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    Magnetic memory device and write/read method of the same
    1.
    发明授权
    Magnetic memory device and write/read method of the same 有权
    磁存储器件和写/读方法相同

    公开(公告)号：US07859881B2

    公开(公告)日：2010-12-28

    申请号：US11672261

    申请日：2007-02-07

    申请人： Yoshihisa Iwata ,  Katsuyuki Fujita ,  Yuui Shimizu

    发明人： Yoshihisa Iwata ,  Katsuyuki Fujita ,  Yuui Shimizu

    IPC分类号： G11C19/00

    CPC分类号： G11C19/0841 ,  G11C5/02 ,  G11C11/14 ,  G11C21/00 ,  Y10S977/933

    摘要： A magnetic memory device includes a first magnetic line which has a plurality of cells made of magnetic domains partitioned by domain walls, and in which information is recorded in each cell, a first write element formed at one end portion of the first magnetic line, and a first read element formed at the other end portion of the first magnetic line.

    摘要翻译： 一种磁存储器件包括：第一磁线，其具有由畴壁分隔的磁畴构成的多个单元，并且其中信息被记录在每个单元中，形成在第一磁线的一个端部处的第一写入元件，以及 形成在第一磁性线的另一端部的第一读取元件。

    Semiconductor memory device having memory cells including ferromagnetic films and control method thereof
    3.
    发明授权
    Semiconductor memory device having memory cells including ferromagnetic films and control method thereof 失效
    具有包含铁磁膜的存储单元的半导体存储器件及其控制方法

    公开(公告)号：US07035137B2

    公开(公告)日：2006-04-25

    申请号：US10807454

    申请日：2004-03-24

    申请人： Yoshihisa Iwata ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Yuui Shimizu

    发明人： Yoshihisa Iwata ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Yuui Shimizu

    IPC分类号： G11C11/00 ,  G11C7/04

    CPC分类号： G11C11/15

    摘要： A semiconductor memory device comprises word lines, bit lines, memory cells, a row decoder, a column decoder, and a write circuit. The word lines are formed along a first direction. The bit lines are formed along a second direction. Memory cells include magneto-resistive elements and are arranged at intersections of the word lines and the bit lines. The row decoder selects at least one of the word lines. The column decoder selects at least one of the bit lines. The write circuit supplies first and second write currents to a selected word line and selected bit line respectively and writes data into a selected memory cell arranged at the intersection of the selected word line and the selected bit line. The write circuit changes the current values of the first and second write currents according to a temperature change.

    摘要翻译： 半导体存储器件包括字线，位线，存储单元，行解码器，列解码器和写电路。 字线沿着第一方向形成。 位线沿着第二方向形成。 存储单元包括磁阻元件，并且布置在字线和位线的交点处。 行解码器选择至少一个字线。 列解码器选择至少一个位线。 写入电路分别向所选择的字线和所选位线提供第一和第二写入电流，并将数据写入布置在所选择的字线和所选位线的交点处的选定存储单元。 写入电路根据温度变化改变第一和第二写入电流的电流值。

    Semiconductor memory device having memory cells including ferromagnetic films and control method thereof
    6.
    发明申请
    Semiconductor memory device having memory cells including ferromagnetic films and control method thereof 失效
    具有包含铁磁膜的存储单元的半导体存储器件及其控制方法

    公开(公告)号：US20050036362A1

    公开(公告)日：2005-02-17

    申请号：US10807454

    申请日：2004-03-24

    申请人： Yoshihisa Iwata ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Yuui Shimizu

    发明人： Yoshihisa Iwata ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Yuui Shimizu

    IPC分类号： G11C11/15 ,  G11C29/04 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C11/00

    CPC分类号： G11C11/15

    摘要： A semiconductor memory device comprises word lines, bit lines, memory cells, a row decoder, a column decoder, and a write circuit. The word lines are formed along a first direction. The bit lines are formed along a second direction. Memory cells include magneto-resistive elements and are arranged at intersections of the word lines and the bit lines. The row decoder selects at least one of the word lines. The column decoder selects at least one of the bit lines. The write circuit supplies first and second write currents to a selected word line and selected bit line respectively and writes data into a selected memory cell arranged at the intersection of the selected word line and the selected bit line. The write circuit changes the current values of the first and second write currents according to a temperature change.

    摘要翻译： 半导体存储器件包括字线，位线，存储单元，行解码器，列解码器和写电路。 字线沿着第一方向形成。 位线沿着第二方向形成。 存储单元包括磁阻元件，并且布置在字线和位线的交点处。 行解码器选择至少一个字线。 列解码器选择至少一个位线。 写入电路分别向所选择的字线和所选位线提供第一和第二写入电流，并将数据写入布置在所选择的字线和所选位线的交点处的选定存储单元。 写入电路根据温度变化改变第一和第二写入电流的电流值。

    Semiconductor memory
    7.
    发明申请
    Semiconductor memory 失效
    半导体存储器

    公开(公告)号：US20060067149A1

    公开(公告)日：2006-03-30

    申请号：US11084037

    申请日：2005-03-21

    申请人： Yuui Shimizu ,  Yoshihisa Iwata ,  Kenji Tsuchida

    发明人： Yuui Shimizu ,  Yoshihisa Iwata ,  Kenji Tsuchida

    IPC分类号： G11C7/02

    CPC分类号： G11C11/16 ,  G11C7/062 ,  G11C7/14

    摘要： A semiconductor memory comprises a memory cell, a pair of reference cells for use in generation of a reference electric potential, a first read circuit which compares a read electric potential obtained from the memory cell with the reference electric potential and determines data in the memory cell, a second read circuit which detects a state of the pair of reference cells and outputs a detection signal indicating the state of the pair of reference cells, and a control circuit which controls a write operation for the pair of reference cells based on the detection signal.

    摘要翻译： 半导体存储器包括存储单元，用于产生参考电位的一对参考单元，将从存储单元获得的读电位与参考电位进行比较的第一读电路，并确定存储单元中的数据 第二读取电路，其检测所述一对参考单元的状态，并输出指示所述一对参考单元的状态的检测信号;以及控制电路，其基于所述检测信号来控制所述一对参考单元的写入操作 。

    Magnetic random access memory
    8.
    发明申请
    Magnetic random access memory 失效
    磁性随机存取存储器

    公开(公告)号：US20060279982A1

    公开(公告)日：2006-12-14

    申请号：US11217296

    申请日：2005-09-02

    申请人： Yuui Shimizu ,  Yoshihisa Iwata

    发明人： Yuui Shimizu ,  Yoshihisa Iwata

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16 ,  G11C5/025 ,  G11C5/063

    摘要： A magnetic random access memory includes memory cells which store information using an internal magnetization direction. A first write line includes a first extending portion, a second extending portion and a first connection portion. The first extends portion extends along a first direction and has a first end and a second end. The second extending portion extends along the first direction and has a third end facing the first end and a fourth end facing the second end. The first connection portion connects the first end and the third end. A second write line and the first write line sandwiches one of the memory cells. First peripheral circuits are connected to the first connection portion and to at least one of the second end and the fourth end.

    摘要翻译： 磁性随机存取存储器包括使用内部磁化方向存储信息的存储单元。 第一写入线包括第一延伸部分，第二延伸部分和第一连接部分。 第一延伸部分沿着第一方向延伸并且具有第一端部和第二端部。 第二延伸部分沿着第一方向延伸并且具有面向第一端的第三端和面向第二端的第四端。 第一连接部分连接第一端和第三端。 第二个写入行和第一个写入行夹在其中一个存储单元中。 第一外围电路连接到第一连接部分和第二端部和第四端部中的至少一个。

    Magnetic random access memory with interconnected write lines
    9.
    发明授权
    Magnetic random access memory with interconnected write lines 失效
    具有互连写入线的磁性随机存取存储器

    公开(公告)号：US07269045B2

    公开(公告)日：2007-09-11

    申请号：US11217296

    申请日：2005-09-02

    申请人： Yuui Shimizu ,  Yoshihisa Iwata

    发明人： Yuui Shimizu ,  Yoshihisa Iwata

    IPC分类号： G11C5/06

    CPC分类号： G11C11/16 ,  G11C5/025 ,  G11C5/063

    摘要： A magnetic random access memory includes memory cells which store information using an internal magnetization direction. A first write line includes a first extending portion, a second extending portion and a first connection portion. The first extends portion extends along a first direction and has a first end and a second end. The second extending portion extends along the first direction and has a third end facing the first end and a fourth end facing the second end. The first connection portion connects the first end and the third end. A second write line and the first write line sandwiches one of the memory cells. First peripheral circuits are connected to the first connection portion and to at least one of the second end and the fourth end.

    摘要翻译： 磁性随机存取存储器包括使用内部磁化方向存储信息的存储单元。 第一写入线包括第一延伸部分，第二延伸部分和第一连接部分。 第一延伸部分沿着第一方向延伸并且具有第一端部和第二端部。 第二延伸部分沿着第一方向延伸并且具有面向第一端的第三端和面向第二端的第四端。 第一连接部分连接第一端和第三端。 第二个写入行和第一个写入行夹在其中一个存储单元中。 第一外围电路连接到第一连接部分和第二端部和第四端部中的至少一个。

    Semiconductor memory
    10.
    发明授权
    Semiconductor memory 失效

    公开(公告)号：US07116598B2

    公开(公告)日：2006-10-03

    申请号：US11084037

    申请日：2005-03-21

    申请人： Yuui Shimizu ,  Yoshihisa Iwata ,  Kenji Tsuchida

    发明人： Yuui Shimizu ,  Yoshihisa Iwata ,  Kenji Tsuchida

    IPC分类号： G11C7/02

    CPC分类号： G11C11/16 ,  G11C7/062 ,  G11C7/14

    摘要： A semiconductor memory comprises a memory cell, a pair of reference cells for use in generation of a reference electric potential, a first read circuit which compares a read electric potential obtained from the memory cell with the reference electric potential and determines data in the memory cell, a second read circuit which detects a state of the pair of reference cells and outputs a detection signal indicating the state of the pair of reference cells, and a control circuit which controls a write operation for the pair of reference cells based on the detection signal.