公开(公告)号：US20150368597A1

公开(公告)日：2015-12-24

申请号：US14746600

申请日：2015-06-22

Applicant: TOKYO OHKA KOGYO CO., LTD.

Inventor： Takahiro Eto ,  Mai Sugawara

IPC: C11D11/00 ,  H01L21/768 ,  C11D7/36 ,  C11D7/04 ,  C11D7/02

CPC classification number: C11D11/0047 ,  C11D3/3947 ,  C11D7/02 ,  C11D7/04 ,  C11D7/06 ,  C11D7/14 ,  C11D7/36 ,  H01L21/31144 ,  H01L21/32134

Abstract: A stripping solution that is used for removal of titanium or a titanium compound, whereby superior stripping removal performance of the solution can be stably maintained when the solution is continuously circulated, and a method of wiring formation using the stripping solution. The stripping solution includes a basic compound, hydrogen peroxide, water, and at least one of an alkali metal silicate and a bisphosphonate compound. The titanium compound may be titanium nitride, and the stripping solution may be used for removal of a hard mask including titanium or a titanium compound.

Abstract translation: 用于去除钛或钛化合物的剥离溶液，从而当溶液连续循环时，可以稳定地维持溶液的优异的剥离去除性能，以及使用剥离溶液的布线形成方法。 剥离溶液包括碱性化合物，过氧化氢，水以及碱金属硅酸盐和二膦酸盐化合物中的至少一种。 钛化合物可以是氮化钛，并且剥离溶液可以用于除去包括钛或钛化合物的硬掩模。

公开(公告)号：US08802610B2

公开(公告)日：2014-08-12

申请号：US14021505

申请日：2013-09-09

Applicant: Tokyo Ohka Kogyo Co., Ltd.

Inventor： Tomoya Kumagai ,  Takuya Ohhashi ,  Takahiro Eto ,  Daijiro Mori ,  Takayuki Haraguchi

IPC: C11D7/34

CPC classification number: C23G1/26 ,  C23F11/161 ,  C23G1/20

Abstract: A method of cleaning a substrate having a metal layer including copper or a copper-containing alloy, the method including cleaning the substrate using a cleaning liquid that includes a mercapto compound represented by one or both of the following formulas (1) and (2), and a solvent containing water and a water-soluble organic solvent: in which R represents a substituent group; m is an integer of 1 to 3; and n is an integer of 0 to 3, when m is 2 or 3, R may be the same or different; HS—(CH2)x—OH  (2), in which x is an integer of no less than 3.

Abstract translation: 一种清洗具有包含铜或含铜合金的金属层的基板的方法，所述方法包括使用包括由下式（1）和（2）中的一个或两个表示的巯基化合物的清洗液清洗所述基板， 和含有水和水溶性有机溶剂的溶剂：其中R表示取代基; m为1〜3的整数。 n为0〜3的整数，当m为2或3时，R可以相同或不同， HS-（CH2）x-OH（2），其中x为不小于3的整数。

公开(公告)号：US20140018281A1

公开(公告)日：2014-01-16

申请号：US14021505

申请日：2013-09-09

Applicant: Tokyo Ohka Kogyo Co., Ltd.

Inventor： Tomoya Kumagai ,  Takuya Ohhashi ,  Takahiro Eto ,  Daijiro Mori ,  Takayuki Haraguchi

IPC: C23G1/26

CPC classification number: C23G1/26 ,  C23F11/161 ,  C23G1/20

Abstract: A method of cleaning a substrate having a metal layer including copper or a copper-containing alloy, the method including cleaning the substrate using a cleaning liquid that includes a mercapto compound represented by one or both of the following formulas (1) and (2), and a solvent containing water and a water-soluble organic solvent: in which R represents a substituent group; m is an integer of 1 to 3; and n is an integer of 0 to 3, when m is 2 or 3, R may be the same or different; HS—(CH2)x—OH  (2), in which x is an integer of no less than 3.

Abstract translation: 一种清洗具有包含铜或含铜合金的金属层的基板的方法，所述方法包括使用包括由下式（1）和（2）中的一个或两个表示的巯基化合物的清洗液清洗所述基板， 和含有水和水溶性有机溶剂的溶剂：其中R表示取代基; m为1〜3的整数。 n为0〜3的整数，当m为2或3时，R可以相同或不同， HS-（CH2）x-OH（2），其中x为不小于3的整数。

公开(公告)号：US11385548B2

公开(公告)日：2022-07-12

申请号：US16748041

申请日：2020-01-21

Applicant: TOKYO OHKA KOGYO CO., LTD.

Inventor： Takahiro Eto

IPC: G03F7/42 ,  G03F7/30 ,  G03F7/20

Abstract: A resist stripping process liquid including a basic compound containing a nitrogen atom, an organic solvent, and water, the organic solvent including a cyclic amide compound, and the cyclic amide compound including 0.5% by mass or more of a compound represented by the following formula (1), based on the total amount of the process liquid. In formula (1), n represents an integer of 1 to 5, and R represents a C2-C10 organic group.

公开(公告)号：US20200241424A1

公开(公告)日：2020-07-30

申请号：US16748041

申请日：2020-01-21

Applicant: Tokyo Ohka Kogyo Co., Ltd.

Inventor： Takahiro Eto

IPC: G03F7/42

Abstract: A resist stripping process liquid including a basic compound containing a nitrogen atom, an organic solvent, and water, the organic solvent including a cyclic amide compound, and the cyclic amide compound including 0.5% by mass or more of a compound represented by the following formula (1), based on the total amount of the process liquid. In formula (1), n represents an integer of 1 to 5, and R represents a C2-C10 organic group.

公开(公告)号：US09920286B2

公开(公告)日：2018-03-20

申请号：US15084295

申请日：2016-03-29

Applicant: TOKYO OHKA KOGYO CO., LTD.

Inventor： Tomoya Kumagai ,  Takahiro Eto

IPC: H01L21/02 ,  C11D7/50 ,  G03F7/42 ,  B08B3/08 ,  C11D7/08 ,  C11D7/26 ,  C11D7/32

CPC classification number: C11D7/5022 ,  B08B3/08 ,  C11D7/08 ,  C11D7/263 ,  C11D7/3209 ,  C11D7/5009 ,  G03F7/423 ,  G03F7/425 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068

Abstract: A cleaning liquid for lithography, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for includes an alkali or an acid, a solvent, and a silicon compound generating a silanol group through hydrolysis. The method forms a metal wiring layer by embedding a metal in an etching space formed in a low dielectric constant layer of a semiconductor multilayer laminate. In this method, the semiconductor multilayer laminate is cleaned using the cleaning liquid for lithography, after formation of the etching space.

公开(公告)号：US20130330927A1

公开(公告)日：2013-12-12

申请号：US13913901

申请日：2013-06-10

Applicant: Tokyo Ohka Kogyo Co., Ltd.

Inventor： Tomoya Kumagai ,  Takahiro Eto

IPC: G03F7/42 ,  H01L21/02

CPC classification number: C11D7/5022 ,  B08B3/08 ,  C11D7/08 ,  C11D7/263 ,  C11D7/3209 ,  C11D7/5009 ,  G03F7/423 ,  G03F7/425 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068

Abstract: A cleaning liquid for lithography, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for includes an alkali or an acid, a solvent, and a silicon compound generating a silanol group through hydrolysis. The method forms a metal wiring layer by embedding a metal in an etching space formed in a low dielectric constant layer of a semiconductor multilayer laminate. In this method, the semiconductor multilayer laminate is cleaned using the cleaning liquid for lithography, after formation of the etching space.

Abstract translation: 一种用于光刻的清洁液，以及使用该光刻用清洗液形成布线的方法。 用于包含碱或酸，溶剂和通过水解生成硅烷醇基的硅化合物的清洗液。 该方法通过在形成于半导体多层叠层的低介电常数层的蚀刻空间中嵌入金属而形成金属布线层。 在该方法中，在形成蚀刻空间之后，使用用于光刻的清洁液来清洁半导体多层叠层。

公开(公告)号：US20130172224A1

公开(公告)日：2013-07-04

申请号：US13728728

申请日：2012-12-27

Applicant: Tokyo Ohka Kogyo Co., Ltd.

Inventor： Tomoya Kumagai ,  Takuya Ohhashi ,  Takahiro Eto ,  Daijiro Mori ,  Takayuki Haraguchi

IPC: C23G1/26

CPC classification number: C23G1/26 ,  C23F11/161 ,  C23G1/20

Abstract: In a cleaning liquid containing (A) an anticorrosive agent, and (B) a solvent, a compound represented by the following formula (1): wherein, R represents a substituent group; m is an integer of 1 to 3; and n is an integer of 0 to 3, wherein provided that m is 2 or 3, R may be the same or different; or the following formula (2): HS—(CH2)x—OH  (2) wherein, x is an integer of no less than 3, is used as the anticorrosive agent (A).

Abstract translation: 在含有（A）防腐剂的清洗液和（B）溶剂中，由下式（1）表示的化合物：其中，R表示取代基; m为1〜3的整数。 n为0〜3的整数，m为2或3的情况下，R可以相同或不同， 或下式（2）表示：HS-（CH2）x-OH（2）其中x为不小于3的整数，用作防腐剂（A）。

公开(公告)号：US20240409812A1

公开(公告)日：2024-12-12

申请号：US18732471

申请日：2024-06-03

Applicant: Tokyo Ohka Kogyo Co., Ltd.

Inventor： Takahiro Eto

IPC: C09K13/06 ,  C09K13/08

Abstract: A treatment liquid containing a fluorine-containing compound, an organic solvent, a basic compound represented by General Formula NR1R2R3, and water, in which a content of the organic solvent is 65% by mass or more with respect to a total amount of the treatment liquid, and a pH is 6 to 9. In the formula, R1 to R3 are each independently a hydrogen atom or a hydrocarbon group which may have a substituent.

公开(公告)号：US11807792B2

公开(公告)日：2023-11-07

申请号：US17181352

申请日：2021-02-22

Applicant: TOKYO OHKA KOGYO CO., LTD.

Inventor： Takahiro Eto ,  Lihong Liu

IPC: C09K13/04 ,  H01L21/306 ,  C09K13/06 ,  H01L21/3213 ,  C09K13/08 ,  H01L21/311

CPC classification number: C09K13/04 ,  C09K13/06 ,  C09K13/08 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/32134

Abstract: A semiconductor processing liquid including hydrofluoric acid, and an organic solvent, in which the organic solvent contains a compound represented by the formula below in which X1 is a single bond or an alkylene group having 1 to 6 carbon atoms, in which an ether bond may be interposed, Y10 is one of —O—, —(C═O)—, —O—(C═O)—, and —(C═O)—O—, Y20 is one of —(C═O)—, —O—(C═O)—, and —(C═O)—O—, and Y11 and Y21 are each independently a single bond or an alkylene group having 1 to 6 carbon atoms in which an ether bond may be interposed, provided that, X1, Y11, and Y21 do not contain hydroxyl groups in structures thereof, and when X1 is a single bond, Y10 is not —O—)

H3C—Y11—Y10—X1—Y20—Y21—CH3  (1).