公开(公告)号：USD715899S1

公开(公告)日：2014-10-21

申请号：US29472213

申请日：2013-11-11

申请人： Yoshihiro Fukano ,  Makoto Nomura ,  Shinya Yamasaki

设计人： Yoshihiro Fukano ,  Makoto Nomura ,  Shinya Yamasaki

公开(公告)号：US08420549B2

公开(公告)日：2013-04-16

申请号：US12954207

申请日：2010-11-24

申请人： Shinya Yamasaki ,  Hidemitsu Aoki

发明人： Shinya Yamasaki ,  Hidemitsu Aoki

IPC分类号： H01L21/306

CPC分类号： C23F1/26 ,  B08B3/02 ,  C23F1/08 ,  C23F1/18 ,  C23G3/00 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67023 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/68707

摘要： A method of manufacturing a semiconductor device includes preparing a semiconductor wafer having a device area, an end face, and a surface peripheral area located outside the device area and between the end face and the device area. Forming a Cu layer on the semiconductor wafer and rotating the wafer in a horizontal plane. Emitting a first liquid from an edge nozzle towards the surface peripheral area which selectively removes a first unnecessary material in the surface peripheral area. Emitting a protecting liquid toward the semiconductor wafer, thereby protecting the device area from the first liquid. An angle of a longitudinal axis of the edge nozzle with respect to a tangent of the semiconductor wafer at a point, where the longitudinal axis of the edge nozzle intersects the end face of the wafer, is set in the range of 0 to 90 degrees in plan view.

摘要翻译： 制造半导体器件的方法包括制备具有位于器件区域外部以及端面与器件区域之间的器件区域，端面和表面周边区域的半导体晶片。 在半导体晶片上形成Cu层并在水平面上旋转晶片。 从边缘喷嘴朝向表面周边区域发射第一液体，其选择性地去除表面周边区域中的第一不需要的材料。 向半导体晶片发射保护液体，从而保护装置区域免受第一液体的影响。 边缘喷嘴的纵向轴线相对于半导体晶片的切线在边缘喷嘴的纵向轴线与晶片的端面相交的点处的角度设定在0至90度的范围内 平面图。

公开(公告)号：US20070299575A1

公开(公告)日：2007-12-27

申请号：US11808624

申请日：2007-06-12

申请人： Hideyuki Yamada ,  Hiroyuki Takahashi ,  Shinya Yamasaki

发明人： Hideyuki Yamada ,  Hiroyuki Takahashi ,  Shinya Yamasaki

IPC分类号： G01M17/00

CPC分类号： G06Q10/20 ,  G07C5/008

摘要： A remote troubleshooting system comprises a vehicle that transmits vehicle data regarding a stress factor of a specific onboard component at a specified timing, and a troubleshooting server that is connected to the vehicle via a network, receives the vehicle data from the vehicle, and performs the troubleshooting of the onboard component. The server determines a precaution level based on the vehicle data from the vehicle, selects a troubleshooting program that is suitable to the precaution level determined, and transmits this to the vehicle. The vehicle replaces the troubleshooting program currently stored by a memory with the troubleshooting program received. Thereby, the reliability of the troubleshooting can be improved.

摘要翻译： 远程故障排除系统包括：车辆，其在指定时刻传送关于特定车载部件的应力因素的车辆数据，以及经由网络连接到车辆的故障排除服务器，从车辆接收车辆数据， 车载组件故障排除。 服务器根据来自车辆的车辆数据确定预防级别，选择适合于所确定的预防级别的故障排除程序，并将其发送给车辆。 车辆将故障排除程序接收到的内存替换当前存储的故障排除程序。 从而可以提高故障排除的可靠性。

公开(公告)号：US06225217B1

公开(公告)日：2001-05-01

申请号：US09439809

申请日：1999-11-12

申请人： Tatsuya Usami ,  Hidemitsu Aoki ,  Yasuaki Tsuchiya ,  Shinya Yamasaki

发明人： Tatsuya Usami ,  Hidemitsu Aoki ,  Yasuaki Tsuchiya ,  Shinya Yamasaki

IPC分类号： H01L214753

CPC分类号： H01L21/022 ,  H01L21/0212 ,  H01L21/02134 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/0332 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3124 ,  H01L21/3205 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76813

摘要： A first insulating film with a dielectric constant lower than that of a silicon oxide film is formed on a semiconductor substrate. Next, a metal film or a second insulating film, which has degrees of moisture absorption and deformation in an oxygen plasma process and exposure to a resist releasing solution equal to or less than those of a silicon oxide film, is formed on the first insulating film. Then, the metal film or the second insulating film is patterned to a prescribed pattern. An opening is formed in the first insulating film using the metal film or the second insulating film as a mask.

摘要翻译： 在半导体衬底上形成介电常数比氧化硅膜低的第一绝缘膜。 接着，在第一绝缘膜上形成金氧膜或第二绝缘膜，其在氧等离子体处理中具有湿度吸收和变形程度，并且暴露于等于或小于氧化硅膜的抗蚀剂释放溶液 。 然后，将金属膜或第二绝缘膜图案化为规定的图案。 使用金属膜或第二绝缘膜作为掩模在第一绝缘膜中形成开口。

公开(公告)号：US07862658B2

公开(公告)日：2011-01-04

申请号：US11144692

申请日：2005-06-06

申请人： Shinya Yamasaki ,  Hidemitsu Aoki

发明人： Shinya Yamasaki ,  Hidemitsu Aoki

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： C23F1/26 ,  B08B3/02 ,  C23F1/08 ,  C23F1/18 ,  C23G3/00 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67023 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/68707

摘要： An etching/cleaning apparatus is provided, which makes it possible to effectively remove an unnecessary material or materials existing on a semiconductor wafer without damaging the device area with good controllability. The apparatus comprises (a) a rotating means for holding a semiconductor wafer and for rotating the wafer in a horizontal plane; the wafer having a device area and a surface peripheral area on its surface; the surface peripheral area being located outside the device area; and (b) an edge nozzle for emitting an etching/cleaning liquid toward a surface peripheral area of the wafer. The etching/cleaning liquid emitted from the edge nozzle selectively removes an unnecessary material existing in the surface peripheral area. The etching/cleaning liquid emitted from the edge nozzle preferably has an emission direction oriented along a rotation direction of the wafer or outward with respect to a tangent of the wafer formed near a contact point of the liquid with the surface peripheral area of the wafer. A back nozzle may be additionally provided to emit an etching/cleaning liquid toward a back center of the wafer. A surface nozzle may be additionally provided to emit a protecting liquid toward a surface center of the wafer, covering the device area to protect the same against the etching/cleaning liquid.

摘要翻译： 提供了一种蚀刻/清洁装置，这使得可以有效地去除存在于半导体晶片上的不需要的材料或材料，而不会损害具有良好可控性的装置区域。 该装置包括：（a）用于保持半导体晶片并用于在水平面内旋转晶片的旋转装置; 所述晶片在其表面上具有器件面积和表面周边区域; 表面周边区域位于装置区域外部; 和（b）用于向晶片的表面周边区域喷射蚀刻/清洗液体的边缘喷嘴。 从边缘喷嘴排出的蚀刻/清洗液选择性地去除表面周边区域中存在的不需要的材料。 从边缘喷嘴排出的蚀刻/清洗液优选具有沿着晶片的旋转方向取向的发射方向或者相对于在液晶与晶片的表面周边区域的接触点附近形成的晶片的切线。 可以另外设置背喷嘴以朝向晶片的后中心发射蚀刻/清洁液体。 可以另外设置表面喷嘴以朝向晶片的表面中心发射保护液体，覆盖设备区域以保护其免受蚀刻/清洁液体的影响。

公开(公告)号：US20070225195A1

公开(公告)日：2007-09-27

申请号：US10593615

申请日：2005-03-10

申请人： Yoshinobu Saito ,  Daiji Nagahama ,  Shinya Yamasaki ,  Takahiro Okuda ,  Tetsuo Nishina

发明人： Yoshinobu Saito ,  Daiji Nagahama ,  Shinya Yamasaki ,  Takahiro Okuda ,  Tetsuo Nishina

IPC分类号： C11D9/30

CPC分类号： A61K8/361 ,  A61K8/41 ,  A61K8/894 ,  A61Q19/10 ,  C11D1/04 ,  C11D1/667 ,  C11D1/74 ,  C11D3/30 ,  C11D3/3738 ,  C11D9/225 ,  C11D9/30 ,  C11D9/36 ,  C11D10/045

摘要： The present invention provides a solid soap composition comprising: a soap component (a); polyoxyalkylene-modified polysiloxane (b) that is expressed by formula (1) below, (where, R1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, m represents an integer of 1 to 60, n represents an integer of 1 to 60, a represents an integer of 1 to 10, b represents an integer of 1 to 30, and c represents an integer of 0 to 30); and tetrakis (2-hydroxyalkyl) ethylene diamine (c) that is expressed by formula (2) below, (where, R2 to R5 are the same or different and each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms), as essential components. According to the present invention, it is possible to provide a cleaning agent capable of performing makeup removal and ordinary facial cleaning at the same time in single facial cleaning, that has sufficient foaming property, that provides a clean feel after cleaning, and that can sufficiently remove not only cosmetic foundations but also acid pigments.

摘要翻译： 本发明提供一种固体皂组合物，其包含：皂组分（a）; 由下式（1）表示的聚氧化烯改性聚硅氧烷（b）（其中，R1表示氢原子或碳原子数1〜5的烷基，m表示1〜60的整数，n表示 1〜60，a表示1〜10的整数，b表示1〜30的整数，c表示0〜30的整数）。 和由下式（2）表示的四（2-羟基烷基）乙二胺（c）（其中，R 2至R 5相同或不同，各自独立地表示氢原子或具有1至5个碳原子的烷基 ）作为必要的组成部分。 根据本发明，可以提供一种能够在单面洗涤中同时进行化妆去除和普通面部清洁的清洁剂，其具有足够的发泡性能，其在清洁后提供清洁的手感，并且可以充分地 不仅可以除去化妆品基质，还可以除去酸性颜料。

公开(公告)号：US06833109B1

公开(公告)日：2004-12-21

申请号：US09534296

申请日：2000-03-23

申请人： Hidemitsu Aoki ,  Shinya Yamasaki

发明人： Hidemitsu Aoki ,  Shinya Yamasaki

IPC分类号： B01J1900

CPC分类号： H01L21/02074 ,  H01L21/67057 ,  Y10S134/902

摘要： In an apparatus, after completion of a CMP (i.e., chemical mechanical polishing) operation of a semiconductor wafer, the thus polished wafer is temporarily stored in a water tank before it is subjected to a post-CMP cleaning operation. During its storage period in the water tank, the wafer is prevented from being chemically attacked by an oxidizing agent contained in an abrasive used in the CMP operation. The apparatus includes: the water tank for storing the wafer therein; a pure water supply pipe for supplying pure water to the water tank; an anticorrosion agent supply pipe for supplying an anticorrosion agent to the pure water; a drain pipe connected with a lower portion of the water tank to discharge the water from the water tank; a return pipe for returning the discharged water to an upper portion of the water tank through a pump and a filter, the return pipe branching-off from the drain pipe; and, valves mounted on these pipes. The water tank is filled with pure water, to which an anticorrosion agent (i.e., benzotriazole) is added to prepare a solution in which the wafer is immersed after polishing.

摘要翻译： 在设备中，在完成半导体晶片的CMP（即化学机械抛光）操作之后，将这样抛光的晶片在进行后CMP清洗操作之前暂时储存在水箱中。 在水箱中的储存期间，防止晶片被包含在CMP操作中使用的磨料中的氧化剂所化学侵蚀。 该装置包括：用于将晶片存储在其中的水箱; 用于向水箱供应纯水的纯净水供水管; 用于向纯水供应防腐剂的防腐剂供给管; 与水箱的下部连接的排水管，以从水箱排出水; 用于通过泵和过滤器将排出的水返回到水箱的上部的回流管，该回流管从排水管分支; 和安装在这些管道上的阀。 水箱装满纯水，加入防腐剂（即苯并三唑）以制备抛光后晶片浸入的溶液。

公开(公告)号：US06683007B1

公开(公告)日：2004-01-27

申请号：US09525445

申请日：2000-03-14

申请人： Shinya Yamasaki ,  Hidemitsu Aoki

发明人： Shinya Yamasaki ,  Hidemitsu Aoki

IPC分类号： H01L21302

CPC分类号： C23F1/26 ,  B08B3/02 ,  C23F1/08 ,  C23F1/18 ,  C23G3/00 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67023 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/68707

摘要： An etching/cleaning method makes it possible to effectively remove unnecessary materials on a semiconductor wafer, having a surface peripheral area and a surface device area, without damaging the device area. The semiconductor is rotated in a horizontal plane while an etching/cleaning liquid is emitted by an edge nozzle toward the surface peripheral area, thereby selectively etching an unnecessary material in the surface peripheral area. The etching/cleaning liquid emitted from the edge nozzle preferably has an emission direction oriented along a rotation direction of the wafer or outward with respect to a tangent of the wafer formed near a contact point of the liquid with the surface peripheral area of the wafer.

摘要翻译： 蚀刻/清洁方法使得可以有效地去除具有表面周边区域和表面装置区域的半导体晶片上的不必要的材料，而不会损坏器件面积。 半导体在水平面上旋转，同时通过边缘喷嘴向表面周边区域喷射蚀刻/清洗液体，从而选择性地蚀刻表面周边区域中的不需要的材料。 从边缘喷嘴排出的蚀刻/清洗液优选具有沿着晶片的旋转方向取向的发射方向或者相对于在液晶与晶片的表面周边区域的接触点附近形成的晶片的切线。

公开(公告)号：US6140225A

公开(公告)日：2000-10-31

申请号：US104714

申请日：1998-06-25

申请人： Tatsuya Usami ,  Hidemitsu Aoki ,  Yasuaki Tsuchiya ,  Shinya Yamasaki

发明人： Tatsuya Usami ,  Hidemitsu Aoki ,  Yasuaki Tsuchiya ,  Shinya Yamasaki

IPC分类号： H01L21/302 ,  H01L21/033 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/312 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4753 ,  H01L21/461

CPC分类号： H01L21/32139 ,  H01L21/0332 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3205 ,  H01L21/32136 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/3124

摘要： A first insulating film with a dielectric constant lower than that of a silicon oxide film is formed on a semiconductor substrate. Next, a second insulating film, which has degrees of moisture absorption and deformation in an oxygen plasma process and exposure to a resist releasing solution equal to or less than those of a silicon oxide film, is formed on the first insulating film. Then, a third insulating film, which has degrees of moisture absorption and deformation in an oxygen plasma process and exposure to a resist releasing solution equal to or less than those of a silicon oxide film are formed on the second insulating film. Thereafter, the third insulating film is patterned to a prescribed pattern. An opening is formed in the first and second insulating films using the third insulating film as a mask.

摘要翻译： 在半导体衬底上形成介电常数比氧化硅膜低的第一绝缘膜。 接下来，在第一绝缘膜上形成第二绝缘膜，其在氧等离子体处理中具有吸湿变形程度，并且暴露于等于或小于氧化硅膜的抗蚀剂释放溶液。 然后，在第二绝缘膜上形成第三绝缘膜，其在氧等离子体处理中具有吸湿变形程度，并且暴露于等于或小于氧化硅膜的抗蚀剂释放溶液。 此后，将第三绝缘膜图案化为规定的图案。 使用第三绝缘膜作为掩模在第一绝缘膜和第二绝缘膜中形成开口。

公开(公告)号：US20130235097A1

公开(公告)日：2013-09-12

申请号：US13989380

申请日：2011-11-17

申请人： Makoto Eguchi ,  Shinya Yamasaki ,  Akira Imai ,  Tomoo Takatani

发明人： Makoto Eguchi ,  Shinya Yamasaki ,  Akira Imai ,  Tomoo Takatani

IPC分类号： G09G5/14

CPC分类号： G09G5/14 ,  G02B27/2214 ,  G02B27/26 ,  G03B35/24 ,  G09G2300/0439 ,  H04N13/31 ,  H04N13/324

摘要： A stereoscopic display device includes: a parallax barrier in which light transmission parts that transmit light and light shielding parts that block light are formed alternately, and a display panel that displays a stereoscopic image. A plurality of pixels for displaying the stereoscopic image are formed on the display panel. Each pixel includes a plurality of color forming subpixels that contribute to the color formation of the stereoscopic image, and a contrasting subpixel that contributes to the contrast of the stereoscopic image. In each pixel, the contrasting subpixel is positioned at both ends of the pixel in a direction in which the light transmission parts and the light shielding parts are arranged alternately. In each pixel that overlaps the light shielding part when the display panel is viewed from front, the contrasting subpixel is positioned at both ends of the light shielding part.

摘要翻译： 立体显示装置包括：交替形成透光遮光部的遮光部的透光部以及显示立体图像的显示面板的视差屏障。 在显示面板上形成用于显示立体图像的多个像素。 每个像素包括有助于立体图像的颜色形成的多个成色子像素和有助于立体图像的对比度的对比子像素。 在每个像素中，对比子像素位于透光部和遮光部交替配置的方向上的像素的两端。 在从前方观察显示面板时与遮光部重叠的各像素中，对比亚像素位于遮光部的两端。