公开(公告)号：US20120319137A1

公开(公告)日：2012-12-20

申请号：US13599636

申请日：2012-08-30

申请人： Wolfgang Klein ,  Hans Taddiken ,  Winfried Bakalski

发明人： Wolfgang Klein ,  Hans Taddiken ,  Winfried Bakalski

IPC分类号： H01L29/73 ,  H01L29/16 ,  H01L21/331 ,  H01L29/12 ,  H01L29/20

CPC分类号： H01L23/60 ,  H01L27/0259 ,  H01L29/861 ,  H01L29/8618 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrostatic discharge (ESD) protection element includes a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type.

摘要翻译： 静电放电（ESD）保护元件包括集电区域，第一阻挡区域，半导体区域，第二阻挡区域和发射极区域。 集电区具有第一导电类型。 第一屏障区域与集电区域相邻，具有第二导电类型。 半导体区域与第一屏障区域相邻并且是本征半导体区域，或者具有低于第一阻挡区域的掺杂剂浓度的第一或第二导电类型和掺杂剂浓度。 第二阻挡区域与半导体区域相邻并且具有比半导体区域更高的第二导电类型和更高的掺杂剂浓度。 发射极区域与第二阻挡区域相邻并且具有第一导电类型。

公开(公告)号：US20110026174A1

公开(公告)日：2011-02-03

申请号：US12533919

申请日：2009-07-31

申请人： Wolfgang Klein ,  Hans Taddiken ,  Winfried Bakalski

发明人： Wolfgang Klein ,  Hans Taddiken ,  Winfried Bakalski

IPC分类号： H02H9/04 ,  H01L29/12 ,  H01L29/73 ,  H01L21/331

CPC分类号： H01L23/60 ,  H01L27/0259 ,  H01L29/861 ,  H01L29/8618 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrostatic discharge (ESD) protection element is described, the ESD protection element including a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type.

摘要翻译： 描述了静电放电（ESD）保护元件，ESD保护元件包括集电极区域，第一阻挡区域，半导体区域，第二阻挡区域和发射极区域。 集电区具有第一导电类型。 第一屏障区域与集电区域相邻，具有第二导电类型。 半导体区域与第一屏障区域相邻并且是本征半导体区域，或者具有低于第一阻挡区域的掺杂剂浓度的第一或第二导电类型和掺杂剂浓度。 第二阻挡区域与半导体区域相邻并且具有比半导体区域更高的第二导电类型和更高的掺杂剂浓度。 发射极区域与第二阻挡区域相邻并且具有第一导电类型。

公开(公告)号：US08530968B2

公开(公告)日：2013-09-10

申请号：US13599636

申请日：2012-08-30

申请人： Wolfgang Klein ,  Hans Taddiken ,  Winfried Bakalski

发明人： Wolfgang Klein ,  Hans Taddiken ,  Winfried Bakalski

IPC分类号： H01L23/62

CPC分类号： H01L23/60 ,  H01L27/0259 ,  H01L29/861 ,  H01L29/8618 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrostatic discharge (ESD) protection element includes a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type.

公开(公告)号：US08270131B2

公开(公告)日：2012-09-18

申请号：US12533919

申请日：2009-07-31

申请人： Wolfgang Klein ,  Hans Taddiken ,  Winfried Bakalski

发明人： Wolfgang Klein ,  Hans Taddiken ,  Winfried Bakalski

IPC分类号： H02H9/00

CPC分类号： H01L23/60 ,  H01L27/0259 ,  H01L29/861 ,  H01L29/8618 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrostatic discharge (ESD) protection element is described, the ESD protection element including a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type.

摘要翻译： 描述了静电放电（ESD）保护元件，ESD保护元件包括集电极区域，第一阻挡区域，半导体区域，第二阻挡区域和发射极区域。 集电区具有第一导电类型。 第一屏障区域与集电区域相邻，具有第二导电类型。 半导体区域与第一屏障区域相邻并且是本征半导体区域，或者具有低于第一阻挡区域的掺杂剂浓度的第一或第二导电类型和掺杂剂浓度。 第二阻挡区域与半导体区域相邻并且具有比半导体区域更高的第二导电类型和更高的掺杂剂浓度。 发射极区域与第二阻挡区域相邻并且具有第一导电类型。

公开(公告)号：US08168002B2

公开(公告)日：2012-05-01

申请号：US11996640

申请日：2005-07-27

申请人： Stefan Hein ,  Wolfgang Klein

发明人： Stefan Hein ,  Wolfgang Klein

IPC分类号： C23C16/00

CPC分类号： C23C14/26

摘要： The invention relates to a vacuum treatment plant comprising an evaporator (1) for vacuum coating facilities. The evaporator (1) according to the invention comprises a device for guiding a supply line (4) movable in a gripping direction (A) and intended for gripping and positioning an evaporation boat (3) having a base (22) and further comprises two spacers (18, 19) which the movable supply line (4) flexibly connects to the base (22), with the spacers (18, 19) being disposed on one side each with the movable supply line (4) and with the other side on the base (22), thus enabling the first supply line (4) to be forcibly guided, and with the spacers (18, 19) having such a length and configuration between the first supply line (4) and the base (22) that the guidance direction (B) is essentially parallel to the gripping direction (A) at least across a small deflection range of the spacers (18, 19).

摘要翻译： 本发明涉及一种真空处理设备，其包括用于真空涂装设备的蒸发器（1）。 根据本发明的蒸发器（1）包括用于引导可沿夹紧方向（A）移动并用于夹持和定位具有底座（22）的蒸发舟皿（3）的供应管线（4）的装置，并且还包括两个 可移动供应管线（4）柔性地连接到基座（22）的间隔件（18,19），其中间隔件（18,19）在一侧设置有各自的可动供应管线（4），另一侧 在基座（22）上，从而能够强制地引导第一供应管线（4），并且在第一供应管线（4）和基座（22）之间具有这种长度和结构的间隔件（18,19） 导向方向（B）至少在间隔件（18,19）的小的偏转范围上基本上平行于夹紧方向（A）。

公开(公告)号：US20100007027A1

公开(公告)日：2010-01-14

申请号：US12562475

申请日：2009-09-18

申请人： Stephen Drexl ,  Thomas Goebel ,  Johann Helneder ,  Martina Hommel ,  Wolfgang Klein ,  Heinrich Körner ,  Andrea Mitchell ,  Markus Schwerd ,  Martin Seck

发明人： Stephen Drexl ,  Thomas Goebel ,  Johann Helneder ,  Martina Hommel ,  Wolfgang Klein ,  Heinrich Körner ,  Andrea Mitchell ,  Markus Schwerd ,  Martin Seck

IPC分类号： H01L23/528

CPC分类号： H01L24/05 ,  H01L23/53228 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2224/45099

摘要： A connection arrangement having an outer conductive structure arranged at least partly or completely in a cutout of an electrical insulation layer is provided. An inner conductive structure is arranged at the bottom of the cutout on one side of the insulation layer. The inner conductive structure adjoins the outer conductive structure in a contact zone. A contact area is arranged at the outer conductive structure on the other side of the cutout. The contact zone and the contact area do not overlap. The bottom of the cutout is arranged to overlaps at least half of the contact area, to provide a step in the insulation layer at the edge of the cutout outside a main current path between the contact area and the inner conductive structure.

摘要翻译： 提供一种具有至少部分或全部布置在电绝缘层的切口中的外部导电结构的连接装置。 内导电结构设置在绝缘层一侧的切口的底部。 内部导电结构在接触区域中邻接外部导电结构。 接触区域设置在切口的另一侧的外部导电结构。 接触区域和接触区域不重叠。 切口的底部布置成与接触区域的至少一半重叠，以在接触区域和内部导电结构之间的主电流路径外侧的切口的边缘处的绝缘层中提供台阶。

公开(公告)号：US20090114986A1

公开(公告)日：2009-05-07

申请号：US12349952

申请日：2009-01-07

申请人： Franz Hirler ,  Walter Rieger ,  Thorsten Meyer ,  Wolfgang Klein ,  Frank Pfirsch

发明人： Franz Hirler ,  Walter Rieger ,  Thorsten Meyer ,  Wolfgang Klein ,  Frank Pfirsch

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L27/04 ,  H01L27/0727 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/404 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/732 ,  H01L29/735 ,  H01L29/7803 ,  H01L29/7808 ,  H01L29/861

摘要： A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.

摘要翻译： 具有半导体本体的场板沟槽晶体管。 在一个实施例中，半导体具有沟槽结构和嵌入沟槽结构中的电极结构。 电极结构通过绝缘结构与半导体本体电绝缘并具有栅电极结构和场电极结构。 场板沟槽晶体管具有分压器，其被配置为使得场电极结构被设置为位于源极和漏极之间的电位。

公开(公告)号：US07528680B2

公开(公告)日：2009-05-05

申请号：US11657397

申请日：2007-01-24

申请人： Herbert Kebinger ,  Wolfgang Klein

发明人： Herbert Kebinger ,  Wolfgang Klein

IPC分类号： H03H7/00

CPC分类号： H03H1/0007 ,  H03H7/09

摘要： An electrical filter has at least four terminals, two inductances and two capacitors. The first inductance is connected between the first terminal and the second terminal, and a second inductance is connected between the third terminal and the fourth terminal. The first capacitance is connected between the first terminal and a reference potential, and the second capacitance is connected between the third terminal and the reference potential. The first inductance and the second inductance form a transformer having a coupling coefficient of a magnitude such that the filter acts as a low-pass filter for differential signals and common mode signals, a cutoff frequency for differential signals being higher than a cutoff frequency for common mode signals.

摘要翻译： 电滤波器至少有四个端子，两个电感和两个电容。 第一电感连接在第一端子和第二端子之间，第二电感连接在第三端子和第四端子之间。 第一电容连接在第一端子和参考电位之间，第二电容连接在第三端子和参考电位之间。 第一电感和第二电感形成具有大小的耦合系数的变压器，使得滤波器用作差分信号和共模信号的低通滤波器，差分信号的截止频率高于常见的截止频率 模式信号。

公开(公告)号：US20070216133A1

公开(公告)日：2007-09-20

申请号：US11635426

申请日：2006-12-07

申请人： Wolfgang Klein ,  Andreas Hein ,  Michael Matheisl

发明人： Wolfgang Klein ,  Andreas Hein ,  Michael Matheisl

IPC分类号： B62D53/00 ,  B60P3/022

CPC分类号： B66B31/00

摘要： A transportation system cradle cradles and moves a transportation system structure of a transportation system in an assembly process. The transportation system cradle contains a drive unit connectable to the transportation system structure to move or transport the transportation system structure. The transportation system cradle also has at least one first and second cradle units that are designed to cradle a first or second foot area of the transportation system structure. Intermediate products, formed of a transportation system structure and a cradle, may be moved between assembly stations in an assembly plant.

摘要翻译： 运输系统支架在装配过程中摇摆和移动运输系统的运输系统结构。 运输系统支架包含可连接到运输系统结构的驱动单元，用于移动或运输运输系统结构。 运输系统支架还具有至少一个第一和第二支架单元，其被设计成支撑运输系统结构的第一或第二脚部区域。 由运输系统结构和支架形成的中间产品可以在装配工厂中的组装工位之间移动。

公开(公告)号：US07001806B2

公开(公告)日：2006-02-21

申请号：US10780276

申请日：2004-02-17

申请人： Armin Tilke ,  Wolfgang Klein

发明人： Armin Tilke ,  Wolfgang Klein

IPC分类号： H01L21/8238

CPC分类号： H01L21/8222 ,  H01L27/0825 ,  H01L29/0821 ,  H01L29/732

摘要： A semiconductor structure comprises a buried first semiconductor layer of a first doping type, a second semiconductor layer of the first doping type on the buried semiconductor layer, which is less doped than the buried first semiconductor layer, a semiconductor area of a second doping type on the second semiconductor layer, so that a pn junction is formed between the semiconductor area and the second semiconductor layer, and a recess present below the semiconductor area in the buried first semiconductor layer, which comprises a semiconductor material of the first doping type, which can be less doped than the buried first semiconductor layer and has a larger distance to the semiconductor area of the second doping type on the second semiconductor layer, such that the breakdown voltage across the pn junction is higher than if the recess were not provided. Thereby, it is achieved that both a semiconductor structure with a desired breakdown voltage as well as a further semiconductor structure without this recess can be generated in the buried first semiconductor layer with optimized HF properties.

摘要翻译： 半导体结构包括第一掺杂类型的掩埋的第一半导体层，在掩埋半导体层上的第一掺杂类型的第二半导体层，其比掩埋的第一半导体层掺杂的掺杂少，第二掺杂类型的半导体区域 第二半导体层，使得在半导体区域和第二半导体层之间形成pn结，以及存在于掩埋的第一半导体层中的半导体区域下方的凹部，其包括第一掺杂型半导体材料，其可以 比埋入的第一半导体层的掺杂少，并且在第二半导体层上具有比第二掺杂类型的半导体区域更大的距离，使得跨越pn结的击穿电压高于未设置凹部的击穿电压。 由此，可以在具有优化的HF性质的掩埋的第一半导体层中产生具有期望的击穿电压的半导体结构以及没有该凹槽的另外的半导体结构。