公开(公告)号：US20220068914A1

公开(公告)日：2022-03-03

申请号：US17465246

申请日：2021-09-02

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Mantavya Sinha ,  Edward Preisler ,  David J. Howard

IPC: H01L27/06 ,  H01L29/732 ,  H01L29/45 ,  H01L21/324 ,  H01L21/8249

Abstract: A bipolar complementary-metal-oxide-semiconductor (BiCMOS) device includes a MOS transistor including CMOS nickel silicided regions in a CMOS region, and a bipolar transistor in a bipolar region. The bipolar transistor includes a nickel silicided emitter, a collector, and a base including an intrinsic base, a link base, and a nickel silicided extrinsic base. The intrinsic base is situated between the nickel silicided emitter and the collector. A dielectric spacer separates the link base from the nickel silicided emitter. The nickel silicided extrinsic base provides an electrical connection to the link base and the intrinsic base. A nickel silicided collector sinker provides an electrical connection to the collector. The CMOS nickel silicided regions, nickel silicided emitter, nickel silicided extrinsic base, and nickel silicided collector sinker can include an additive of molybdenum (Mo) and/or platinum (Pt). A low temperature rapid thermal anneal can be performed so as to prevent deactivation of dopants.

公开(公告)号：US20210111019A1

公开(公告)日：2021-04-15

申请号：US16597779

申请日：2019-10-09

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Paul D. Hurwitz ,  Edward Preisler ,  David J. Howard ,  Marco Racanelli

IPC: H01L21/02 ,  H01L29/04 ,  H01L29/08 ,  H01L21/762 ,  H01L23/66 ,  H03K17/687

Abstract: A semiconductor structure includes a substrate having a first dielectric constant, a porous semiconductor layer situated over the substrate, and a crystalline epitaxial layer situated over the porous semiconductor layer. A first semiconductor device is situated in the crystalline epitaxial layer. The porous semiconductor layer has a second dielectric constant that is substantially less than the first dielectric constant such that the porous semiconductor layer reduces signal leakage from the first semiconductor device. The semiconductor structure can include a second semiconductor device situated in the crystalline epitaxial layer, and an electrical isolation region separating the first and second semiconductor devices.

公开(公告)号：US20200287132A1

公开(公告)日：2020-09-10

申请号：US16883850

申请日：2020-05-26

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Gregory P. Slovin ,  Nabil El-Hinnawy ,  Jefferson E. Rose ,  David J. Howard

IPC: H01L45/00

Abstract: A radio frequency (RF) switch includes a phase-change material (PCM), a heating element underlying an active segment of the PCM and extending outward and transverse to the PCM, a capacitive RF terminal, and an ohmic RF terminal. The capacitive RF terminal can include a first trench metal liner situated on a first passive segment of the PCM, and a dielectric liner separating the first trench metal liner from a first trench metal plug. The ohmic RF terminal can include a second trench metal liner situated on a second passive segment of the PCM, and a second trench metal plug ohmically connected to the second trench metal liner. Alternatively, the capacitive RF terminal and the ohmic RF terminal can include lower metal portions and upper metal portions. A MIM capacitor can be formed by the upper metal portion of the capacitive RF terminal, an insulator, and a patterned top plate.

公开(公告)号：US20200136042A1

公开(公告)日：2020-04-30

申请号：US16731487

申请日：2019-12-31

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： David J. Howard ,  Jefferson E. Rose ,  Gregory P. Slovin ,  Nabil EI-Hinnawy ,  Michael J. DeBar

IPC: H01L45/00

Abstract: A radio frequency (RF) switch includes a phase-change material (PCM) and a heating element underlying an active segment of the PCM, the PCM and heating element being situated over a substrate. A contact dielectric is over the PCM. PCM contacts have upper portions and uniform plate slot lower portions. The uniform plate slot lower portions have a total plate resistance RPLATE, and a total plate slot interface resistance RPLATE-INT. The upper portions have a total capacitance CUPPER to the uniform plate slot lower portions, and the PCM has a total capacitance CPCM to the substrate. The uniform plate slot lower portions significantly reduce a product of (RPLATE+RPLATE-INT) and (CUPPER+CPCM). As an alternative to the uniform plate slot lower portions, PCM contacts have segmented lower portions. The segmented lower portions significantly reduce CUPPER.

公开(公告)号：US20200066695A1

公开(公告)日：2020-02-27

申请号：US16672240

申请日：2019-11-01

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Gregory P. Slovin ,  David J. Howard

IPC: H01L25/16 ,  H01L23/66 ,  H01L45/00 ,  H01L23/00

Abstract: In a method for wafer-to-wafer bonding, an integrated circuit (IC) wafer and a phase-change material (PCM) switch wafer are provided. The IC includes at least one active device, and has an IC substrate side and a metallization side. The PCM switch wafer has a heat spreading side and a radio frequency (RF) terminal side. A heat spreader is formed in the PCM switch wafer. In one approach, the heat spreading side of the PCM switch wafer is bonded to the metallization side of the IC wafer, then a heating element is formed between the heat spreader and a PCM in the PCM switch wafer. In another approach, a heating element is formed between the heat spreader and a PCM in the PCM switch wafer, then the RF terminal side of the PCM switch wafer is bonded to the metallization side of the IC wafer.

公开(公告)号：US20200059229A1

公开(公告)日：2020-02-20

申请号：US16543466

申请日：2019-08-16

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： David J. Howard ,  Gregory P. Slovin ,  Nabil El-Hinnawy

IPC: H03K17/18 ,  G01R31/327 ,  H01L45/00

Abstract: A rapid testing read out integrated circuit (ROIC) includes phase-change material (PCM) radio frequency (RF) switches residing on an application specific integrated circuit (ASIC). Each PCM RF switch includes a PCM and a heating element transverse to the PCM. The ASIC is configured to provide amorphizing and crystallizing electrical pulses to a selected PCM RF switch. The ASIC is also configured to determine if the selected PCM RF switch is in an OFF state or in an ON state. In one implementation, a testing method using the ASIC is disclosed.

公开(公告)号：US20200059217A1

公开(公告)日：2020-02-20

申请号：US16420043

申请日：2019-05-22

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Chris Masse ,  David J. Howard ,  Nabil El-Hinnawy ,  Gregory P. Slovin

IPC: H03H7/01 ,  H03H7/12 ,  H04B1/16 ,  H04B17/21

Abstract: In tuning a radio frequency (RF) module including a non-volatile tunable RF filter, a desired frequency and an undesired frequency being provided by an amplifier of the RF module are detected. The non-volatile tunable RF filter is coupled to an output of the amplifier of the RF module. A factory setting of an adjustable capacitor in the non-volatile tunable RF filter is changed by factory-setting a state of a non-volatile RF switch, such that the non-volatile tunable RF filter substantially rejects the undesired frequency and substantially passes the desired frequency. The adjustable capacitor includes the non-volatile RF switch, and the factory setting of the adjustable capacitor corresponds to a factory-set state of the non-volatile RF switch. An end-user is prevented access to the non-volatile RF switch, so as prevent the end-user from modifying the factory-set state of the non-volatile RF switch.

公开(公告)号：US20200058862A1

公开(公告)日：2020-02-20

申请号：US16216008

申请日：2018-12-11

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： David J. Howard ,  Nabil El-Hinnawy ,  Gregory P. Slovin ,  Jefferson E. Rose

IPC: H01L45/00

Abstract: A significantly reduced parasitic capacitance phase-change maternal (PCM) radio frequency (RF) switch includes an RF clearance zone including a step-wise structure of intermediate interconnect segments and vias to connect PCM contacts to setback top routing interconnects. The said RF clearance zone does not include cross-over interconnect segments. A low-k dielectric is situated in the RF clearance zone. A closed-air gap is situated in the RF clearance zone within the low-k dielectric. The setback top routing interconnects are situated higher over a substrate than the PCM contacts and the intermediate interconnect segments. The PCM RF switch may further include an open-air gap situated between the setback top routing interconnects.

公开(公告)号：US20200058857A1

公开(公告)日：2020-02-20

申请号：US16185620

申请日：2018-11-09

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Jefferson E. Rose ,  Gregory P. Slovin ,  Nabil El-Hinnawy ,  Michael J. DeBar ,  David J. Howard

IPC: H01L45/00

Abstract: In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element underlying an active segment of the PCM are provided. A contact uniformity support layer is formed over the PCM. The PCM and the contact uniformity support layer are patterned. A contact dielectric is formed over the contact uniformity support layer. Slot lower portions of PCM contacts are formed extending through the contact dielectric and through the contact uniformity support layer, and connected to passive segments of the PCM. Wide upper portions of the PCM contacts are formed over the contact dielectric and over the slot lower portions of the PCM contacts. The contact dielectric separates the wide upper portions of the PCM contacts from the heating element so as to reduce parasitic capacitance of the RF switch. The contact uniformity support layer maintains a substantially constant thickness of the passive segments of the PCM.

公开(公告)号：US20200058853A1

公开(公告)日：2020-02-20

申请号：US16554492

申请日：2019-08-28

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Gregory P. Slovin ,  Nabil EI-Hinnawy ,  David J. Howard ,  Jefferson E. Rose

IPC: H01L45/00

Abstract: A radio frequency (RF) switch includes a heating element, an aluminum nitride layer situated over the heating element, and a phase-change material (PCM) situated over the aluminum nitride layer. An inside segment of the heating element underlies an active segment of the PCM, and an intermediate segment of the heating element is situated between a terminal segment of the heating element and the inside segment of the heating element. The aluminum nitride layer situated over the inside segment of the heating element provides thermal conductivity and electrical insulation between the heating element and the active segment of the PCM. The aluminum, nitride layer extends into the intermediate segment of the heating element and provides chemical protection to the intermediate segment of the heating element, such that the intermediate segment of the heating element remains substantially unetched and with substantially same thickness as the inside segment.