知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

6 records (took 0.013 seconds)

    Semiconductor chip
    1.
    发明授权
    Semiconductor chip 有权

    公开(公告)号：US10340230B1

    公开(公告)日：2019-07-02

    申请号：US15847567

    申请日：2017-12-19

    Applicant: United Microelectronics Corp.

    Inventor： Tsong-Lin Shen ,  Chen-Hsiao Wang ,  Sheng-Wei Hung ,  Chin-Tsai Chang ,  Hui-Lung Chou

    IPC: H01L23/528 ,  H01L23/00 ,  H01L23/532

    Abstract: A semiconductor chip is provided. The semiconductor chip includes at least one interlayer dielectric layer, a transmission pattern and a stress absorption structure. The at least one interlayer dielectric layer is disposed on a substrate. The transmission pattern is disposed on the at least one interlayer dielectric layer and within a peripheral region of the semiconductor chip. The transmission pattern is electrically connected to an external signal source. The stress absorption structure is disposed in the at least one interlayer dielectric layer within the peripheral region, and electrically connected to the transmission pattern. The stress absorption structure is covered by the transmission pattern.

    Chip crack detection structure
    2.
    发明授权
    Chip crack detection structure 有权

    公开(公告)号：US11774392B1

    公开(公告)日：2023-10-03

    申请号：US17701689

    申请日：2022-03-23

    Applicant: United Microelectronics Corp.

    Inventor： Tsong-Lin Shen ,  Tsung-Yu Yang

    IPC: G01N27/24 ,  G01R31/28

    CPC classification number: G01N27/24 ,  G01R31/2831

    Abstract: A chip crack detection structure, including a substrate, a first chip crack detection ring, a second chip crack detection ring, and a seal ring, is provided. The first chip crack detection ring includes multiple first conductive layers stacked over the substrate and electrically connected to each other. A bottom surface of a lowermost conductive layer among the first conductive layers is not in contact with any plug. The second chip crack detection ring surrounds the first chip crack detection ring. The second chip crack detection ring includes multiple second conductive layers stacked over the substrate and electrically connected to each other. A bottom surface of a lowermost conductive layer among the second conductive layers is not in contact with any plug. The seal ring surrounds the second chip crack detection ring. The seal ring includes multiple third conductive layers stacked over the substrate and electrically connected to each other.

    CHIP CRACK DETECTION STRUCTURE
    4.
    发明公开
    CHIP CRACK DETECTION STRUCTURE 审中-公开

    公开(公告)号：US20230280298A1

    公开(公告)日：2023-09-07

    申请号：US17701689

    申请日：2022-03-23

    Applicant: United Microelectronics Corp.

    Inventor： Tsong-Lin Shen ,  Tsung-Yu Yang

    IPC: G01N27/24 ,  G01R31/28

    CPC classification number: G01N27/24 ,  G01R31/2831

    Abstract: A chip crack detection structure, including a substrate, a first chip crack detection ring, a second chip crack detection ring, and a seal ring, is provided. The first chip crack detection ring includes multiple first conductive layers stacked over the substrate and electrically connected to each other. A bottom surface of a lowermost conductive layer among the first conductive layers is not in contact with any plug. The second chip crack detection ring surrounds the first chip crack detection ring. The second chip crack detection ring includes multiple second conductive layers stacked over the substrate and electrically connected to each other. A bottom surface of a lowermost conductive layer among the second conductive layers is not in contact with any plug. The seal ring surrounds the second chip crack detection ring. The seal ring includes multiple third conductive layers stacked over the substrate and electrically connected to each other.

Patent Agency Ranking