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公开(公告)号：US11276764B1
公开(公告)日：2022-03-15
申请号：US16988686
申请日：2020-08-09
发明人： Yuefei Yang , Shing-Kuo Wang , Dheeraj Mohata , Liping Daniel Hou
IPC分类号： H01L29/66 , H01L23/66 , H01L29/737 , H01L29/423 , H01L29/40 , H01L29/417
摘要： A device including a semiconductor die, a first contact, a second contact, a third contact, a first passivation layer, a second passivation layer and an interconnect metal. The semiconductor die may include a plurality of semiconductor layers disposed on a GaAs substrate. The first contact may be electrically coupled to a semiconductor emitter layer. The second contact may be electrically coupled to a semiconductor base layer. The third contact may be electrically coupled to a semiconductor sub-collector layer. The first passivation layer may cover one or more of the semiconductor and the contacts. The first passivation layer may comprise an inorganic insulator. The second passivation layer may comprise an inorganic insulator or organic polymer with low dielectric constant deposited on the passivation layer. The interconnect metal may be coupled to the first contact and separated from the first passivation layer by the second passivation layer.
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公开(公告)号：US20210111699A1
公开(公告)日：2021-04-15
申请号：US17071810
申请日：2020-10-15
发明人： Liping D. Hou , Alexander M. Vigo , Shing-Kuo Wang
摘要： A bulk acoustic (BAW) resonator having a multilayer base and method of fabricating the bulk acoustic resonator is disclosed. A BAW resonator comprises a substrate having a cavity and including a frame around the cavity, a multilayer base adjacent the cavity and supported by the frame. The multilayer base includes a first layer of crystalline material having a first lattice constant and a second layer of crystalline material having a second lattice constant that is distinct from the first lattice constant. The BAW resonator further includes a stack over the multilayer base. The stack includes a first electrode formed on the multilayer base, a piezoelectric layer having a first side coupled to the first electrode and a second side opposite to the first side of the piezoelectric layer, and a second electrode coupled to the second side of the piezoelectric layer.
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公开(公告)号：US20240243723A1
公开(公告)日：2024-07-18
申请号：US18415521
申请日：2024-01-17
发明人： Romain Gerbe , Liping D. Hou , Shing-Kuo Wang , Yuefei Yang , Kun-Mao Pan , Andy Chien-Hsiang Chen
CPC分类号： H03H9/173 , H03H9/02086 , H03H9/175
摘要： A bulk acoustic resonator includes a stack structures, including a piezoelectric layer having a first side and an opposing second side; a first electrode disposed under the first side of the piezoelectric layer; a second electrode disposed over the second side of the piezoelectric layer; and a multistep structure with a bottom part having first dimensions disposed between the piezoelectric layer and second electrode and a second part having second dimensions, different from the first dimensions, disposed between the bottom part of the multistep structure and the second electrode. An active region of the stack is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode, and the multistep structure is arranged to provide destructive interference of lateral acoustic waves within the bulk acoustic resonator.
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公开(公告)号：US12021498B2
公开(公告)日：2024-06-25
申请号：US17071810
申请日：2020-10-15
发明人： Liping D. Hou , Alexander M. Vigo , Shing-Kuo Wang
CPC分类号： H03H9/02015 , H03H9/02102 , H03H9/0211 , H03H9/02118 , H03H9/131 , H03H9/17 , H03H9/173 , H10N30/1051 , H10N30/85
摘要： A bulk acoustic (BAW) resonator having a multilayer base and method of fabricating the bulk acoustic resonator is disclosed. A BAW resonator comprises a substrate having a cavity and including a frame around the cavity, a multilayer base adjacent the cavity and supported by the frame. The multilayer base includes a first layer of crystalline material having a first lattice constant and a second layer of crystalline material having a second lattice constant that is distinct from the first lattice constant. The BAW resonator further includes a stack over the multilayer base. The stack includes a first electrode formed on the multilayer base, a piezoelectric layer having a first side coupled to the first electrode and a second side opposite to the first side of the piezoelectric layer, and a second electrode coupled to the second side of the piezoelectric layer.
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公开(公告)号：US11979134B2
公开(公告)日：2024-05-07
申请号：US17071831
申请日：2020-10-15
发明人： Liping D. Hou , Shing-Kuo Wang
CPC分类号： H03H9/02015 , H03H9/02102 , H03H9/0211 , H03H9/02118 , H03H9/131 , H03H9/17 , H03H9/173 , H10N30/1051 , H10N30/85
摘要： A bulk acoustic wave resonator with better performance and better manufacturability is described. The bulk acoustic wave resonator includes a composite piezoelectric film. The composite piezoelectric film includes a first sublayer of a first piezoelectric material, a second sublayer of a second piezoelectric material, and a third sublayer of a third piezoelectric material that is disposed between the first sublayer and the second sublayer. The first piezoelectric material has a first lattice constant, the second piezoelectric material has a second lattice constant, and the third piezoelectric material has a third lattice constant that is distinct from the first lattice constant and from the second lattice constant. The composite piezoelectric film may include a sequence of alternating sublayers of two or more distinct piezoelectric materials, or a sequence of composition graded layers having gradually changing composition.
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公开(公告)号：US11736088B2
公开(公告)日：2023-08-22
申请号：US16820625
申请日：2020-03-16
发明人： Robert B. Stokes , Alvin M. Kong , Liping D. Hou , Dae-Jin Hyun , Shing-Kuo Wang
CPC分类号： H03H9/173 , H03H9/02015 , H03H9/02118 , H03H9/02574 , H03H9/131 , H03H2009/0233
摘要： Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator and/or for obstructing propagation of lateral waves out of an active region of the bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer to form a stack having the active region. The piezoelectric layer in the active region is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. One or more perforations in the first electrode, the piezoelectric layer and/or the second electrode, and/or one or more posts or beams supporting the stack, reduce resonance of spurious waves and obstruct propagation of lateral acoustic waves out of the active region.
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公开(公告)号：US20210250012A1
公开(公告)日：2021-08-12
申请号：US17240943
申请日：2021-04-26
发明人： Liping D. Hou , Kun-Mao Pan , Shing-Kuo Wang
摘要： Devices and processes for preparing devices are described for a bulk acoustic wave resonator. A stack formed over a substrate includes a piezoelectric film element, a first (e.g., bottom) electrode coupled to a first side of the piezoelectric film element, and a second (e.g., top) electrode that is coupled to a second side of the piezoelectric film element. A cavity is positioned between the stack and the substrate. The resonator includes one or more planarizing layers, including a first planarizing layer around the cavity, wherein a first portion of the first electrode is adjacent the cavity and a second portion of the first electrode is adjacent the first planarizing layer. The resonator optionally includes an air reflector around the perimeter of the piezoelectric film element. The stack is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode.
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公开(公告)号：US20210111701A1
公开(公告)日：2021-04-15
申请号：US17071836
申请日：2020-10-15
发明人： Liping D. Hou , Shing-Kuo Wang
摘要： A bulk acoustic wave (BAW) resonator with better performance and better manufacturability is described. A BAW resonator includes a substrate, a BAW stack disposed over the substrate, a first temperature compensation layer disposed between the substrate and the stack, and a second temperature compensation layer disposed over the stack. The BAW stack includes a piezoelectric layer disposed between a first electrode and a second electrode. A method of making a BAW resonator is also disclosed. The method includes forming a first base layer over a substrate including a layer of sacrificial material and a frame surrounding the layer of sacrificial material, forming a first temperature compensation layer over the first base layer, forming a BAW stack over the first temperature compensation layer, forming a second temperature compensation layer over the BAW stack, and removing the layer of sacrificial material to form a cavity adjacent the base layer.
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公开(公告)号：US10175099B2
公开(公告)日：2019-01-08
申请号：US15668639
申请日：2017-08-03
发明人： Samuel C. Wang , Peter Lao , Dhiraj Kumar
IPC分类号： G01J1/02 , G01J1/04 , G02B6/42 , H01S5/0683
摘要： A device is disclosed for monitoring power from a laser diode. The device includes a substrate having a top surface and a first facet perpendicular to the top surface through which light enters the substrate. The device further includes a second facet onto which light that has entered the substrate through the first facet along an optical axis that is non-normal to the first facet is incident. The device further includes a photodiode fabricated on the top surface of the substrate for measuring an intensity of the light that enters the first facet of the substrate along the optical axis that is non-normal to the first facet. The light that has entered the substrate through the first facet along the optical axis that is non-normal to the first facet is reflected by the second facet toward a photoactive region of the photodiode.
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10.发明授权公开(公告)号：US12027616B1
公开(公告)日：2024-07-02
申请号：US17166258
申请日：2021-02-03
IPC分类号： H01L29/778 , H01L29/20 , H01L29/40 , H01L29/423
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/402 , H01L29/42372
摘要： A device includes a semiconductor die, a source contact, a drain contact, a first passivation layer, a T-shaped gate contact, a field plate, and a second passivation layer. The semiconductor die generally includes a plurality of semiconductor layers disposed on an insulating substrate. The source contact and the drain contact are electrically coupled to a channel formed in the semiconductor layers and defining an active area of the device. The first passivation layer generally covers the active area of the device, the source contact, and the drain contact. The T-shaped gate contact may be disposed within the active area of the device. The T-shaped gate contact is generally electrically separated from the channel and comprises a column portion and a cap portion. The field plate may be disposed above the active area of the device. The field plate is generally adjacent to and laterally separated from the cap portion of the T-shaped gate contact. The second passivation layer generally covers the first passivation layer, the cap portion of the T-shaped gate contact, and the field plate.
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