MAINTENANCE-FREE STONE TILE, COATING AGENT THEREFOR, AND METHOD FOR PRODUCING THE TILE
    1.
    发明申请
    MAINTENANCE-FREE STONE TILE, COATING AGENT THEREFOR, AND METHOD FOR PRODUCING THE TILE 审中-公开
    无维护石头,其涂料代理商,以及生产瓷砖的方法

    公开(公告)号:US20160332920A1

    公开(公告)日:2016-11-17

    申请号:US15149848

    申请日:2016-05-09

    Inventor: Masaki WATANABE

    Abstract: A maintenance-free stone tile is provided in which a super hard coating film having a pencil hardness corresponding to 12H or more (preferably to 12 to 15H) is used to produce a finish having a deep material feeling and a high quality, and glossiness of 80 or more, and be further able of keeping the coating layer good in water resistance, antifouling property, slipperiness, adhesiveness and no crack, over a long term, on a surface of a stone tile, such as a marble, artificial stone, terrazzo or ceramic tile. The tile is a stone tile having an inorganic coating layer causing a surface of the stone to have a pencil hardness of 12H or more and a mirror surface glossiness of 80 or more.

    Abstract translation: 提供一种免维护的石瓦,其中使用具有对应于12H以上(优选为12〜15H)的铅笔硬度的超硬涂膜来制造具有深物料感和高质量的光洁度,并且光泽度 80以上,并且能够在大理石,人造石,水磨石等石瓦表面上进一步保持涂层在长时间上具有良好的耐水性,防污性,滑爽性,粘合性和无裂纹性 或瓷砖。 瓷砖是具有使石材表面的铅笔硬度为12H以上,镜面光泽度为80以上的无机涂层的石瓦。

    Method for manufacturing Si-SiC member for semiconductor heat treatment
    6.
    发明授权
    Method for manufacturing Si-SiC member for semiconductor heat treatment 失效
    用于半导体热处理的Si-SiC构件的制造方法

    公开(公告)号:US06699401B1

    公开(公告)日:2004-03-02

    申请号:US09958911

    申请日:2001-10-15

    Abstract: A method for producing a Si—SiC member for heat treatment of semiconductor, which is suitable for heat treatment of a semiconductor wafer with a large diameter and capable of reducing the contamination of the semiconductor wafer as much as possible is provided. Further, a method for producing a Si—SiC member for heat treatment of semiconductor capable of reducing the contamination of the semiconductor wafer as much as possible and causing no slip is provided. This method comprises the first step of kneading a SiC powder having a total metal impurity quantity of 0.2 ppm or less with a molding assistant; the second step of forming a compact from the kneaded raw material; the third step of calcining the compact; the fourth step of purifying the calcined body; and the fifth step of impregnating the purified body with silicon within a sealed vessel provided in a heating furnace body.

    Abstract translation: 提供一种用于制造半导体热处理用Si-SiC部件的方法,该方法适用于对具有大直径的半导体晶片进行热处理并能够尽可能减少半导体晶片的污染。 此外,提供了一种用于制造能够尽可能减少半导体晶片的污染的半导体的用于热处理的Si-SiC构件的方法,并且不会发生滑动。该方法包括:将具有总计 金属杂质量为0.2ppm以下的成型助剂; 从捏合的原料形成压块的第二步骤; 煅烧小块的第三步; 纯化煅烧体的第四步骤; 以及在设置在加热炉体内的密封容器内用硅浸渍净化体的第五工序。

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