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公开(公告)号：US20170166449A1
公开(公告)日：2017-06-15
申请号：US15039655
申请日：2014-12-24
Applicant: LG Chem, Ltd.
Inventor： Kwang Hyun Yoo , Kwon Nam Sohn , Won Jong Kwon , Kil Sun Lee
IPC: C01B31/04
CPC classification number: C01B32/184 , C01B32/19 , C01B32/194 , C01B2204/00 , C01P2002/82 , C01P2002/85 , C01P2002/86 , C01P2002/89 , C01P2004/03 , C01P2004/04 , C01P2004/24
Abstract: Disclosed herein is a preparation method of graphene, capable of preparing graphene having a smaller thickness and a large area, and with reduced defect generation, by a simplified process. The preparation method of graphene includes forming dispersion including a carbon-based material including unoxidized graphite, and a dispersant; and continuously passing the dispersion through a high pressure homogenizer including an inlet, an outlet, and a micro-channel for connection between the inlet and the outlet, having a diameter in a micrometer scale, wherein the carbon-based material is exfoliated, as the material is passed through the micro-channel under application of a shear force, thereby forming graphene having a thickness in nanoscale.
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2.发明授权公开(公告)号：US09306099B2
公开(公告)日：2016-04-05
申请号：US12956964
申请日：2010-11-30
Applicant: Jae-young Choi , Won-mook Choi , Duk-hyun Choi , Sang-woo Kim , Kyung-sik Shin
Inventor： Jae-young Choi , Won-mook Choi , Duk-hyun Choi , Sang-woo Kim , Kyung-sik Shin
IPC: B32B9/00 , H01L31/0352 , C01B31/04 , H01L31/036 , H01L31/0392
CPC classification number: H01L31/035227 , C01B32/182 , C01B2204/00 , H01L31/036 , Y10T428/30
Abstract: A material including: graphene; and an inorganic material having a crystal system, wherein a crystal plane of the inorganic material is oriented parallel to the (0001) plane of the graphene. The crystal plane of the inorganic material has an atomic arrangement of a hexagon, a tetragon, or a pentagon.
Abstract translation: 一种材料包括：石墨烯; 和具有晶体系的无机材料，其中无机材料的晶面平行于石墨烯的（0001）面取向。 无机材料的晶面具有六边形，四边形或五边形的原子排列。
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3.发明申请Carbon Nanotube-Graphene Hybrid Transparent Conductor and Field Effect Transistor 审中-公开碳纳米管 - 石墨烯混合透明导体和场效应晶体管公开(公告)号：US20150348667A1
公开(公告)日：2015-12-03
申请号：US14820039
申请日：2015-08-06
Inventor： Ageeth A. Bol , Bhupesh Chandra , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , George S. Tulevski
IPC: H01B1/04
CPC classification number: H01L51/0048 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/158 , C01B32/182 , C01B32/186 , C01B32/192 , C01B2202/00 , C01B2204/00 , C23C16/26 , H01B1/04 , H01L29/0673 , H01L29/1606 , H01L29/66742 , H01L29/778 , H01L29/78618 , H01L29/78684 , H01L29/78696 , H01L51/0025 , H01L51/0545 , H01L51/0562 , H01L51/0566 , H01L51/102 , H01L51/105 , Y10S977/742 , Y10S977/75 , Y10S977/938 , Y10T428/30
Abstract: A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. The nanotube-graphene hybrid film includes a substrate; nanotube film deposited over the substrate to produce a layer of nanotube film; and graphene deposited over the layer of nanotube film to produce a nanotube-graphene hybrid film.
Abstract translation: 一种纳米管 - 石墨烯复合膜及其形成清洁的纳米管 - 石墨烯混合膜的方法。 纳米管 - 石墨烯混合膜包括基板; 纳米管膜沉积在衬底上以产生一层纳米管膜; 和石墨烯沉积在纳米管膜的层上以产生纳米管 - 石墨烯混合膜。
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公开(公告)号：US09082523B2
公开(公告)日：2015-07-14
申请号：US13882451
申请日：2011-11-10
Applicant: Barbaros Özyilmaz , Guang Xin Ni , Yi Zheng
Inventor： Barbaros Özyilmaz , Guang Xin Ni , Yi Zheng
CPC classification number: H01B1/04 , C01B32/182 , C01B2204/00 , H01B13/0033 , H01L51/442 , H01L51/5206 , H01L51/5215 , Y02E10/549 , Y10T428/2911 , Y10T428/30
Abstract: A transparent conductor comprising: a graphene layer and a permanent dipole layer on the graphene layer configured to electrostatically dope the graphene layer.
Abstract translation: 一种透明导体，包括：石墨烯层和石墨烯层上的永久偶极子层，被配置为静电掺杂石墨烯层。
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5.发明申请公开(公告)号：US20110129675A1
公开(公告)日：2011-06-02
申请号：US12956964
申请日：2010-11-30
Applicant: Jae-young CHOI , Won-mook CHOI , Duk-hyun CHOI , Sang-woo KIM , Kyung-sik SHIN
Inventor： Jae-young CHOI , Won-mook CHOI , Duk-hyun CHOI , Sang-woo KIM , Kyung-sik SHIN
CPC classification number: H01L31/035227 , C01B32/182 , C01B2204/00 , H01L31/036 , Y10T428/30
Abstract: A material including: graphene; and an inorganic material having a crystal system, wherein a crystal plane of the inorganic material is oriented parallel to the (0001) plane of the graphene. The crystal plane of the inorganic material has an atomic arrangement of a hexagon, a tetragon, or a pentagon.
Abstract translation: 材料包括：石墨烯; 和具有晶体系的无机材料，其中无机材料的晶面平行于石墨烯的（0001）面取向。 无机材料的晶面具有六边形，四边形或五边形的原子排列。
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Patent Agency Ranking
公开(公告)号：US09950930B2
公开(公告)日：2018-04-24
申请号：US15039655
申请日：2014-12-24
Applicant: LG Chem, Ltd.
Inventor： Kwang Hyun Yoo , Kwon Nam Sohn , Won Jong Kwon , Kil Sun Lee
IPC: C01B31/04 , C01B32/184 , C01B32/19 , C01B32/194
CPC classification number: C01B32/184 , C01B32/19 , C01B32/194 , C01B2204/00 , C01P2002/82 , C01P2002/85 , C01P2002/86 , C01P2002/89 , C01P2004/03 , C01P2004/04 , C01P2004/24
Abstract: Disclosed herein is a preparation method of graphene, capable of preparing graphene having a smaller thickness and a large area, and with reduced defect generation, by a simplified process. The preparation method of graphene includes forming dispersion including a carbon-based material including unoxidized graphite, and a dispersant; and continuously passing the dispersion through a high pressure homogenizer including an inlet, an outlet, and a micro-channel for connection between the inlet and the outlet, having a diameter in a micrometer scale, wherein the carbon-based material is exfoliated, as the material is passed through the micro-channel under application of a shear force, thereby forming graphene having a thickness in nanoscale.
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7.发明授权Carbon nanotube-graphene hybrid transparent conductor and field effect transistor 有权碳纳米管 - 石墨烯混合透明导体和场效应晶体管公开(公告)号：US09177688B2
公开(公告)日：2015-11-03
申请号：US13301943
申请日：2011-11-22
Applicant: Ageeth A. Bol , Bhupesh Chandra , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , George S. Tulevski
Inventor： Ageeth A. Bol , Bhupesh Chandra , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , George S. Tulevski
IPC: B32B9/00 , H01B1/04 , C01B31/02 , C01B31/04 , C23C16/26 , H01L51/10 , H01L29/16 , H01L29/778 , H01L29/66 , H01L29/786 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L51/00 , H01L51/05 , H01L29/06
CPC classification number: H01L51/0048 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/158 , C01B32/182 , C01B32/186 , C01B32/192 , C01B2202/00 , C01B2204/00 , C23C16/26 , H01B1/04 , H01L29/0673 , H01L29/1606 , H01L29/66742 , H01L29/778 , H01L29/78618 , H01L29/78684 , H01L29/78696 , H01L51/0025 , H01L51/0545 , H01L51/0562 , H01L51/0566 , H01L51/102 , H01L51/105 , Y10S977/742 , Y10S977/75 , Y10S977/938 , Y10T428/30
Abstract: A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. The method includes depositing nanotube film over a substrate to produce a layer of nanotube film, removing impurities from a surface of the layer of nanotube film not contacting the substrate to produce a cleaned layer of nanotube film, depositing a layer of graphene over the cleaned layer of nanotube film to produce a nanotube-graphene hybrid film, and removing impurities from a surface of the nanotube-graphene hybrid film to produce a cleaned nanotube-graphene hybrid film, wherein the hybrid film has improved electrical performance. Another method includes depositing nanotube film over a metal foil to produce a layer of nanotube film, placing the metal foil with as-deposited nanotube film in a chemical vapor deposition furnace to grow graphene on the nanotube film to form a nanotube-graphene hybrid film, and transferring the nanotube-graphene hybrid film over a substrate.
Abstract translation: 一种纳米管 - 石墨烯复合膜及其形成清洁的纳米管 - 石墨烯混合膜的方法。 该方法包括在衬底上沉积纳米管膜以产生纳米管膜层，从不接触衬底的纳米管膜的表面去除杂质以产生清洁的纳米管膜层，在清洁层上沉积一层石墨烯 的纳米管膜以制造纳米管 - 石墨烯混合膜，并从纳米管 - 石墨烯混合膜的表面除去杂质，以制造清洁的纳米管 - 石墨烯混合膜，其中混合膜具有改善的电性能。 另一种方法包括在金属箔上沉积纳米管膜以产生纳米管膜层，将具有沉积纳米管膜的金属箔放置在化学气相沉积炉中以在纳米管膜上生长石墨烯以形成纳米管 - 石墨烯混合膜， 并将纳米管 - 石墨烯混合膜转移到衬底上。
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8.发明申请Carbon Nanotube-Graphene Hybrid Transparent Conductor and Field Effect Transistor 有权碳纳米管 - 石墨烯混合透明导体和场效应晶体管公开(公告)号：US20130130037A1
公开(公告)日：2013-05-23
申请号：US13301943
申请日：2011-11-22
Applicant: Ageeth A. Bol , Bhupesh Chandra , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , George S. Tulevski
Inventor： Ageeth A. Bol , Bhupesh Chandra , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , George S. Tulevski
CPC classification number: H01L51/0048 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/158 , C01B32/182 , C01B32/186 , C01B32/192 , C01B2202/00 , C01B2204/00 , C23C16/26 , H01B1/04 , H01L29/0673 , H01L29/1606 , H01L29/66742 , H01L29/778 , H01L29/78618 , H01L29/78684 , H01L29/78696 , H01L51/0025 , H01L51/0545 , H01L51/0562 , H01L51/0566 , H01L51/102 , H01L51/105 , Y10S977/742 , Y10S977/75 , Y10S977/938 , Y10T428/30
Abstract: A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. The method includes depositing nanotube film over a substrate to produce a layer of nanotube film, removing impurities from a surface of the layer of nanotube film not contacting the substrate to produce a cleaned layer of nanotube film, depositing a layer of graphene over the cleaned layer of nanotube film to produce a nanotube-graphene hybrid film, and removing impurities from a surface of the nanotube-graphene hybrid film to produce a cleaned nanotube-graphene hybrid film, wherein the hybrid film has improved electrical performance. Another method includes depositing nanotube film over a metal foil to produce a layer of nanotube film, placing the metal foil with as-deposited nanotube film in a chemical vapor deposition furnace to grow graphene on the nanotube film to form a nanotube-graphene hybrid film, and transferring the nanotube-graphene hybrid film over a substrate.
Abstract translation: 一种纳米管 - 石墨烯复合膜及其形成清洁的纳米管 - 石墨烯混合膜的方法。 该方法包括在衬底上沉积纳米管膜以产生纳米管膜层，从不接触衬底的纳米管膜的表面去除杂质以产生清洁的纳米管膜层，在清洁层上沉积一层石墨烯 的纳米管膜以制造纳米管 - 石墨烯混合膜，并从纳米管 - 石墨烯混合膜的表面除去杂质，以制造清洁的纳米管 - 石墨烯混合膜，其中混合膜具有改善的电性能。 另一种方法包括在金属箔上沉积纳米管膜以产生纳米管膜层，将具有沉积纳米管膜的金属箔放置在化学气相沉积炉中以在纳米管膜上生长石墨烯以形成纳米管 - 石墨烯混合膜， 并将纳米管 - 石墨烯混合膜转移到衬底上。
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公开(公告)号：US20120021249A1
公开(公告)日：2012-01-26
申请号：US13167933
申请日：2011-06-24
Applicant: Hyeon-jin SHIN , Jae-Young CHOI , Gang-hee HAN , Young-hee LEE
Inventor： Hyeon-jin SHIN , Jae-Young CHOI , Gang-hee HAN , Young-hee LEE
CPC classification number: B82Y40/00 , B82Y30/00 , C01B32/182 , C01B32/186 , C01B32/194 , C01B2204/00 , C01B2204/02 , C01B2204/04 , H01L29/1606 , Y10T428/30
Abstract: A method of controlling the number of layers of graphene layers includes forming graphene on a first surface of a first substrate, and forming a second substrate on a second surface of the first substrate; and irradiating the graphene with light to cause constructive Fresnel interference, wherein a multilayer structure or non-uniform graphene structure formed on the a surface of the graphene is removed by the constructive Fresnel interference.
Abstract translation: 控制石墨烯层的层数的方法包括在第一基板的第一表面上形成石墨烯，以及在第一基板的第二表面上形成第二基板; 并用光照射石墨烯以引起构成性的菲涅尔干涉，其中通过构造菲涅尔干涉除去在石墨烯的表面上形成的多层结构或不均匀的石墨烯结构。
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公开(公告)号：US20190248655A1
公开(公告)日：2019-08-15
申请号：US15727574
申请日：2017-10-07
Applicant: Dakota Zachariah Ferry
Inventor： Dakota Zachariah Ferry
IPC: C01B32/184
CPC classification number: C01B32/184 , C01B2204/00 , C01P2002/82 , C01P2004/03 , C01P2004/20
Abstract: This invention pertains to the production of the bi-dimensional crystalline structure of carbon known as graphene. The purpose of this invention is to provide an aqueous, organic method for producing the atomic-scale substance. The invention is declared to enable the low-cost scalable production of large quantities of graphene.
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