公开(公告)号：US20250046615A1

公开(公告)日：2025-02-06

申请号：US18918152

申请日：2024-10-17

Applicant: Tokyo Electron Limited

Inventor： Takahiro YOKOYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Ryutaro SUDA ,  Takatoshi ORUI

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.

公开(公告)号：US20240412955A1

公开(公告)日：2024-12-12

申请号：US18810862

申请日：2024-08-21

Applicant: Tokyo Electron Limited ,  TAIYO NIPPON SANSO CORPORATION

Inventor： Masahiko YOKOI ,  Koki TANAKA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Masahiro YONEKURA

IPC: H01J37/32

Abstract: A temperature adjusting system is a temperature adjusting system that cools a part in a plasma processing chamber and includes: a condenser that condenses a temperature adjusting medium that is in a gaseous state at normal temperature and normal pressure; a heat exchanger that cools the temperature adjusting medium that has been condensed by the condenser; a temperature adjusting unit that cools the part by heat exchange with the temperature adjusting medium that has been cooled by the heat exchanger; and a pump that circulates the temperature adjusting medium.

公开(公告)号：US20240355589A1

公开(公告)日：2024-10-24

申请号：US18757575

申请日：2024-06-28

Applicant: Tokyo Electron Limited

Inventor： Koki MUKAIYAMA ,  Maju TOMURA ,  Yoshihide KIHARA

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J2237/334

Abstract: An etching method includes: (a) providing a substrate including an organic film and a mask on the organic film, (b) etching the organic film by a first plasma generated from a first processing gas containing an oxygen-containing gas to form a recess in the organic film, and (c) after (b), exposing the recess to a second plasma generated from a second processing gas containing a tungsten-containing gas.

公开(公告)号：US20240203698A1

公开(公告)日：2024-06-20

申请号：US18390221

申请日：2023-12-20

Applicant: Tokyo Electron Limited

Inventor： Ryo MATSUBARA ,  Koki MUKAIYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Satoshi OHUCHIDA ,  Takuto KIKUCHI

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J2237/334

Abstract: Provided is an etching method that includes: (a) preparing a substrate, the substrate including a first region and a second region below the first region, the first region containing a first material and having at least one opening, the second region containing a second material that is different from the first material and contains silicon; and (b) etching the second region through the at least one opening by using a plasma generated from a processing gas containing a fluorine containing gas and a CxHyClz (x and y are each an integer of 0 or more, x+y≥1, and z is an integer of 1 or more) gas.

公开(公告)号：US20240006168A1

公开(公告)日：2024-01-04

申请号：US18369219

申请日：2023-09-18

Applicant: Tokyo Electron Limited

Inventor： Satoshi OHUCHIDA ,  Koki MUKAIYAMA ,  Yusuke WAKO ,  Maju TOMURA ,  Yoshihide KIHARA

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  B08B5/00 ,  B08B13/00 ,  B08B3/08

CPC classification number: H01J37/32724 ,  H01L21/0206 ,  H01L21/31138 ,  B08B5/00 ,  B08B13/00 ,  B08B3/08 ,  H01L21/31144 ,  H01J2237/334

Abstract: A substrate processing method includes: (a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus; (b) supplying a processing gas including hydrogen fluoride gas into the chamber; (c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and (d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure. In a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.

公开(公告)号：US20230307243A1

公开(公告)日：2023-09-28

申请号：US18124593

申请日：2023-03-22

Applicant: Tokyo Electron Limited

Inventor： Maju TOMURA ,  Yoshihide KIHARA

IPC: H01L21/3065 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01L21/31116 ,  H01L21/31144 ,  H01J37/32449 ,  H01J2237/334

Abstract: An etching method includes: (a) providing a substrate having a silicon-containing film and a mask on the silicon-containing film in a chamber of a plasma processing apparatus, and (b) etching the silicon-containing film by generating plasma from a processing gas containing HF gas, and PClaFb gas (each of a and b is an integer of 1 or more) or PCcHdFe gas (c is an integer of 0 or more, and each of d and e is an integer of 1 or more), in the chamber.

公开(公告)号：US20230215700A1

公开(公告)日：2023-07-06

申请号：US18121611

申请日：2023-03-15

Applicant: Tokyo Electron Limited

Inventor： Kae KUMAGAI ,  Motoi TAKAHASHI ,  Ryutaro SUDA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Takatoshi ORUI

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32449 ,  H01J37/32715 ,  H01J37/32798 ,  H01L21/02164 ,  H01L21/0217 ,  H01J37/32082 ,  H01J37/32458 ,  H01J2237/334

Abstract: A substrate processing method includes placing a substrate with a dielectric film on a substrate support in a chamber, and etching the dielectric film with plasm generated from a reaction gas containing an HF gas and at least one CxHyFz gas selected from the group consisting of a C4H2F6 gas, a C4H2F8 gas, a C3H2F4 gas, and a C3H2F6 gas. The etching includes setting the substrate support at a temperature of 0° C. or lower and setting the HF gas to a flow rate greater than a flow rate of the CxHyFz gas.

公开(公告)号：US20230135998A1

公开(公告)日：2023-05-04

申请号：US17978558

申请日：2022-11-01

Applicant: Tokyo Electron Limited

Inventor： Satoshi OHUCHIDA ,  Koki MUKAIYAMA ,  Noboru SAITO ,  Yoshihide KIHARA ,  Maju TOMURA

IPC: H01J37/32 ,  H01L21/311

Abstract: A plasma processing method performed in a plasma processing apparatus having a chamber is provided. This method comprises: (a) providing a substrate having a film stack including a silicon oxide film and a silicon nitride film onto a substrate support in the chamber; and (b) forming a plasma from a processing gas containing HF gas and at least one of CxFy gas (where x and y are integers equal to or greater than 1) and phosphorus-containing gas to etch the film stack, wherein, in (b), the substrate support is controlled to a temperature of 0° C. or more and 70° C. or less, and a bias RF signal of 10 kW or more or a bias DC signal of 4 kV or more is supplied to the substrate support.

公开(公告)号：US20210202233A1

公开(公告)日：2021-07-01

申请号：US17128215

申请日：2020-12-21

Applicant: Tokyo Electron Limited

Inventor： Tomohiko NIIZEKI ,  Maju TOMURA ,  Yoshihide KIHARA

IPC: H01L21/02 ,  H01L21/3065 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52 ,  H01L21/67

Abstract: A substrate processing method suppresses a shape abnormality of a pattern formed on a substrate. The substrate processing method executed by a substrate processing apparatus includes step a), step b), and step c). The step a) is a step of providing a substrate including an etching target film and a mask layer formed on the etching target film in which the mask layer has an opening. The step b) is a step of forming a protective film on an upper portion of an opening of the mask. The step c) is a step of etching the mask while suppressing a variation of an opening dimension of the upper portion of the opening by the protective film, and varying a dimension of a lower portion of the opening not covered by the protective film.

公开(公告)号：US20200279757A1

公开(公告)日：2020-09-03

申请号：US16804807

申请日：2020-02-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Sho KUMAKURA ,  Hironari SASAGAWA ,  Maju TOMURA ,  Yoshihide KIHARA

IPC: H01L21/67 ,  H01L21/033 ,  H01L21/027 ,  C23C16/46 ,  C23C16/02 ,  C23C16/50

Abstract: A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.