公开(公告)号：US20180162725A1

公开(公告)日：2018-06-14

申请号：US15373489

申请日：2016-12-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsong-Lin Shen ,  Chien-Chung Su ,  Chih-Cheng Wang ,  Yu-Chih Chuang ,  Sheng-Wei Hung ,  Min-Hung Wang ,  Chin-Tsai Chang

IPC: B81C1/00 ,  B81B7/02 ,  H04R19/04 ,  H04R19/00 ,  H04R7/16

Abstract: A semiconductor device includes a semiconductor substrate comprising a MOS transistor. A MEMS device is integrally constructed above the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.

公开(公告)号：US10472232B2

公开(公告)日：2019-11-12

申请号：US15373489

申请日：2016-12-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsong-Lin Shen ,  Chien-Chung Su ,  Chih-Cheng Wang ,  Yu-Chih Chuang ,  Sheng-Wei Hung ,  Min-Hung Wang ,  Chin-Tsai Chang

IPC: B81C1/00 ,  B81B7/02 ,  H04R19/04 ,  H04R19/00 ,  H04R7/16 ,  H04R31/00

Abstract: A semiconductor device includes a semiconductor substrate comprising a MOS transistor. A MEMS device is integrally constructed above the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.