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公开(公告)号：US20250123521A1
公开(公告)日：2025-04-17
申请号：US18557931
申请日：2023-06-28
Inventor： Fei AI , Shiyu LONG
IPC: G02F1/1339 , G02F1/1333 , G02F1/1335
Abstract: The embodiment of the present application discloses a liquid crystal display panel, the liquid crystal display panel includes a first substrate and a second substrate disposed opposite to each other. A frame sealant and a boss contacting each other are disposed in a frame sealant region, and the frame sealant at least partially overlaps the boss in a film thickness direction. A boss cooperating with the frame sealant to perform a sealing function is disposed in the frame sealant region. The boss reduces a volume of the frame sealant and lowers a time required for curing the frame sealant to improve a productivity.
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公开(公告)号：US20240405033A1
公开(公告)日：2024-12-05
申请号：US18806578
申请日：2024-08-15
Inventor： Fei AI , Jiyue SONG , Dewei SONG
IPC: H01L27/146 , G02F1/1343 , G02F1/1362 , G02F1/1368 , G06F3/041 , G06V40/13
Abstract: An array substrate, a display panel, and an electronic device are provided. The array substrate includes a substrate, a first conductive layer including a first connection part, a fourth insulating layer disposed on the first conductive layer and provided with a second via, and a second conductive layer disposed on the fourth insulating layer and in the second via. The second conductive layer includes a second electrode, and the second electrode is connected to the first connection part through the second via.
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公开(公告)号：US20240331603A1
公开(公告)日：2024-10-03
申请号：US18740677
申请日：2024-06-12
Inventor： Mingyue LI , Chao TIAN , Yanqing GUAN , Fei AI , Guanghui LIU
IPC: G09G3/20
CPC classification number: G09G3/20 , G09G2310/0267 , G09G2310/0283
Abstract: The present application discloses a gate drive circuit and a display device. The gate drive circuit includes a plurality of cascaded gate drive units, in which one of the gate drive units includes a first layout, an input module and a pull-up module. By receiving a potential changeable signal by the gate of a first transistor or the gate of a second thin-film transistor, it can alleviate or avoid current leakage caused when a first node keeps at a same voltage level for a long time, thereby improving the stability of the potential of the first node.
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公开(公告)号：US20240077776A1
公开(公告)日：2024-03-07
申请号：US17289764
申请日：2021-03-17
Inventor： Jiyue SONG , Fei AI
IPC: G02F1/1368 , G02F1/1362 , H01L27/12
CPC classification number: G02F1/1368 , G02F1/136209 , G02F1/136222 , H01L27/124 , H01L27/1288
Abstract: Embodiments of the present disclosure disclose a driving substrate, a display panel, and a manufacturing method of the driving substrate. In the driving substrate, a first electrode is connected to a first thin film transistor; a photosensitive diode includes a first semiconductor layer and an intrinsic semiconductor layer sequentially disposed on the first electrode, the intrinsic semiconductor layer wraps the first semiconductor layer and the first electrode; and a second conductive layer is disposed on the photosensitive diode. The second conductive layer includes a second electrode, and the second electrode covers the photosensitive diode.
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公开(公告)号：US20230354624A1
公开(公告)日：2023-11-02
申请号：US17278694
申请日：2021-02-26
Inventor： Jiyue SONG , Fei AI , Dewei SONG , Fan GONG
CPC classification number: H10K30/80 , H10K39/32 , G06V40/1318
Abstract: An array substrate, a display panel, and a display device are provided by the present application. The array substrate includes a base substrate; a light-sensitive component layer disposed on the base substrate, wherein a plurality of light-sensitive components are disposed at intervals in the light-sensitive component layer; and a first light-shielding layer disposed on the light-sensitive component layer. An orthographic projection of the first light-shielding layer on the base substrate partially overlaps with an orthographic projection of each of the light-sensitive components on the array substrate.
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Patent Agency Ranking
公开(公告)号：US20230274701A1
公开(公告)日：2023-08-31
申请号：US17622633
申请日：2021-12-15
Inventor： Chao TIAN , Yanqing GUAN , Guanghui LIU , Fei AI
IPC: G09G3/3266 , G09G3/36 , G06F3/041
CPC classification number: G09G3/3266 , G09G3/3674 , G06F3/0412 , G06F3/04166 , G06F3/0418 , G09G2310/08 , G09G2354/00
Abstract: A gate driving circuit and a display device are provided. The gate driving circuit includes electrically connected multi-stage driving units. The driving unit of each stage includes an input module, an output module electrically connected with the input module, a pull-down module electrically connected with the output module, and a pull-down control module electrically connected with the pull-down module. The output module is electrically connected to a stage transmission signal output terminal, and the pull-down module is electrically connected to a first control signal terminal.
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公开(公告)号：US20230246036A1
公开(公告)日：2023-08-03
申请号：US16966116
申请日：2020-01-17
Inventor： Yuan YAN , Yong XU , Fei AI , Dewei SONG
CPC classification number: H01L27/124 , G06F3/041 , H01L27/1288 , G06F2203/04103
Abstract: A touch array substrate and a manufacturing method thereof, wherein in the touch array substrate, an active layer, an insulating layer, a pixel electrode layer, a metal layer, a planarization layer, and a common electrode layer are sequentially disposed on the buffer layer. The active layer includes a first region corresponding to a source electrode and a second region corresponding to a drain electrode. The pixel electrode layer includes a plurality of base layers. The metal layer is correspondingly disposed on the base layers. The metal layer includes a touch signal line, a data line, and a gate electrode. The common electrode layer includes a touch electrode, the source electrode, and the drain electrode.
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公开(公告)号：US20230137922A1
公开(公告)日：2023-05-04
申请号：US17287169
申请日：2021-04-14
Inventor： Fan GONG , Fei AI , Jiyue SONG
IPC: H10K59/60 , H10K59/80 , G02F1/1362
Abstract: An array substrate, a manufacturing process of an array substrate, and a display panel are disclosed. The array substrate includes a substrate and a photosensitive element. The photosensitive element is disposed on the substrate and includes a doped semiconductor layer, an intrinsic semiconductor layer, and a transparent electrode layer sequentially stacked. By improving an internal structure of the photosensitive element, light absorption by an incident interface of the intrinsic semiconductor layer can be increased, so that sensitivity of the photosensitive element is enhanced.
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公开(公告)号：US20220122370A1
公开(公告)日：2022-04-21
申请号：US16956962
申请日：2020-04-02
Inventor： Juncheng XIAO , Fei AI , Jiyue SONG
IPC: G06V40/13 , H01L27/146
Abstract: A photo sensor, a manufacturing method thereof, and a display panel are disclosed. By an ion implantation method forming an N-type region and a P-type region on a surface of polycrystalline silicon in a same layer respectively, compatibility with an ion implantation process is ensured, while covering a layer of an amorphous silicon photosensitive layer on the polycrystalline silicon enhances light absorption ability and can increase photo-generated electron-hole pairs. Furthermore, built-in electric fields exist on a horizontal direction and a vertical direction, which can more effectively separate the electron-hole pairs to enhance photo-generated electric current to improve accuracy of fingerprint recognition.
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公开(公告)号：US20250098307A1
公开(公告)日：2025-03-20
申请号：US18567221
申请日：2023-09-26
Inventor： Haiming CAO , Chao TIAN , Shiyu LONG , Chunpeng ZHANG , Fei AI , Chungching HSIEH , Jianfeng YUAN
IPC: H01L27/12 , G02F1/1368 , H01L29/786
Abstract: An array substrate, a display panel, and a display device are provided. The array substrate includes a base; a buffer layer and a thin film transistor. The buffer layer is provided on the base and includes a first buffer layer and a second buffer layer. The first buffer layer is disposed between the second buffer layer and the base. A refractive index of the first buffer layer is greater than a refractive index of the base and a refractive index of the second buffer layer. A ratio of the refractive index of the first buffer layer to the refractive index of the base is less than or equal to 1.25. The thin film transistor is provided on a side of the buffer layer away from the base.
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