公开(公告)号：US20200032395A1

公开(公告)日：2020-01-30

申请号：US16522890

申请日：2019-07-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Michiko NAKAYA ,  Toru HISAMATSU ,  Shinya ISHIKAWA ,  Sho KUMAKURA ,  Masanobu HONDA ,  Yoshihide KIHARA

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  C23C16/52

Abstract: A plasma processing method executed by a plasma processing apparatus in the present disclosure includes a first step and a second step. In the first step, the plasma processing apparatus forms a first film on the side walls of an opening in the processing target, the first film having different thicknesses along a spacing between pairs of side walls facing each other. In the second step, the plasma processing apparatus forms a second film by performing a film forming cycle once or more times after the first step, the second film having different thicknesses along the spacing between the pairs of side walls facing each other.

公开(公告)号：US20180247826A1

公开(公告)日：2018-08-30

申请号：US15903437

申请日：2018-02-23

Applicant: Tokyo Electron Limited

Inventor： Michiko NAKAYA ,  Masanobu HONDA

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/768

CPC classification number: H01L21/30655 ,  H01J37/32 ,  H01J2237/3327 ,  H01J2237/3347 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/7682

Abstract: A processing method including a first step of supplying a first gas including a carbon-containing gas and an inert gas into an inside of a chamber and a second step of generating plasma from the supplied first gas by applying high frequency power for generating plasma and causing a chemical compound including organic matter on a pattern of a predetermined film formed on an object to be processed, wherein a ratio of the carbon-containing gas relative to the inert gas included in the first gas is 1% or less.

公开(公告)号：US20210265135A1

公开(公告)日：2021-08-26

申请号：US17182896

申请日：2021-02-23

Applicant: Tokyo Electron Limited

Inventor： Michiko NAKAYA ,  Yuya MINOURA ,  Taku GOHIRA

IPC: H01J37/32

Abstract: A method of processing a substrate with plasma includes: coating surfaces of components inside a chamber with a film having conductive properties by turning a first gas containing carbon and hydrogen into plasma inside the chamber; loading the substrate into the chamber; and processing the substrate by turning a second gas into plasma inside the chamber in a state where the surfaces of the components inside the chamber are coated with the film having conductive properties.

公开(公告)号：US20180247827A1

公开(公告)日：2018-08-30

申请号：US15903466

申请日：2018-02-23

Applicant: Tokyo Electron Limited

Inventor： Michiko NAKAYA ,  Masanobu HONDA ,  Toru HISAMATSU ,  Masahiro TABATA

IPC: H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/31116 ,  H01L21/02063 ,  H01L21/02076 ,  H01L21/32138 ,  H01L21/76814

Abstract: A semiconductor manufacturing method includes a first process of etching an insulating film over a conductive layer of an object into a pattern of a mask, and exposing the conductive layer to a recessed portion formed in the insulating film, and a second process of forming an organic film in the recessed portion of the insulating film to which the conductive layer is exposed, the second process including, maintaining a chamber at a predetermined pressure, cooling a stage to −20° C. or less, and placing the object on the stage, supplying a gas including a gas containing a low vapor pressure material to the chamber, and generating plasma from the gas including the gas containing the low vapor pressure material, and causing precursors generated from the low vapor pressure material and included in the plasma to be deposited in the recessed portion such that the organic film is formed.

公开(公告)号：US20220411928A1

公开(公告)日：2022-12-29

申请号：US17900577

申请日：2022-08-31

Applicant: Tokyo Electron Limited

Inventor： Michiko NAKAYA ,  Toru Hisamatsu ,  Shinya Ishikawa ,  Sho Kumakura ,  Masanobu Honda ,  Yoshihide Kihara

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  C23C16/52

Abstract: A plasma processing apparatus in the present disclosure includes a plasma processing chamber, a gas supply, a power supply, and a controller. The controller causes (a) forming a first film on side walls of an opening of a processing target using the plasma so that the first film has different thicknesses along a spacing between pairs of side walls facing each other, and (b) forming a second film by performing a film forming cycle one or more times after (a) so that the second film has different thicknesses along the spacing between the pairs of side walls facing each other.

公开(公告)号：US20230360891A1

公开(公告)日：2023-11-09

申请号：US18220403

申请日：2023-07-11

Applicant: Tokyo Electron Limited

Inventor： Michiko NAKAYA ,  Yuya MINOURA ,  Taku GOHIRA

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J2237/332

Abstract: A method of processing a substrate with plasma includes: coating surfaces of components inside a chamber with a film having conductive properties by turning a first gas containing carbon and hydrogen into plasma inside the chamber; loading the substrate into the chamber; and processing the substrate by turning a second gas into plasma inside the chamber in a state where the surfaces of the components inside the chamber are coated with the film having conductive properties.

公开(公告)号：US20220059361A1

公开(公告)日：2022-02-24

申请号：US17445625

申请日：2021-08-23

Applicant: Tokyo Electron Limited

Inventor： Michiko NAKAYA ,  Taku GOHIRA ,  Hyoseok SONG ,  Masahiro TADOKORO ,  Kentaro NUMATA ,  Keita YAEGASHI

IPC: H01L21/311 ,  H01J37/32

Abstract: An etching method for providing an etch profile is provided. The etching method includes preparing a substrate in which a laminate film is formed, the laminate film including silicon oxide films and silicon films stacked in alternation. The etching method includes cooling a surface temperature of the substrate to −40° C. or less. The etching method includes forming a plasma from gas containing hydrogen and fluorine, based on radio frequency power for plasma formation. The etching method includes etching the laminate film with the formed plasma.

公开(公告)号：US20210313187A1

公开(公告)日：2021-10-07

申请号：US17269602

申请日：2019-08-08

Applicant: Tokyo Electron Limited

Inventor： Kiyohito ITO ,  Shinya MORIKITA ,  Kensuke TANIGUCHI ,  Michiko NAKAYA ,  Masanobu HONDA

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/3213

Abstract: A treatment method is provided that includes an embedding step of embedding an organic film in an undercoat film in which a depression is formed; and an etching step of performing etching, after the embedding step, until at least a portion of a top of the undercoat film is exposed.

公开(公告)号：US20180247858A1

公开(公告)日：2018-08-30

申请号：US15897467

申请日：2018-02-15

Applicant: Tokyo Electron Limited

Inventor： Michiko NAKAYA ,  Masanobu HONDA

IPC: H01L21/762 ,  H01L21/67 ,  H01L21/02 ,  H01L21/683 ,  C23C16/505 ,  H01J37/32

CPC classification number: H01L21/76224 ,  C23C16/505 ,  H01J37/32449 ,  H01J37/32816 ,  H01J2237/332 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/0217 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/6833

Abstract: A film deposition method includes maintaining an inside of a chamber to have a predetermined pressure, cooling a stage, on which the object to be processed mounts, to have an ultralow temperature of −20° C., and mounting the object to be processed on the stage, supplying a gas including a low vapor pressure material gas of a low vapor pressure material into the inside of the chamber, and generating plasma from the supplied gas including the gas of the low vapor pressure material, and causing a precursor generated from the low vapor pressure material by the plasma to be deposited on a recess part of the object to be processed.