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公开(公告)号：US20210250012A1
公开(公告)日：2021-08-12
申请号：US17240943
申请日：2021-04-26
发明人： Liping D. Hou , Kun-Mao Pan , Shing-Kuo Wang
摘要： Devices and processes for preparing devices are described for a bulk acoustic wave resonator. A stack formed over a substrate includes a piezoelectric film element, a first (e.g., bottom) electrode coupled to a first side of the piezoelectric film element, and a second (e.g., top) electrode that is coupled to a second side of the piezoelectric film element. A cavity is positioned between the stack and the substrate. The resonator includes one or more planarizing layers, including a first planarizing layer around the cavity, wherein a first portion of the first electrode is adjacent the cavity and a second portion of the first electrode is adjacent the first planarizing layer. The resonator optionally includes an air reflector around the perimeter of the piezoelectric film element. The stack is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode.
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公开(公告)号：US20210111701A1
公开(公告)日：2021-04-15
申请号：US17071836
申请日：2020-10-15
发明人： Liping D. Hou , Shing-Kuo Wang
摘要： A bulk acoustic wave (BAW) resonator with better performance and better manufacturability is described. A BAW resonator includes a substrate, a BAW stack disposed over the substrate, a first temperature compensation layer disposed between the substrate and the stack, and a second temperature compensation layer disposed over the stack. The BAW stack includes a piezoelectric layer disposed between a first electrode and a second electrode. A method of making a BAW resonator is also disclosed. The method includes forming a first base layer over a substrate including a layer of sacrificial material and a frame surrounding the layer of sacrificial material, forming a first temperature compensation layer over the first base layer, forming a BAW stack over the first temperature compensation layer, forming a second temperature compensation layer over the BAW stack, and removing the layer of sacrificial material to form a cavity adjacent the base layer.
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公开(公告)号：US10175099B2
公开(公告)日：2019-01-08
申请号：US15668639
申请日：2017-08-03
发明人： Samuel C. Wang , Peter Lao , Dhiraj Kumar
IPC分类号： G01J1/02 , G01J1/04 , G02B6/42 , H01S5/0683
摘要： A device is disclosed for monitoring power from a laser diode. The device includes a substrate having a top surface and a first facet perpendicular to the top surface through which light enters the substrate. The device further includes a second facet onto which light that has entered the substrate through the first facet along an optical axis that is non-normal to the first facet is incident. The device further includes a photodiode fabricated on the top surface of the substrate for measuring an intensity of the light that enters the first facet of the substrate along the optical axis that is non-normal to the first facet. The light that has entered the substrate through the first facet along the optical axis that is non-normal to the first facet is reflected by the second facet toward a photoactive region of the photodiode.
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公开(公告)号：US11276764B1
公开(公告)日：2022-03-15
申请号：US16988686
申请日：2020-08-09
发明人： Yuefei Yang , Shing-Kuo Wang , Dheeraj Mohata , Liping Daniel Hou
IPC分类号： H01L29/66 , H01L23/66 , H01L29/737 , H01L29/423 , H01L29/40 , H01L29/417
摘要： A device including a semiconductor die, a first contact, a second contact, a third contact, a first passivation layer, a second passivation layer and an interconnect metal. The semiconductor die may include a plurality of semiconductor layers disposed on a GaAs substrate. The first contact may be electrically coupled to a semiconductor emitter layer. The second contact may be electrically coupled to a semiconductor base layer. The third contact may be electrically coupled to a semiconductor sub-collector layer. The first passivation layer may cover one or more of the semiconductor and the contacts. The first passivation layer may comprise an inorganic insulator. The second passivation layer may comprise an inorganic insulator or organic polymer with low dielectric constant deposited on the passivation layer. The interconnect metal may be coupled to the first contact and separated from the first passivation layer by the second passivation layer.
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公开(公告)号：US20210111699A1
公开(公告)日：2021-04-15
申请号：US17071810
申请日：2020-10-15
发明人： Liping D. Hou , Alexander M. Vigo , Shing-Kuo Wang
摘要： A bulk acoustic (BAW) resonator having a multilayer base and method of fabricating the bulk acoustic resonator is disclosed. A BAW resonator comprises a substrate having a cavity and including a frame around the cavity, a multilayer base adjacent the cavity and supported by the frame. The multilayer base includes a first layer of crystalline material having a first lattice constant and a second layer of crystalline material having a second lattice constant that is distinct from the first lattice constant. The BAW resonator further includes a stack over the multilayer base. The stack includes a first electrode formed on the multilayer base, a piezoelectric layer having a first side coupled to the first electrode and a second side opposite to the first side of the piezoelectric layer, and a second electrode coupled to the second side of the piezoelectric layer.
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公开(公告)号：US20220416149A1
公开(公告)日：2022-12-29
申请号：US17680231
申请日：2022-02-24
发明人： Liping D. Hou , Shing-Kuo Wang
摘要： A bulk acoustic wave resonator includes a substrate, and a stack that is supported by the substrate. The stack includes a first electrode, a multilayer buffer, a piezoelectric layer, and a second electrode. The multilayer buffer is disposed between the first electrode and the piezoelectric layer, and the piezoelectric layer is disposed between the multilayer buffer and the second electrode. The multilayer buffer includes two or more pairs of alternating layers. A first pair of the two or more pairs include a first layer of crystalline material having a first lattice constant, and a second layer of crystalline material having a lattice constant that is distinct from the first lattice constant.
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公开(公告)号：US20210111702A1
公开(公告)日：2021-04-15
申请号：US17071849
申请日：2020-10-15
摘要： A bulk acoustic wave (BAW) resonator includes a substrate, a stack over the substrate and including a piezoelectric layer disposed between two electrode layers, and one or more edge frames. The one or more edge frames can be a raised metal frame extending parallel to a periphery of an active region of the stack and has one or more slanted cuts such that the edge frame does not form a closed loop and loss of acoustic energy in the active region through the one or more cuts is reduced, minimized or prevented. Alternatively or additionally, the one or more edge frames include a recessed edge frame in the form of a trench in the piezoelectric layer extending parallel to a boundary of the active region, and may further include a second edge frame formed on the first electrode and embedded in the piezoelectric layer.
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公开(公告)号：US11335815B1
公开(公告)日：2022-05-17
申请号：US17180743
申请日：2021-02-20
发明人： Yuefei Yang , Shing-Kuo Wang , Wing Yau
IPC分类号： H01L29/93 , H01L29/417 , H01L29/66 , H01L23/31 , H01L23/485 , H01L23/482 , H01L29/20
摘要： A semiconductor device includes a semiconductor die, an N-doped region, an N-contact metal, a PN junction mesa, a P-contact metal, a first passivation layer, an anode feed metal, and a cathode feed metal. The semiconductor die may include a plurality of semiconductor layers disposed on an insulating substrate. The N-doped region may define an active area of the device. The N-contact metal may be disposed on a first portion of the N-doped region. The PN junction mesa may be disposed on a second portion of the N-doped region. The PN junction mesa may comprise a hyperabrupt N-doping layer disposed on the first portion of the N-doped region and a P-doped layer disposed on the hyperabrupt N-doping layer. The P-contact metal may be disposed on the P-doped layer of the PN junction mesa. The first passivation layer may cover the semiconductor layers of the semiconductor device and have openings for the N-contact metal and the P-contact metal. The anode feed metal may connect the P-contact metal to a first bond pad. The anode feed metal generally forms an arch from the P-contact metal to the first bond pad and the arch defines a space between the anode feed metal and the first passivation layer covering the semiconductor layers and a the of the PN junction mesa.
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公开(公告)号：US10601391B2
公开(公告)日：2020-03-24
申请号：US15789109
申请日：2017-10-20
摘要： Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer. The piezoelectric layer is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. Perforations in the first electrode, the piezoelectric layer and/or the second electrode, and/or posts or beams supporting the second electrode, reduce resonance of spurious waves.
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公开(公告)号：US20210111693A1
公开(公告)日：2021-04-15
申请号：US17071831
申请日：2020-10-15
发明人： Liping D. Hou , Shing-Kuo Wang
摘要： A bulk acoustic wave resonator with better performance and better manufacturability is described. The bulk acoustic wave resonator includes a composite piezoelectric film. The composite piezoelectric film includes a first sublayer of a first piezoelectric material, a second sublayer of a second piezoelectric material, and a third sublayer of a third piezoelectric material that is disposed between the first sublayer and the second sublayer. The first piezoelectric material has a first lattice constant, the second piezoelectric material has a second lattice constant, and the third piezoelectric material has a third lattice constant that is distinct from the first lattice constant and from the second lattice constant. The composite piezoelectric film may include a sequence of alternating sublayers of two or more distinct piezoelectric materials, or a sequence of composition graded layers having gradually changing composition.
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