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    MEMS acoustic sensor comprising a non-perimeter flexible member
    2.
    发明授权
    MEMS acoustic sensor comprising a non-perimeter flexible member 有权

    公开(公告)号：US09718671B2

    公开(公告)日：2017-08-01

    申请号：US14642693

    申请日：2015-03-09

    Applicant: INVENSENSE, INC.

    Inventor： Sushil Bharatan ,  Baris Cagdaser

    IPC: G01L9/00 ,  B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/007 ,  B81B2203/0127 ,  B81B2203/0163 ,  B81C1/00658 ,  G01L9/003 ,  G01L9/0072 ,  G01L9/0095

    Abstract: A micro electro-mechanical system (MEMS) acoustic sensor is disclosed. The acoustic sensor comprises a backplate and a diaphragm. The acoustic sensor further comprises a flexible member and optional spacer member disposed between the backplate and the diaphragm resulting in a gap between the backplate and the diaphragm. The gap can vary in response to impinging pressure on the diaphragm based on the design of the flexible member and resulting in a variable capacitance between the backplate and the diaphragm. The change in the gap can result in a change in an electrical characteristic associated with the variable capacitance and can be converted to an electrical output signal corresponding to the impinging pressure on the diaphragm. The flexible member can be part of the backplate or diaphragm.

    Scalable self-supported MEMS structure and related method
    3.
    发明授权
    Scalable self-supported MEMS structure and related method 有权
    可扩展自支撑MEMS结构及相关方法

    公开(公告)号：US09458011B2

    公开(公告)日：2016-10-04

    申请号：US14719087

    申请日：2015-05-21

    Applicant: Newport Fab, LLC

    Inventor： David J. Howard ,  Michael J. DeBar ,  Jeff Rose ,  Arjun Kar-Roy

    IPC: H01L21/4763 ,  B81C1/00 ,  B81B3/00 ,  H01L29/417 ,  H01L21/768

    CPC classification number: B81C1/00111 ,  B81B3/007 ,  B81B2203/0307 ,  B81C1/00166 ,  B81C1/00658 ,  H01L21/47635 ,  H01L21/76883 ,  H01L29/417

    Abstract: Self-supported MEMS structure and method for its formation are disclosed. An exemplary method includes forming a polymer layer over a MEMS plate over a substrate, forming a trench over the MEMS plate, forming an oxide liner in the trench on sidewalls of the trench, forming a metal liner over the oxide liner in the trench, and depositing a metallic filler in the trench to form a via. The method further includes removing the polymer layer such that the via and the MEMS plate form the self-supported MEMS structure, where the oxide liner provides mechanical rigidity for the metallic filler of the via. An exemplary structure formed by the disclosed method is also disclosed.

    Abstract translation: 公开了自支撑MEMS结构及其形成方法。 示例性方法包括在衬底上方的MEMS板上形成聚合物层，在MEMS板上形成沟槽，在沟槽的侧壁上形成沟槽中的氧化物衬垫，在沟槽中的氧化物衬垫上形成金属衬垫，以及 在沟槽中沉积金属填料以形成通孔。 该方法还包括去除聚合物层，使得通孔和MEMS板形成自支撑的MEMS结构，其中氧化物衬垫为通孔的金属填料提供机械刚性。 还公开了通过公开的方法形成的示例性结构。

    Scalable Self-Supported MEMS Structure and Related Method
    4.
    发明申请
    Scalable Self-Supported MEMS Structure and Related Method 有权
    可扩展自支持MEMS结构及相关方法

    公开(公告)号：US20150368092A1

    公开(公告)日：2015-12-24

    申请号：US14719087

    申请日：2015-05-21

    Applicant: Newport Fab, LLC dba Jazz Semiconductor

    Inventor： David J. Howard ,  Michael J. DeBar ,  Jeff Rose ,  Arjun Kar-Roy

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81C1/00111 ,  B81B3/007 ,  B81B2203/0307 ,  B81C1/00166 ,  B81C1/00658 ,  H01L21/47635 ,  H01L21/76883 ,  H01L29/417

    Abstract: Self-supported MEMS structure and method for its formation are disclosed. An exemplary method includes forming a polymer layer over a MEMS plate over a substrate, forming a trench over the MEMS plate, forming an oxide liner in the trench on sidewalls of the trench, forming a metal liner over the oxide liner in the trench, and depositing a metallic filler in the trench to form a via. The method further includes removing the polymer layer such that the via and the MEMS plate form the self-supported MEMS structure, where the oxide liner provides mechanical rigidity for the metallic filler of the via. An exemplary structure formed by the disclosed method is also disclosed.

    Abstract translation: 公开了自支撑MEMS结构及其形成方法。 示例性方法包括在衬底上方的MEMS板上形成聚合物层，在MEMS板上形成沟槽，在沟槽的侧壁上形成沟槽中的氧化物衬垫，在沟槽中的氧化物衬垫上形成金属衬垫，以及 在沟槽中沉积金属填料以形成通孔。 该方法还包括去除聚合物层，使得通孔和MEMS板形成自支撑的MEMS结构，其中氧化物衬垫为通孔的金属填料提供机械刚性。 还公开了通过公开的方法形成的示例性结构。

    MEMS DEVICE WITH DIFFERENTIAL VERTICAL SENSE ELECTRODES
    5.
    发明申请
    MEMS DEVICE WITH DIFFERENTIAL VERTICAL SENSE ELECTRODES 有权
    具有差分垂直感应电极的MEMS器件

    公开(公告)号：US20150041927A1

    公开(公告)日：2015-02-12

    申请号：US13960032

    申请日：2013-08-06

    Applicant: FREESCALE SEMICONDUCTOR, INC.

    Inventor： Aaron A. Geisberger ,  Margaret L. Kniffin

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81C1/00658 ,  B81B3/0027 ,  B81B3/0078 ,  B81B2201/025 ,  B81C1/0015 ,  G01C19/574 ,  G01P15/125 ,  G01P2015/0831 ,  H01L21/76 ,  H01L41/113 ,  H01L41/1136

    Abstract: A MEMS device includes a first sense electrode and a first portion of a sense mass formed in a first structural layer, where the first sense electrode is fixedly coupled with the substrate and the first portion of the sense mass is suspended over the substrate. The MEMS device further includes a second sense electrode and a second portion of the sense mass formed in a second structural layer. The second sense electrode is spaced apart from the first portion of the sense mass in a direction perpendicular to a surface of the substrate, and the second portion of the sense mass is spaced apart from the first sense electrode in the same direction. A junction is formed between the first and second portions of the sense mass so that they are coupled together and move concurrently in response to an imposed force.

    Abstract translation: MEMS器件包括第一感测电极和形成在第一结构层中的感测质量的第一部分，其中第一感测电极与衬底固定耦合，并且感测质量块的第一部分悬挂在衬底上。 MEMS器件还包括形成在第二结构层中的第二感测电极和感测质量的第二部分。 第二感测电极在垂直于衬底的表面的方向上与感测质量块的第一部分间隔开，并且感测质量块的第二部分在相同方向上与第一感测电极间隔开。 在感测体的第一和第二部分之间形成接合点，使得它们耦合在一起并且响应于施加的力同时移动。

    Method of manufacturing rigid floating microstructure elements and a device equipped with such elements
    7.
    发明授权
    Method of manufacturing rigid floating microstructure elements and a device equipped with such elements 失效
    制造刚性浮动微结构元件的方法和装备有这些元件的装置

    公开(公告)号：US5930594A

    公开(公告)日：1999-07-27

    申请号：US676631

    申请日：1996-07-10

    Applicant: Michel Vilain

    Inventor： Michel Vilain

    IPC: G01J5/20 ,  B81B3/00 ,  F15C5/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L49/00 ,  H01L21/00

    CPC classification number: B81C1/00658 ,  B81B3/007 ,  F15C5/00 ,  G01J5/20 ,  B81B2203/0118 ,  B81C2201/0109 ,  B81C2201/038

    Abstract: A method of manufacturing elements of floating rigid microstructures and a device equipped with such elements.This method of manufacturing at least one element of a microstructure (104, 116) in a substrate including a stacking of a support layer (100), a layer (102) of sacrificial material and a structure layer (104) comprises the following steps:a) etching in the substrate a relief structure (108) with lateral sides (110a, 110b)b) formation of a so-called rigidity lining (116) on the lateral sides (110a, 110b),c) removal of the sacrificial material from the relief structure (108) in order to release the floating microstructure.

    Abstract translation: 一种制造浮动刚性微结构元件的方法和装备有这些元件的装置。 制造包括支撑层（100），牺牲材料层（102）和结构层（104）的堆叠的衬底中的微结构（104,116）的至少一个元件的这种方法包括以下步骤： a）在衬底中蚀刻具有侧面（110a，110b）的凸版结构（108）b）在侧面（110a，110b）上形成所谓的刚性衬层（116），c）去除牺牲材料 从浮雕结构（108）释放浮动微结构。

    MEMS sensor and method for manufacturing a MEMS sensor including improved time reliable reinforcement structure
    8.
    发明授权
    MEMS sensor and method for manufacturing a MEMS sensor including improved time reliable reinforcement structure 有权

    公开(公告)号：US11828669B2

    公开(公告)日：2023-11-28

    申请号：US17284633

    申请日：2020-01-24

    Applicant: Robert Bosch GmbH

    Inventor： Cristian Nagel

    IPC: G01L9/00 ,  B81B3/00 ,  B81C1/00

    CPC classification number: G01L9/0072 ,  B81B3/007 ,  B81C1/00658 ,  G01L9/0048 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/04

    Abstract: A MEMS sensor, including a substrate, and at least three functional layers, which are connected to the substrate on top of one another and spaced apart from one another. A first of the at least three functional layers is deflectably situated. A first electrode, which includes at least two areas being situated at the first functional layer. A first area of the first electrode together with a second electrode of a second of the at least three functional layers form a first capacitance, and a second area of the first electrode together with at least one area of a third electrode of a third functional layer form a second capacitance. The electrodes are situated in such a way that, upon a change in the distance of the electrodes of the first capacitance, a contrary change in the distance of the electrodes of the second capacitance takes place. In this way a micromechanical sensor including capacitive evaluation as a differential capacitor is made possible, so that an output signal of the MEMS sensor may be provided across the entire measurement range in a manner that is linearly dependent on the deflection.

    SYSTEM AND METHOD FOR A MEMS TRANSDUCER
    10.
    发明申请
    SYSTEM AND METHOD FOR A MEMS TRANSDUCER 有权
    一种用于MEMS传感器的系统和方法

    公开(公告)号：US20160340173A1

    公开(公告)日：2016-11-24

    申请号：US14717556

    申请日：2015-05-20

    Applicant: Infineon Technologies AG

    Inventor： Wolfgang Klein ,  Martin Wurzer ,  Stefan Barzen ,  Alfons Dehe

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/007 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81B2203/0353 ,  B81C1/00658 ,  H04R19/005 ,  H04R19/04 ,  H04R31/006 ,  H04R2201/003

    Abstract: According to an embodiment, a microelectromechanical systems (MEMS) transducer includes a first electrode, a second electrode fixed to an anchor at a perimeter of the second electrode, and a mechanical support separate from the anchor at the perimeter of the second electrode and mechanically connected to the first electrode and the second electrode. The mechanical support is fixed to a portion of the second electrode such that, during operation, a maximum deflection of the second electrode occurs between the mechanical structure and the perimeter of the second electrode.

    Abstract translation: 根据实施例，微机电系统（MEMS）换能器包括第一电极，固定到第二电极的周边处的锚固件的第二电极以及与第二电极的周边处的锚固件分离的机械支撑件，并机械连接 到第一电极和第二电极。 机械支撑件固定到第二电极的一部分，使得在操作期间，第二电极的最大偏转发生在机械结构和第二电极的周边之间。

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