Thin phosphorus nitride film as an n-type doping source used in laser doping technology
    2.
    发明申请
    Thin phosphorus nitride film as an n-type doping source used in laser doping technology 有权
    薄磷氮化膜作为激光掺杂技术中使用的n型掺杂源

    公开(公告)号:US20030067037A1

    公开(公告)日:2003-04-10

    申请号:US10282265

    申请日:2002-10-28

    CPC classification number: H01L29/66765 H01L21/2254 H01L29/78669

    Abstract: An improved method and system for laser doping a semiconductor material is described. In the invention, phosphorous nitride is used as a dopant source. The phosphorous nitride is brought into close proximity with a region of the semiconductor to be doped. A pulse of laser light decomposes the phosphorous nitride and briefly melts the region of semiconductor to be doped to allow incorporation of dopant atoms from the phosphorous nitride into the semiconductor.

    Abstract translation: 描述了用于激光掺杂半导体材料的改进的方法和系统。 在本发明中,使用氮化磷作为掺杂剂源。 使磷氮化物与要掺杂的半导体的区域紧密接近。 激光的脉冲分解氮化亚氮,并且短暂熔化要掺杂的半导体的区域,以允许将掺杂剂原子从氮化磷引入到半导体中。

    Low data line capacitance image sensor array using air-gap metal crossover
    3.
    发明申请
    Low data line capacitance image sensor array using air-gap metal crossover 失效
    低数据线电容图像传感器阵列使用气隙金属交叉

    公开(公告)号:US20030001222A1

    公开(公告)日:2003-01-02

    申请号:US09898321

    申请日:2001-07-02

    Abstract: The signal-to-noise ratio of amorphous silicon (a-Si:H) image sensor arrays is limited by electronic noise, which is largely due to data line capacitance. To reduce data line capacitance, an air-gap (i.e., vacuum or gas-filled space) is produced at crossover points separating the data lines and gate lines. This air-gap crossover structure is formed by depositing a release material on the gate lines, forming the data lines on the release material, and then removing (etching) the release material such that the data lines form an arch extending over the gate lines. A dielectric material is then applied to strengthen the data line, and the sensor pixels are then formed.

    Abstract translation: 非晶硅(a-Si:H)图像传感器阵列的信噪比受电子噪声限制,这主要是由于数据线电容。 为了减少数据线电容,在分隔数据线和栅极线的交叉点产生气隙(即,真空或气体填充的空间)。 这种气隙交叉结构通过在栅极线上沉积释放材料,在释放材料上形成数据线,然后去除(蚀刻)剥离材料,使得数据线形成在栅极线上延伸的拱形来形成。 然后施加电介质材料以加强数据线,然后形成传感器像素。

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