公开(公告)号：US20220223720A1

公开(公告)日：2022-07-14

申请号：US17160427

申请日：2021-01-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsung-Yu Yang ,  Shin-Hung Li ,  Ruei-Jhe Tsao ,  Ta-Wei Chiu

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/06

Abstract: A semiconductor structure includes a substrate having a first region and a second region around the first region. A first fin structure is disposed within the first region. A second fin structure is disposed within the second region. A first isolation trench is disposed within the first region and situated adjacent to the first fin structure. A first trench isolation layer is disposed in the first isolation trench. A second isolation trench is disposed around the first region and situated between the first fin structure and the second fin structure. The bottom surface of the second isolation trench has a step height. A second isolation layer is disposed in the second isolation trench.

公开(公告)号：US12206020B2

公开(公告)日：2025-01-21

申请号：US18139964

申请日：2023-04-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsung-Yu Yang ,  Shin-Hung Li ,  Nien-Chung Li ,  Chang-Po Hsiung

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/51 ,  H01L29/66

Abstract: A high voltage semiconductor device includes a semiconductor substrate, an isolation structure, a gate oxide layer, and a gate structure. The semiconductor substrate includes a channel region, and at least a part of the isolation structure is disposed in the semiconductor substrate and surrounds the channel region. The gate oxide layer is disposed on the semiconductor substrate, and the gate oxide layer includes a first portion and a second portion. The second portion is disposed at two opposite sides of the first portion in a horizontal direction, and a thickness of the first portion is greater than a thickness of the second portion. The gate structure is disposed on the gate oxide layer and the isolation structure.

公开(公告)号：US12002883B2

公开(公告)日：2024-06-04

申请号：US17578383

申请日：2022-01-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsung-Yu Yang ,  Shin-Hung Li ,  Ruei-Jhe Tsao ,  Che-Hua Chang

IPC: H01L29/786 ,  H01L29/78

CPC classification number: H01L29/7802 ,  H01L29/78618 ,  H01L29/7869

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a first drift region, a first source/drain region, and a gate oxide layer. The gate structure and the gate oxide layer are disposed on the semiconductor substrate. The first drift region is disposed in the semiconductor substrate. The first source/drain region is disposed in the first drift region. At least a part of a first portion of the gate oxide layer is disposed between the gate structure and the semiconductor substrate in a vertical direction. A second portion of the gate oxide layer is disposed between the first portion and the first source/drain region in a horizontal direction. The second portion includes a bottom extending downwards and a first depressed top surface located above the bottom. A part of the first drift region is located under the first portion and the second portion of the gate oxide layer.

公开(公告)号：US20220209009A1

公开(公告)日：2022-06-30

申请号：US17159166

申请日：2021-01-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsung-Yu Yang ,  Shin-Hung Li ,  Nien-Chung Li ,  Chang-Po Hsiung

IPC: H01L29/78 ,  H01L29/51 ,  H01L29/10 ,  H01L29/06 ,  H01L29/66

Abstract: A high voltage semiconductor device includes a semiconductor substrate, an isolation structure, a gate oxide layer, and a gate structure. The semiconductor substrate includes a channel region, and at least a part of the isolation structure is disposed in the semiconductor substrate and surrounds the channel region. The gate oxide layer is disposed on the semiconductor substrate, and the gate oxide layer includes a first portion and a second portion. The second portion is disposed at two opposite sides of the first portion in a horizontal direction, and a thickness of the first portion is greater than a thickness of the second portion. The gate structure is disposed on the gate oxide layer and the isolation structure.

公开(公告)号：US20240274707A1

公开(公告)日：2024-08-15

申请号：US18645366

申请日：2024-04-24

Applicant: United Microelectronics Corp.

Inventor： Tsung-Yu Yang ,  Shin-Hung Li ,  Ruei-Jhe Tsao ,  Che-Hua Chang

IPC: H01L29/78 ,  H01L29/786

CPC classification number: H01L29/7802 ,  H01L29/78618 ,  H01L29/7869

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a first drift region, a first source/drain region, and a gate oxide layer. The gate structure and the gate oxide layer are disposed on the semiconductor substrate. The first drift region is disposed in the semiconductor substrate. The first source/drain region is disposed in the first drift region. At least a part of a first portion of the gate oxide layer is disposed between the gate structure and the semiconductor substrate in a vertical direction. A second portion of the gate oxide layer is disposed between the first portion and the first source/drain region in a horizontal direction. The second portion includes a bottom extending downwards and a first depressed top surface located above the bottom. A part of the first drift region is located under the first portion and the second portion of the gate oxide layer.

公开(公告)号：US20230335637A1

公开(公告)日：2023-10-19

申请号：US18139960

申请日：2023-04-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsung-Yu Yang ,  Shin-Hung Li ,  Nien-Chung LI ,  Chang-Po Hsiung

IPC: H01L29/78 ,  H01L29/51 ,  H01L29/10 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/7824 ,  H01L29/0649 ,  H01L29/1079 ,  H01L29/517 ,  H01L29/66689

Abstract: A high voltage semiconductor device includes a semiconductor substrate, an isolation structure, a gate oxide layer, and a gate structure. The semiconductor substrate includes a channel region, and at least a part of the isolation structure is disposed in the semiconductor substrate and surrounds the channel region. The gate oxide layer is disposed on the semiconductor substrate, and the gate oxide layer includes a first portion and a second portion. The second portion is disposed at two opposite sides of the first portion in a horizontal direction, and a thickness of the first portion is greater than a thickness of the second portion. The gate structure is disposed on the gate oxide layer and the isolation structure.

公开(公告)号：US20230280298A1

公开(公告)日：2023-09-07

申请号：US17701689

申请日：2022-03-23

Applicant: United Microelectronics Corp.

Inventor： Tsong-Lin Shen ,  Tsung-Yu Yang

IPC: G01N27/24 ,  G01R31/28

CPC classification number: G01N27/24 ,  G01R31/2831

Abstract: A chip crack detection structure, including a substrate, a first chip crack detection ring, a second chip crack detection ring, and a seal ring, is provided. The first chip crack detection ring includes multiple first conductive layers stacked over the substrate and electrically connected to each other. A bottom surface of a lowermost conductive layer among the first conductive layers is not in contact with any plug. The second chip crack detection ring surrounds the first chip crack detection ring. The second chip crack detection ring includes multiple second conductive layers stacked over the substrate and electrically connected to each other. A bottom surface of a lowermost conductive layer among the second conductive layers is not in contact with any plug. The seal ring surrounds the second chip crack detection ring. The seal ring includes multiple third conductive layers stacked over the substrate and electrically connected to each other.

公开(公告)号：US20230197843A1

公开(公告)日：2023-06-22

申请号：US17578383

申请日：2022-01-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsung-Yu Yang ,  Shin-Hung Li ,  Ruei-Jhe Tsao ,  Che-Hua Chang

IPC: H01L29/78 ,  H01L29/786

CPC classification number: H01L29/7802 ,  H01L29/7869 ,  H01L29/78618

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a first drift region, a first source/drain region, and a gate oxide layer. The gate structure and the gate oxide layer are disposed on the semiconductor substrate. The first drift region is disposed in the semiconductor substrate. The first source/drain region is disposed in the first drift region. At least a part of a first portion of the gate oxide layer is disposed between the gate structure and the semiconductor substrate in a vertical direction. A second portion of the gate oxide layer is disposed between the first portion and the first source/drain region in a horizontal direction. The second portion includes a bottom extending downwards and a first concave top surface located above the bottom. A part of the first drift region is located under the first portion and the second portion of the gate oxide layer.

公开(公告)号：US20230187547A1

公开(公告)日：2023-06-15

申请号：US17569527

申请日：2022-01-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Che-Hua Chang ,  Shin-Hung Li ,  Tsung-Yu Yang ,  Ruei-Jhe Tsao

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/423 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/7825 ,  H01L29/401 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/66704

Abstract: A semiconductor device includes a semiconductor substrate, a trench, and a gate structure. The trench is disposed in the semiconductor substrate. The gate structure is disposed on the semiconductor substrate. The gate structure includes a gate electrode, a first gate oxide layer, and a second gate oxide layer. A first portion of the gate electrode is disposed in the trench, and a second portion of the gate electrode is disposed outside the trench. The first gate oxide layer is disposed between the gate electrode and the semiconductor substrate. At least a portion of the first gate oxide layer is disposed in the trench. The second gate oxide layer is disposed between the second portion of the gate electrode and the semiconductor substrate in a vertical direction. A thickness of the second gate oxide layer is greater than a thickness of the first gate oxide layer.

公开(公告)号：US20240339534A1

公开(公告)日：2024-10-10

申请号：US18746063

申请日：2024-06-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Che-Hua Chang ,  Shin-Hung Li ,  Tsung-Yu Yang ,  Ruei-Jhe Tsao

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/7825 ,  H01L29/1095 ,  H01L29/401 ,  H01L29/42368 ,  H01L29/66704

Abstract: A semiconductor device includes a semiconductor substrate, a trench, and a gate structure. The trench is disposed in the semiconductor substrate. The gate structure is disposed on the semiconductor substrate. The gate structure includes a gate electrode, a first gate oxide layer, and a second gate oxide layer. A first portion of the gate electrode is disposed in the trench, and a second portion of the gate electrode is disposed outside the trench. The first gate oxide layer is disposed between the gate electrode and the semiconductor substrate. At least a portion of the first gate oxide layer is disposed in the trench. The second gate oxide layer is disposed between the second portion of the gate electrode and the semiconductor substrate in a vertical direction. A thickness of the second gate oxide layer is greater than a thickness of the first gate oxide layer.