公开(公告)号：US20250098307A1

公开(公告)日：2025-03-20

申请号：US18567221

申请日：2023-09-26

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Haiming CAO ,  Chao TIAN ,  Shiyu LONG ,  Chunpeng ZHANG ,  Fei AI ,  Chungching HSIEH ,  Jianfeng YUAN

IPC: H01L27/12 ,  G02F1/1368 ,  H01L29/786

Abstract: An array substrate, a display panel, and a display device are provided. The array substrate includes a base; a buffer layer and a thin film transistor. The buffer layer is provided on the base and includes a first buffer layer and a second buffer layer. The first buffer layer is disposed between the second buffer layer and the base. A refractive index of the first buffer layer is greater than a refractive index of the base and a refractive index of the second buffer layer. A ratio of the refractive index of the first buffer layer to the refractive index of the base is less than or equal to 1.25. The thin film transistor is provided on a side of the buffer layer away from the base.

公开(公告)号：US20230369351A1

公开(公告)日：2023-11-16

申请号：US17780031

申请日：2022-05-23

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Shiyu LONG

IPC: H01L27/12

CPC classification number: H01L27/1244

Abstract: An array substrate, a display panel, and a display terminal are provided. The array substrate includes: a substrate; a first active layer disposed on the substrate; a first metal layer including a source electrode electrically connected to one end of the first active layer and a first gate electrode disposed opposite to the first active layer; a second active layer disposed on the first metal layer and electrically connected to the first active layer, wherein, the first gate electrode is disposed opposite to the second active layer; and a second metal layer including a drain electrode electrically connected to the second active layer.

公开(公告)号：US20240113137A1

公开(公告)日：2024-04-04

申请号：US18458264

申请日：2023-08-30

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Shiyu LONG

IPC: H01L27/12

CPC classification number: H01L27/1248

Abstract: An array substrate includes a substrate, an active layer on the substrate, a first insulating layer on the active layer, a first anti-reflective coating layer on the first insulating layer, a second insulating layer on the first anti-reflective coating layer, a source on the second insulating layer, and a drain on the second insulating layer. The source includes a first electrode portion and a second electrode portion. The drain includes a third electrode portion and fourth electrode portion. An orthographic projection of the second electrode portion or the fourth electrode portion on the substrate overlaps with an orthographic projection of the first anti-reflective coating layer on the substrate.

公开(公告)号：US20240038793A1

公开(公告)日：2024-02-01

申请号：US17278342

申请日：2020-12-31

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Fei AI ,  Fan GONG ,  Jiyue SONG ,  Dewei SONG ,  Shiyu LONG

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/14649 ,  H01L27/14683

Abstract: An array substrate and a manufacturing method thereof are provided. The array substrate includes a thin film transistor layer including a first thin film transistor and an infrared detection element disposed on a first side of the thin film transistor layer. The infrared detection element includes a first electrode, a light-absorbing layer, and a second electrode sequentially stacked, wherein the infrared detection element is electrically connected to the first thin film transistor, and wherein a material of the light-absorbing layer is microcrystalline silicon. A thickness and band gap of the microcrystalline silicon simultaneously fulfill a purpose of infrared detection.

公开(公告)号：US20240038767A1

公开(公告)日：2024-02-01

申请号：US17635804

申请日：2022-02-08

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Shiyu LONG

IPC: H01L27/12

CPC classification number: H01L27/1218

Abstract: An array substrate includes a first substrate and a planarization layer disposed on a side of the first substrate. The planarization layer is provided with a first through hole. A cross-sectional area of the first through hole gradually decreases in a direction from the planarization layer toward the first substrate. An angle between a sidewall of the first through hole and a bottom surface of the first through hole is 50° to 90°.