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公开(公告)号：US20200058866A1
公开(公告)日：2020-02-20
申请号：US16534328
申请日：2019-08-07
Applicant: Newport Fab, LLC dba Jazz Semiconductor
Inventor： David J. Howard , Nabil EI-Hinnawy , Gregory P. Slovin , Jefferson E. Rose
IPC: H01L45/00
Abstract: A semiconductor device includes a substrate, an integrated passive device (IPD), and a phase-change material (PCM) radio frequency (RF) switch. The PCM RF switch includes a heating element, a PCM situated over the heating element, and PCM contacts situated over passive segments of the PCM. The heating element extends transverse to the PCM, with a heater line underlying an active segment of the PCM. The PCM RF switch is situated over a heat spreader that is situated over the substrate. The heat spreader and/or the substrate dissipate heat generated by the heating element and reduce RF noise coupling between the PCM RF switch and the IPD. An electrically insulating layer can be situated between the heat spreader and the substrate. In another approach, the PCM RF switch is situated over an RF isolation region that allows the substrate to dissipate heat and that reduces RF noise coupling.
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公开(公告)号：US20200058856A1
公开(公告)日：2020-02-20
申请号：US16550119
申请日：2019-08-23
Applicant: Newport Fab, LLC dba Jazz Semiconductor
Inventor： David J. Howard , Jefferson E. Rose , Gregory P. Slovin , Nabil EI-Hinnawy
IPC: H01L45/00
Abstract: A radio frequency (RF) switch includes a stressed phase-change material (PCM) and a heating element underlying an active segment of the stressed PCM and extending outward and transverse to the stressed PCM. In one approach, at least one transition layer is situated over the stressed PCM. An encapsulation layer is situated over the at least one transition layer and on first and second sides of the stressed PCM. A stressor layer is situated over the encapsulation layer and the said stressed PCM. Alternatively or additionally, contacts of the RF switch extend into passive segments of a PCM, wherein adhesion layers adhere the passive segments of the PCM to the contacts.
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3.发明申请公开(公告)号：US20200152868A1
公开(公告)日：2020-05-14
申请号：US16732543
申请日：2020-01-02
Applicant: Newport Fab, LLC dba Jazz Semiconductor
Inventor： David J. Howard , Jefferson E. Rose , Gregory P. Slovin , Nabil EI-Hinnawy , Michael J. DeBar
IPC: H01L45/00
Abstract: A radio frequency (RF) switch includes a phase-change material (PCM) and a heating element underlying an active segment of the PCM, the PCM and heating element being situated over a substrate. A contact dielectric is over the PCM. PCM contacts have upper portions and uniform plate slot lower portions. The uniform plate slot lower portions have a total plate resistance RPLATE, and a total plate slot interface resistance RPLATE-INT. The upper portions have a total capacitance CUPPER to the uniform plate slot lower portions, and the PCM has a total capacitance CPCM to the substrate. The uniform plate slot lower portions significantly reduce a product of (RPLATE+RPLATE-INT) and (CUPPER+CPCM). As an alternative to the uniform plate slot lower portions, PCM contacts have segmented lower portions. The segmented lower portions significantly reduce CUPPER.
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公开(公告)号：US20200119265A1
公开(公告)日：2020-04-16
申请号：US16709823
申请日：2019-12-10
Applicant: Newport Fab, LLC dba Jazz Semiconductor
Inventor： Jefferson E. Rose , Gregory P. Slovin , David J. Howard , Michael J. DeBar , Nabil EI-Hinnawy
Abstract: In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element, underlying an active segment of the PCM and extending outward and transverse to the PCM, are provided. Lower portions of PCM contacts for connection to passive segments of the PCM are formed, wherein the passive segments extend outward and are transverse to the heating element. Upper portions of the PCM contacts are formed from a lower interconnect metal. Heating element contacts are formed cross-wise to the PCM contacts. The heating element contacts can comprise a top interconnect metal directly connecting with terminal segments of the heating element. The heating element contacts can comprise a top interconnect metal and intermediate metal segments for connecting with the terminal segments of the heating element.
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5.发明申请公开(公告)号：US20200136042A1
公开(公告)日：2020-04-30
申请号：US16731487
申请日：2019-12-31
Applicant: Newport Fab, LLC dba Jazz Semiconductor
Inventor： David J. Howard , Jefferson E. Rose , Gregory P. Slovin , Nabil EI-Hinnawy , Michael J. DeBar
IPC: H01L45/00
Abstract: A radio frequency (RF) switch includes a phase-change material (PCM) and a heating element underlying an active segment of the PCM, the PCM and heating element being situated over a substrate. A contact dielectric is over the PCM. PCM contacts have upper portions and uniform plate slot lower portions. The uniform plate slot lower portions have a total plate resistance RPLATE, and a total plate slot interface resistance RPLATE-INT. The upper portions have a total capacitance CUPPER to the uniform plate slot lower portions, and the PCM has a total capacitance CPCM to the substrate. The uniform plate slot lower portions significantly reduce a product of (RPLATE+RPLATE-INT) and (CUPPER+CPCM). As an alternative to the uniform plate slot lower portions, PCM contacts have segmented lower portions. The segmented lower portions significantly reduce CUPPER.
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Patent Agency Ranking
公开(公告)号：US20200058853A1
公开(公告)日：2020-02-20
申请号：US16554492
申请日：2019-08-28
Applicant: Newport Fab, LLC dba Jazz Semiconductor
Inventor： Gregory P. Slovin , Nabil EI-Hinnawy , David J. Howard , Jefferson E. Rose
IPC: H01L45/00
Abstract: A radio frequency (RF) switch includes a heating element, an aluminum nitride layer situated over the heating element, and a phase-change material (PCM) situated over the aluminum nitride layer. An inside segment of the heating element underlies an active segment of the PCM, and an intermediate segment of the heating element is situated between a terminal segment of the heating element and the inside segment of the heating element. The aluminum nitride layer situated over the inside segment of the heating element provides thermal conductivity and electrical insulation between the heating element and the active segment of the PCM. The aluminum, nitride layer extends into the intermediate segment of the heating element and provides chemical protection to the intermediate segment of the heating element, such that the intermediate segment of the heating element remains substantially unetched and with substantially same thickness as the inside segment.
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7.发明申请公开(公告)号：US20200169239A1
公开(公告)日：2020-05-28
申请号：US16775625
申请日：2020-01-29
Applicant: Newport Fab, LLC dba Jazz Semiconductor
Inventor： Chris Masse , David J. Howard , Nabil EI-Hinnawy , Gregory P. Slovin
Abstract: In tuning a radio frequency (RF) module including a non-volatile tunable RF filter, a desired frequency and an undesired frequency being provided by an amplifier of the RF module are detected. The non-volatile tunable RF filter is coupled to an output of the amplifier of the RF module. A factory setting of an adjustable capacitor in the non-volatile tunable RF filter is changed by factory-setting a state of a non-volatile RF switch, such that die non-volatile tunable RF filter substantially rejects die undesired frequency and substantially passes die desired frequency. The adjustable capacitor includes die non-volatile RF switch, and the factory setting of the adjustable capacitor corresponds to a factory-set state of the non-volatile RF switch. An end-user is prevented access to the non-volatile RF switch, so as prevent the end-user from modifying the factory-set state of the non-volatile RF switch.
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8.发明申请公开(公告)号：US20200075672A1
公开(公告)日：2020-03-05
申请号：US16676029
申请日：2019-11-06
Applicant: Newport Fab, LLC dba Jazz Semiconductor
Inventor： Gregory P. Slovin , Nabil EI-Hinnawy , Jefferson E. Rose , David J. Howard
Abstract: In fabricating a semiconductor device, a shared material is formed in a resonator region of the semiconductor device and in a phase-change material (PCM) switch region of the semiconductor device. A portion of the shared material is removed to concurrently form a heat spreader comprising the shared material in the PCM switch region and a piezoelectric segment comprising the shared material in the resonator region. The piezoelectric segment in the resonator region and the heat spreader in the PCM switch region are situated at substantially the same level in the semiconductor device. The PCM switch region includes a heating element between the heat spreader and a PCM. The resonator region includes the piezoelectric segment between two electrodes.
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公开(公告)号：US20200058865A1
公开(公告)日：2020-02-20
申请号：US16402630
申请日：2019-05-03
Applicant: Newport Fab, LLC dba Jazz Semiconductor
Inventor： David J. Howard , Nabil EI-Hinnawy
IPC: H01L45/00
Abstract: A semiconductor chip or system, such as a multi-chip module (MCM), a system-in-package (SiP), and/or a printed circuit board (PCB) module, includes a substrate, a resonator and/or a micro-electrical-mechanical system (MEMS), and a phase-change material (PCM) switch. The PCM switch includes a heating element, a PCM situated over the heating element, and PCM contacts connected to passive segments of the PCM. The heating element is transverse to the PCM and approximately defines an active segment of the PCM. The PCM contacts are electrically connected to the resonator and/or the MEMS in a shared routing region of the semiconductor chip. The PCM switch is configured to engage or disengage the resonator and/or the MEMS. In one approach, a plurality of PCM switches are capable of reconfiguring an array of resonators and/or an array of MEMS. In another approach, a redundant PCM switch is electrically connected to a redundant resonator and/or a redundant MEMS.
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10.发明申请公开(公告)号：US20200287281A1
公开(公告)日：2020-09-10
申请号：US16884775
申请日：2020-05-27
Applicant: Newport Fab, LLC dba Jazz Semiconductor
Inventor： David J. Howard , Gregory P. Slovin , Nabil EI-Hinnawy
IPC: H01Q3/26 , G01R31/26 , G01R31/327
Abstract: A rapid testing read out integrated circuit (ROIC) includes phase-change material (PCM) radio frequency (RF) switches residing on an application specific integrated circuit (ASIC). Each PCM RF switch includes a PCM and a heating element transverse to the PCM. The ASIC is configured to provide amorphizing and crystallizing electrical pulses to a selected PCM RF switch. The ASIC is also configured to determine if the selected PCM RF switch is in an OFF state or in an ON state. In one implementation, a testing method using the ASIC is disclosed.
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