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公开(公告)号：US10370240B2
公开(公告)日：2019-08-06
申请号：US15646161
申请日：2017-07-11
Applicant: Infineon Technologies AG
Inventor： Matthias Koenig , Guenther Ruhl
Abstract: A layer structure may include a carrier, a two-dimensional layer, and a holding structure. The holding structure is arranged on the carrier and holds the two-dimensional layer on the carrier such that at least a portion of the two-dimensional layer is spaced apart from the carrier. The holding structure includes a holding portion extending from the two-dimensional layer towards the carrier beyond the at least a portion of the two-dimensional layer spaced apart from the carrier.
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2.发明申请公开(公告)号：US20190077671A1
公开(公告)日：2019-03-14
申请号：US16183192
申请日：2018-11-07
Applicant: Infineon Technologies AG
Inventor： Guenther Ruhl , Matthias Koenig
IPC: C01B32/194 , G01R33/07 , B81C1/00 , H04R19/01
CPC classification number: C01B32/194 , B81B2201/0292 , B81C1/00158 , B81C1/00658 , C01B2204/02 , C01B2204/22 , G01R33/07 , H04R19/016
Abstract: A process for the formation of a graphene membrane component includes arranging a graphene membrane in a relaxed condition of the graphene membrane on a surface of a supportive substrate. The graphene membrane extends across a cut-out with an opening at the surface of the supportive substrate. The graphene membrane is moreover arranged so that a first portion of the graphene membrane is arranged on the surface of the supportive substrate and a second portion of the graphene membrane is arranged over the opening of the cut-out. The process further includes tensioning of the second portion of the graphene membrane, in order to convert the second portion of the graphene membrane to a tensioned condition, so that the second portion of the graphene membrane is permanently in the tensioned condition in an operating temperature range of the graphene membrane component.
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3.发明申请公开(公告)号：US20180292340A1
公开(公告)日：2018-10-11
申请号：US15948665
申请日：2018-04-09
Applicant: Infineon Technologies AG
Inventor： Matthias Koenig , Guenther Ruhl
IPC: G01N27/12
Abstract: A fluid sensor comprises a sensor material configured to come into contact at a surface region of same with a fluid and to obtain a first temporal change of a resistance value of the sensor material on the basis of the contact in a first sensor configuration and to obtain a second temporal change of the resistance value of the sensor material on the basis of the contact in a second sensor configuration. The fluid sensor comprises an output element configured to provide a sensor signal on the basis of the first and second temporal change of the resistance value.
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公开(公告)号：US09987830B2
公开(公告)日：2018-06-05
申请号：US14828557
申请日：2015-08-18
Applicant: Infineon Technologies AG
Inventor： Matthias Koenig , Guenther Ruhl
CPC classification number: B32B37/025 , B05D1/322 , B32B38/10 , B32B2307/202 , B32B2313/04 , B32B2457/00 , C01B32/194 , H01B1/04
Abstract: According to various embodiments, a method for processing a carrier may include: forming a layer structure over the carrier, the layer structure including a support layer and a two-dimensional layer over the support layer; wherein the layer structure has at least one opening that exposes a portion of the carrier; forming an auxiliary layer structure, wherein the auxiliary layer structure at least partially covers the layer structure and at least partially fills the at least one opening; and removing the support layer of the layer structure.
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公开(公告)号：US20180016132A1
公开(公告)日：2018-01-18
申请号：US15646161
申请日：2017-07-11
Applicant: Infineon Technologies AG
Inventor： Matthias Koenig , Guenther Ruhl
CPC classification number: B81B3/0072 , B81B2201/0257 , B81B2203/0127 , B81C1/00158 , B81C1/00476 , B81C2201/0109 , B81C2201/0187 , B81C2201/0197
Abstract: A layer structure may include a carrier, a two-dimensional layer, and a holding structure. The holding structure is arranged on the carrier and holds the two-dimensional layer on the carrier such that at least a portion of the two-dimensional layer is spaced apart from the carrier. The holding structure includes a holding portion extending from the two-dimensional layer towards the carrier beyond the at least a portion of the two-dimensional layer spaced apart from the carrier.
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Patent Agency Ranking
6.发明授权公开(公告)号：US11105760B2
公开(公告)日：2021-08-31
申请号：US15948665
申请日：2018-04-09
Applicant: Infineon Technologies AG
Inventor： Matthias Koenig , Guenther Ruhl
IPC: G01N27/12
Abstract: A fluid sensor comprises a sensor material configured to come into contact at a surface region of same with a fluid and to obtain a first temporal change of a resistance value of the sensor material on the basis of the contact in a first sensor configuration and to obtain a second temporal change of the resistance value of the sensor material on the basis of the contact in a second sensor configuration. The fluid sensor comprises an output element configured to provide a sensor signal on the basis of the first and second temporal change of the resistance value.
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公开(公告)号：US20180240887A1
公开(公告)日：2018-08-23
申请号：US15895427
申请日：2018-02-13
Applicant: Infineon Technologies AG
Inventor： Matthias Koenig , Marco Kraus , Guenther Ruhl
CPC classification number: H01L29/66045 , H01L27/092 , H01L27/1203 , H01L29/0642 , H01L29/10 , H01L29/1083 , H01L29/1606 , H01L29/402 , H01L29/408 , H01L29/66037 , H01L29/66977 , H01L29/735 , H01L29/7391 , H01L29/778 , H01L29/861
Abstract: A method for use in manufacturing an electronic component comprises forming a layered structure comprising a dielectric structure layer, a channel layer and a gate layer. The dielectric structure layer comprises a first portion and a second portion that differ from one another in respect of fixed charges. The channel layer comprises a two-dimensional material. The gate layer comprises a gate formed above both, the first portion of the dielectric structure layer and the second portion of the dielectric structure layer. A device for use as an electronic component comprises a dielectric structure and a gate above the dielectric structure and a two-dimensional material between the dielectric structure and the gate. The dielectric structure is configured to expose the two-dimensional material to an inhomogeneous electric field.
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公开(公告)号：US20170356869A1
公开(公告)日：2017-12-14
申请号：US15620868
申请日：2017-06-13
Applicant: Infineon Technologies AG
Inventor： Matthias Koenig , Florian Bachl , Alexander Zoepfl , Guenther Ruhl
CPC classification number: G01N27/121 , G01N27/123 , G01N27/125 , G01N27/127 , G01N33/0027
Abstract: Various embodiments relate to a gas sensor, including: a carrier, an electrode structure; and a sensor layer in contact with the electrode structure, wherein the sensor layer includes or essentially consists of turbostratic graphite.
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公开(公告)号：US10421665B2
公开(公告)日：2019-09-24
申请号：US16183192
申请日：2018-11-07
Applicant: Infineon Technologies AG
Inventor： Guenther Ruhl , Matthias Koenig
IPC: C01B32/194 , G01R33/07 , B81C1/00 , H04R19/01
Abstract: A process for the formation of a graphene membrane component includes arranging a graphene membrane in a relaxed condition of the graphene membrane on a surface of a supportive substrate. The graphene membrane extends across a cut-out with an opening at the surface of the supportive substrate. The graphene membrane is moreover arranged so that a first portion of the graphene membrane is arranged on the surface of the supportive substrate and a second portion of the graphene membrane is arranged over the opening of the cut-out. The process further includes tensioning of the second portion of the graphene membrane, in order to convert the second portion of the graphene membrane to a tensioned condition, so that the second portion of the graphene membrane is permanently in the tensioned condition in an operating temperature range of the graphene membrane component.
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公开(公告)号：US10150674B2
公开(公告)日：2018-12-11
申请号：US15872772
申请日：2018-01-16
Applicant: Infineon Technologies AG
Inventor： Guenther Ruhl , Matthias Koenig
IPC: C01B32/194 , B81C1/00 , G01R33/07 , H04R19/01
Abstract: A process for the formation of a graphene membrane component includes arranging a graphene membrane in a relaxed condition of the graphene membrane on a surface of a supportive substrate. The graphene membrane extends across a cut-out with an opening at the surface of the supportive substrate. The graphene membrane is moreover arranged so that a first portion of the graphene membrane is arranged on the surface of the supportive substrate and a second portion of the graphene membrane is arranged over the opening of the cut-out. The process further includes tensioning of the second portion of the graphene membrane, in order to convert the second portion of the graphene membrane to a tensioned condition, so that the second portion of the graphene membrane is permanently in the tensioned condition in an operating temperature range of the graphene membrane component.
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