发明申请
- 专利标题: GRAPHENE-ON-SEMICONDUCTOR SUBSTRATES FOR ANALOG ELECTRONICS
- 专利标题(中): 用于模拟电子的石墨片半导体衬底
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申请号: US14222163申请日: 2014-03-21
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公开(公告)号: US20150270350A1公开(公告)日: 2015-09-24
- 发明人: Max G. Lagally , Francesca Cavallo , Richard Rojas-Delgado
- 申请人: Wisconsin Alumni Research Foundation
- 主分类号: H01L29/16
- IPC分类号: H01L29/16 ; H01L21/18 ; H01L29/161
摘要:
Electrically conductive material structures, analog electronic devices incorporating the structures and methods for making the structures are provided. The structures include a layer of graphene on a semiconductor substrate. The graphene layer and the substrate are separated by an interfacial region that promotes transfer of charge carriers from the surface of the substrate to the graphene.
公开/授权文献
- US09324804B2 Graphene-on-semiconductor substrates for analog electronics 公开/授权日:2016-04-26
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