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公开(公告)号：US20210367138A1
公开(公告)日：2021-11-25
申请号：US16881305
申请日：2020-05-22
IPC分类号： H01L41/312 , H01L41/04 , H01L41/047 , H01L41/09 , H01L41/187
摘要： Piezoelectrically actuated devices constructed from thin semiconductor membranes bonded directly to piezoelectric substrates are provided. Methods for fabricating these devices are also provided. The bonding of the semiconductor to the piezoelectric material does not require the use of any intermediate layers, such as bonding agents.
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2.发明授权公开(公告)号：US11711984B2
公开(公告)日：2023-07-25
申请号：US17366195
申请日：2021-07-02
发明人： Max G. Lagally , Robert H. Blick
CPC分类号： H10N60/805 , H01P3/003 , H10N60/12 , H10N60/128 , H10N60/855
摘要： Josephson junctions (JJ) based on bilayers of azimuthally misaligned two-dimensional materials having superconducting states are provided. Also provided are electronic devices and circuits incorporating the JJs as active components and methods of using the electronic devices and circuits. The JJs are formed from bilayers composed of azimuthally misaligned two-dimensional materials having a first superconducting segment and a second superconducting segment separated by a weak-link region that is integrated into the bilayer.
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3.发明申请公开(公告)号：US20220005998A1
公开(公告)日：2022-01-06
申请号：US17366195
申请日：2021-07-02
发明人： Max G. Lagally , Robert H. Blick
摘要： Josephson junctions (JJ) based on bilayers of azimuthally misaligned two-dimensional materials having superconducting states are provided. Also provided are electronic devices and circuits incorporating the JJs as active components and methods of using the electronic devices and circuits. The JJs are formed from bilayers composed of azimuthally misaligned two-dimensional materials having a first superconducting segment and a second superconducting segment separated by a weak-link region that is integrated into the bilayer.
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公开(公告)号：US11864465B2
公开(公告)日：2024-01-02
申请号：US16881305
申请日：2020-05-22
IPC分类号： H01L41/312 , H10N30/072 , H10N30/20 , H10N30/80 , H10N30/87 , H10N30/853
CPC分类号： H10N30/072 , H10N30/206 , H10N30/802 , H10N30/8554 , H10N30/875
摘要： Piezoelectrically actuated devices constructed from thin semiconductor membranes bonded directly to piezoelectric substrates are provided. Methods for fabricating these devices are also provided. The bonding of the semiconductor to the piezoelectric material does not require the use of any intermediate layers, such as bonding agents.
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公开(公告)号：US10930490B1
公开(公告)日：2021-02-23
申请号：US16727201
申请日：2019-12-26
IPC分类号： H01L21/02 , H01L21/308 , B82Y20/00 , H01L21/027 , H01L21/3065 , H01L21/8258 , H01L29/16 , H01L27/088 , G02B5/30 , B82Y40/00
摘要： Methods for fabricating thin, high-aspect-ratio Ge nanostructures from high-quality, single-crystalline Ge substrates are provided. Also provided are grating structures made using the methods. The methods utilize a thin layer of graphene between a surface of a Ge substrate, and an overlying resist layer. The graphene passivates the surface, preventing the formation of water-soluble native Ge oxides that can result in the lift-off of the resist during the development of the resist.
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公开(公告)号：US20150270350A1
公开(公告)日：2015-09-24
申请号：US14222163
申请日：2014-03-21
IPC分类号： H01L29/16 , H01L21/18 , H01L29/161
CPC分类号： H01L29/1606 , H01L21/185 , H01L29/161
摘要： Electrically conductive material structures, analog electronic devices incorporating the structures and methods for making the structures are provided. The structures include a layer of graphene on a semiconductor substrate. The graphene layer and the substrate are separated by an interfacial region that promotes transfer of charge carriers from the surface of the substrate to the graphene.
摘要翻译： 提供了导电材料结构，结合结构的模拟电子装置和用于制造结构的方法。 该结构包括在半导体衬底上的一层石墨烯。 石墨烯层和基底由促进载流子从基底表面转移到石墨烯的界面区域分离。
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公开(公告)号：US11588456B2
公开(公告)日：2023-02-21
申请号：US16882591
申请日：2020-05-25
发明人： Max G. Lagally , Matthew McLean Dwyer , Daniel Warren van der Weide , Abhishek Bhat , Francesca Cavallo , Divya Jyoti Prakash
摘要： Traveling-wave tube amplifiers and methods for making slow-wave structures for the amplifiers are provided. The SWSs include helical conductors that are self-assembled via the release of stressed electrically conductive strips from a sacrificial material. The helical conductors can be electroplated post-self-assembly to fortify the helix, reduce losses, and tailor the dimensions and operating parameters of the helix.
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8.发明授权公开(公告)号：US09472535B2
公开(公告)日：2016-10-18
申请号：US14074955
申请日：2013-11-08
IPC分类号： H01L25/16 , H01L31/028
CPC分类号： H01L25/167 , H01L31/028 , H01L2924/0002 , H01L2924/00
摘要： Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths.
摘要翻译： 提供了包括Ge异质结结构的可调谐p-i-n二极管。 还提供了制造和使用可调谐p-i-n二极管的方法。 通过调整p-i-n异质结结构中的拉伸应变来提供可调性，这使得二极管能够在一定波长范围内发射辐射。
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9.发明申请公开(公告)号：US20140024202A1
公开(公告)日：2014-01-23
申请号：US13945171
申请日：2013-07-18
发明人： Max G. Lagally , Paul G. Evans , Clark S. Ritz
IPC分类号： H01L35/34
CPC分类号： B82Y40/00 , B82Y10/00 , B82Y30/00 , H01L29/0665 , H01L29/0673 , H01L29/127 , H01L35/22 , H01L35/26 , H01L35/32 , H01L35/34 , Y10S977/70
摘要： The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or “nanomembranes.”
摘要翻译： 本发明提供非常适合用于热电应用的纳米线和纳米带。 纳米线和纳米带的特征在于周期性的组成纵向调制。 使用来自薄的半导体膜或“纳米膜”的平版印刷技术构建纳米线。
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公开(公告)号：US20210202240A1
公开(公告)日：2021-07-01
申请号：US17134783
申请日：2020-12-28
IPC分类号： H01L21/02 , H01L29/16 , H01L27/088 , H01L21/8258 , G02B5/30 , H01L21/3065 , H01L21/027
摘要： Methods for fabricating thin, high-aspect-ratio Ge nanostructures from high-quality, single-crystalline Ge substrates are provided. Also provided are grating structures made using the methods. The methods utilize a thin layer of graphene between a surface of a Ge substrate, and an overlying resist layer. The graphene passivates the surface, preventing the formation of water-soluble native Ge oxides that can result in the lift-off of the resist during the development of the resist.
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