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    POLARIZED LIGHT DETECTING DEVICE AND FABRICATION METHODS OF THE SAME
    2.
    发明申请
    POLARIZED LIGHT DETECTING DEVICE AND FABRICATION METHODS OF THE SAME 审中-公开
    偏振光检测器件及其制造方法

    公开(公告)号：US20140339666A1

    公开(公告)日：2014-11-20

    申请号：US14450812

    申请日：2014-08-04

    申请人： ZENA TECHNOLOGIES, INC.

    发明人： Young-June Yu ,  Munib Wober

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14643 ,  G01J1/429 ,  G01J4/04 ,  H01L27/1443 ,  H01L27/14605 ,  H01L27/14629 ,  H01L27/14683 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/105 ,  H01L31/107 ,  Y02E10/50

    摘要： Described herein is a device operable to detect polarized light comprising: a substrate; a first subpixel; a second subpixel adjacent to the first subpixel; a first plurality of features in the first subpixel and a second plurality of features in the second subpixel, wherein the first plurality of features extend essentially perpendicularly from the substrate and extend essentially in parallel in a first direction parallel to the substrate and the second plurality of features extend essentially perpendicularly from the substrate and extend essentially in parallel in a second direction parallel to the substrate; wherein the first direction and the second direction are different; the first plurality of features and the second plurality of features react differently to the polarized light.

    摘要翻译： 这里描述的是可操作以检测偏振光的装置，包括：基板; 第一子像素 与所述第一子像素相邻的第二子像素; 所述第一子像素中的第一多个特征和所述第二子像素中的第二多个特征，其中所述第一多个特征基本上垂直于所述基底延伸并且在平行于所述基底的第一方向上基本上平行延伸，并且所述第二多个 特征基本上垂直于基底延伸并且在平行于基底的第二方向基本上平行延伸; 其中所述第一方向和所述第二方向不同; 第一多个特征和第二多个特征对偏振光的反应不同。

    NANOWIRE STRUCTURED COLOR FILTER ARRAYS AND FABRICATION METHOD OF THE SAME
    3.
    发明申请
    NANOWIRE STRUCTURED COLOR FILTER ARRAYS AND FABRICATION METHOD OF THE SAME 审中-公开

    公开(公告)号：US20160225811A1

    公开(公告)日：2016-08-04

    申请号：US15093928

    申请日：2016-04-08

    申请人： ZENA TECHNOLOGIES, INC.

    发明人： Young-June Yu ,  Munib Wober

    IPC分类号： H01L27/146 ,  H01L29/06 ,  H01L27/148

    CPC分类号： H01L27/14621 ,  B82Y20/00 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14649 ,  H01L27/14685 ,  H01L27/14875 ,  H01L29/0676

    摘要： Color filter array devices and methods of making color filter array devices are disclosed herein. A color filter array may include a substrate having a plurality of pixels thereon, one or more nanowires associated with each of the plurality of pixels, wherein each of the one or more nanowires extends substantially perpendicularly from the substrate, and an optical coupler associated with each of the one or more nanowires. A method of making a color filter array may include, making an array of nanowires, wherein each of the nanowires extend substantially perpendicularly from a substrate, disposing a transparent polymer material to substantially encapsulate the nanowires, removing the nanowires from the substrate, providing a pixel array comprising a plurality of pixels, wherein a hard polymer substantially covers an image plane of the pixel array, disposing the array of nanowires on the pixel array, and removing the transparent polymer encapsulating the nanowires.

    Active pixel sensor with nanowire structured photodetectors
    4.
    发明授权
    Active pixel sensor with nanowire structured photodetectors 有权
    有源像素传感器与纳米线结构光电探测器

    公开(公告)号：US09490283B2

    公开(公告)日：2016-11-08

    申请号：US14293164

    申请日：2014-06-02

    申请人： ZENA TECHNOLOGIES, INC.

    发明人： Young-June Yu ,  Munib Wober

    IPC分类号： H01L29/15 ,  H01L27/146 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/101 ,  H01L31/102 ,  H01L31/112

    CPC分类号： H01L27/14612 ,  H01L27/1461 ,  H01L27/14625 ,  H01L27/14643 ,  H01L27/14645 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/0352 ,  H01L31/035227 ,  H01L31/03529 ,  H01L31/101 ,  H01L31/102 ,  H01L31/1126 ,  Y02E10/50

    摘要： An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may include a readout circuit which may include a reset transistor, charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light to the substrate. Light of different wavelengths can be detected using the imaging device.

    摘要翻译： 一种形成为组合CMOS制造工艺和纳米线制造工艺的有源像素阵列的成像器件。 阵列中的像素可以包括围绕纳米线的单个或多个摄像机。 摄影门控制纳米线中的电位分布，允许在纳米线中积累光生电荷并传输电荷用于信号读出。 每个像素可以包括读出电路，其可以包括复位晶体管，电荷转移开关晶体管，源极跟随放大器和像素选择晶体管。 纳米线通常构造为在体半导体衬底上的垂直杆，以接收入射到纳米线尖端的光能。 纳米线可以被配置为用作被配置为将光引导到衬底的光电检测器或波导。 可以使用成像装置检测不同波长的光。

    BIFACIAL PHOTOVOLTAIC DEVICES
    5.
    发明申请
    BIFACIAL PHOTOVOLTAIC DEVICES 审中-公开
    双极光电器件

    公开(公告)号：US20160020347A1

    公开(公告)日：2016-01-21

    申请号：US14334848

    申请日：2014-07-18

    申请人： Zena Technologies, Inc.

    发明人： Young-June Yu ,  Munib Wober

    IPC分类号： H01L31/0352 ,  H01L31/0232 ,  H02S50/15 ,  H01L31/0216

    CPC分类号： H01L31/03529 ,  H01L31/035281 ,  H01L31/0684 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： Described herein is a photovoltaic device operable to convert light to electricity, comprising a substrate, a first plurality of structures essentially perpendicular to the substrate and disposed on a first face of the substrate, and a second plurality of structures essentially perpendicular to the substrate and disposed on a second face of the substrate, wherein both the first plurality and the second plurality of structures are configured to convert light to electricity.

    摘要翻译： 本文描述的是可操作以将光转换成电的光电器件，包括基底，基本上垂直于基底的第一多个结构并且设置在基底的第一面上，以及基本上垂直于基底的第二多个结构， 在所述基板的第二面上，其中所述第一多个结构和所述第二多个结构都被配置为将光转换成电。

    VERTICAL PILLAR STRUCTURE PHOTOVOLTAIC DEVICES AND METHOD FOR MAKING THE SAME
    8.
    发明申请
    VERTICAL PILLAR STRUCTURE PHOTOVOLTAIC DEVICES AND METHOD FOR MAKING THE SAME 审中-公开
    立柱式结构光伏器件及其制造方法

    公开(公告)号：US20160005892A1

    公开(公告)日：2016-01-07

    申请号：US14322503

    申请日：2014-07-02

    申请人： ZENA TECHNOLOGIES, INC.

    发明人： Young-June Yu

    IPC分类号： H01L31/0352 ,  H01L31/18 ,  H01L31/072

    CPC分类号： H01L31/03529 ,  H01L31/02167 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    摘要： Thin substrate photovoltaic and methods for making them are disclosed herein. In an embodiment, a photovoltaic device may include a substrate comprising a semiconductor material, one or more core structures, each extending essentially perpendicularly from a first surface of the substrate such that the core structures and the substrate form a single crystal, a shell layer disposed at least on a portion of a sidewall of the core structures and on the first surface, and a conductive layer disposed between adjacent core structures. The conductive layer forms an ohmic contact with the shell layer disposed on the first surface and between the adjacent core structures.

    摘要翻译： 本文公开了薄衬底光伏及其制造方法。 在一个实施例中，光伏器件可以包括包括半导体材料的衬底，一个或多个芯结构，每个芯结构基本上垂直于衬底的第一表面延伸，使得芯结构和衬底形成单晶，壳层设置 至少在芯结构的侧壁的一部分上和第一表面上，以及设置在相邻芯结构之间的导电层。 导电层与设置在第一表面上和相邻芯结构之间的壳层形成欧姆接触。