Large-area imager with direct digital pixel output
    2.
    发明申请
    Large-area imager with direct digital pixel output 有权
    大面积成像器具有直接数字像素输出

    公开(公告)号:US20040017494A1

    公开(公告)日:2004-01-29

    申请号:US10206743

    申请日:2002-07-26

    CPC classification number: H04N5/378 H04N5/3742 H04N5/37455

    Abstract: An imager circuit includes an array of pixels, each pixel including a sensor (photodiode) connected to an input terminal of a comparator. The comparators of each pixel row have output terminals connected to a latch. A counter generates a sequence of digital values that are transmitted to a digital-to-analog converter (DAC) and to the latch of each row. The DAC generates a ramp voltage that is transmitted to a second input terminal of each pixel's comparator. The comparators of a selected pixel column are enabled to generate output signals when the ramp voltage equals each pixel's voltage, causing the associated latches to capture the current digital values. The comparators are formed such that each pixel row shares a cascode mirror circuit that detects differential currents in data line pairs connected to each pixel in that row.

    Abstract translation: 成像器电路包括像素阵列,每个像素包括连接到比较器的输入端的传感器(光电二极管)。 每个像素行的比较器具有连接到锁存器的输出端子。 计数器产生被发送到数模转换器(DAC)和每行的锁存器的数字值序列。 DAC产生斜波电压,该斜坡电压被传输到每个像素的比较器的第二输入端。 当斜坡电压等于每个像素的电压时,所选像素列的比较器被使能以产生输出信号,导致相关联的锁存器捕获当前的数字值。 比较器形成为使得每个像素行共享一个共源共栅反射镜电路,其检测连接到该行中的每个像素的数据线对中的差分电流。

    Thin phosphorus nitride film as an n-type doping source used in laser doping technology
    4.
    发明申请
    Thin phosphorus nitride film as an n-type doping source used in laser doping technology 有权
    薄磷氮化膜作为激光掺杂技术中使用的n型掺杂源

    公开(公告)号:US20030067037A1

    公开(公告)日:2003-04-10

    申请号:US10282265

    申请日:2002-10-28

    CPC classification number: H01L29/66765 H01L21/2254 H01L29/78669

    Abstract: An improved method and system for laser doping a semiconductor material is described. In the invention, phosphorous nitride is used as a dopant source. The phosphorous nitride is brought into close proximity with a region of the semiconductor to be doped. A pulse of laser light decomposes the phosphorous nitride and briefly melts the region of semiconductor to be doped to allow incorporation of dopant atoms from the phosphorous nitride into the semiconductor.

    Abstract translation: 描述了用于激光掺杂半导体材料的改进的方法和系统。 在本发明中,使用氮化磷作为掺杂剂源。 使磷氮化物与要掺杂的半导体的区域紧密接近。 激光的脉冲分解氮化亚氮,并且短暂熔化要掺杂的半导体的区域,以允许将掺杂剂原子从氮化磷引入到半导体中。

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