公开(公告)号：US09082523B2

公开(公告)日：2015-07-14

申请号：US13882451

申请日：2011-11-10

申请人： Barbaros Özyilmaz ,  Guang Xin Ni ,  Yi Zheng

发明人： Barbaros Özyilmaz ,  Guang Xin Ni ,  Yi Zheng

IPC分类号： B32B9/00 ,  H01B1/04 ,  C01B31/04 ,  H01L51/44 ,  H01B13/00 ,  H01L51/52

CPC分类号： H01B1/04 ,  C01B32/182 ,  C01B2204/00 ,  H01B13/0033 ,  H01L51/442 ,  H01L51/5206 ,  H01L51/5215 ,  Y02E10/549 ,  Y10T428/2911 ,  Y10T428/30

摘要： A transparent conductor comprising: a graphene layer and a permanent dipole layer on the graphene layer configured to electrostatically dope the graphene layer.

摘要翻译： 一种透明导体，包括：石墨烯层和石墨烯层上的永久偶极子层，被配置为静电掺杂石墨烯层。

公开(公告)号：US06980469B2

公开(公告)日：2005-12-27

申请号：US10643762

申请日：2003-08-19

申请人： Andrew Kent ,  Enrique Gonzalez Garcia ,  Barbaros Özyilmaz

发明人： Andrew Kent ,  Enrique Gonzalez Garcia ,  Barbaros Özyilmaz

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01L43/08 ,  G11C11/14

CPC分类号： H01F10/325 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  H01F10/123 ,  H01F10/3286 ,  H01L29/82 ,  H01L43/08

摘要： The present invention generally relates to the field of magnetic devices for memory cells that can serve as non-volatile memory. More specifically, the present invention describes a high speed and low power method by which a spin polarized electrical current can be used to control and switch the magnetization direction of a magnetic region in such a device. The magnetic device comprises a pinned magnetic layer with a fixed magnetization direction, a free magnetic layer with a free magnetization direction, and a read-out magnetic layer with a fixed magnetization direction. The pinned magnetic layer and the free magnetic layer are separated by a non-magnetic layer, and the free magnetic layer and the read-out magnetic layer are separated by another non-magnetic layer. The magnetization directions of the pinned and free layers generally do not point along the same axis. The non-magnetic layers minimize the magnetic interaction between the magnetic layers. A current is applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to thereby read out the information stored in the device.

公开(公告)号：US20140193626A1

公开(公告)日：2014-07-10

申请号：US13882451

申请日：2011-11-10

申请人： Barbaros Özyilmaz ,  Guang Xin Ni ,  Yi Zheng

发明人： Barbaros Özyilmaz ,  Guang Xin Ni ,  Yi Zheng

IPC分类号： H01B1/04 ,  H01B13/00

CPC分类号： H01B1/04 ,  C01B32/182 ,  C01B2204/00 ,  H01B13/0033 ,  H01L51/442 ,  H01L51/5206 ,  H01L51/5215 ,  Y02E10/549 ,  Y10T428/2911 ,  Y10T428/30

摘要： A transparent conductor comprising: a graphene layer and a permanent dipole layer on the graphene layer configured to electrostatically dope the graphene layer.

摘要翻译： 一种透明导体，包括：石墨烯层和石墨烯层上的永久偶极子层，被配置为静电掺杂石墨烯层。

公开(公告)号：US07986544B2

公开(公告)日：2011-07-26

申请号：US11935392

申请日：2007-11-05

申请人： Andrew Kent ,  Barbaros Özyilmaz

发明人： Andrew Kent ,  Barbaros Özyilmaz

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F1/404 ,  H01F10/193

摘要： The present invention generally relates to magnetic devices used in memory and information processing applications, such as giant magneto-resistance (GMR) devices and tunneling magneto-resistance devices. More specifically, the present invention is directed to a single ferromagnetic layer device in which an electrical current is used to control and change magnetic configurations as well as induce high frequency magnetization dynamics. The magnetic layer includes full spin-polarized magnetic material, which may also have non-uniform magnetization. The non-uniform magnetization is achieved by varying the shape or roughness of the magnetic material. The present invention may be used in memory cells, as well as high frequency electronics, such as compact microwave sources, detectors, mixers and phase shifters.

摘要翻译： 本发明一般涉及在存储器和信息处理应用中使用的磁性器件，例如巨磁阻（GMR）器件和隧道磁阻器件。 更具体地，本发明涉及单个铁磁层器件，其中使用电流来控制和改变磁性结构以及引起高频磁化动力学。 磁性层包括全自旋极化磁性材料，其也可能具有不均匀的磁化强度。 通过改变磁性材料的形状或粗糙度来实现非均匀磁化。 本发明可以用于存储器单元以及高频电子器件，例如紧凑的微波源，检测器，混频器和移相器。