier systems and methods of measuring one or more characteristics of semiconductor wafers are provided. A wafer carrier system includes, for instance, a housing configured for transport within the automated material handling system, the housing having a support configured to support a semiconductor wafer in the housing, and a metrology system disposed within the housing, the metrology system operable to measure at least one characteristic of the wafer, the metrology system comprising a sensing unit and a computing unit operably connected to the sensing unit. Also provided are methods of measuring one or more characteristics of a semiconductor wafer within the wafer carrier systems of the present disclosure.
摘要:
In a thermal infrared detector having trench structures, at least one sensor element is provided between the trench structures, an etching hole through which the sensor element is hollowed out and thereby thermally insulated is provided in a substrate rear surface or on the periphery of a pixel area, and an opening portion is provided below the pixel area.