公开(公告)号：US20230005753A1

公开(公告)日：2023-01-05

申请号：US17856251

申请日：2022-07-01

Applicant: Tokyo Electron Limited

Inventor： Fumiya TAKATA ,  Shota YOSHIMURA ,  Shinya MORIKITA ,  Kota OIKAWA

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32

Abstract: An etching method includes: (a) providing a substrate including a first region containing silicon and nitrogen and a second region containing silicon and oxygen; (b) forming a tungsten-containing deposit on the first region using a first plasma generated from a first processing gas containing fluorine, tungsten, and at least one selected from a group consisting of carbon and hydrogen; and (c) after (b), etching the second region using a second plasma generated from a second processing gas different from the first processing gas.

公开(公告)号：US20200328064A1

公开(公告)日：2020-10-15

申请号：US16844449

申请日：2020-04-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mohd Fairuz BIN BUDIMAN ,  Shinya MORIKITA ,  Toshifumi NAGAIWA

IPC: H01J37/32 ,  H05H1/46

Abstract: A cleaning method is provided. In the cleaning method, a cleaning gas is supplied into a processing chamber, a radio frequency (RF) power for plasma generation is applied to one of a first electrode on which a substrate is to be mounted and a second electrode disposed to be opposite to the first electrode in the processing chamber, and a negative voltage is applied to an edge ring disposed to surround the substrate. Further, plasma is generated from the cleaning gas and a cleaning process using the plasma is performed.

公开(公告)号：US20250149300A1

公开(公告)日：2025-05-08

申请号：US19015772

申请日：2025-01-10

Applicant: Tokyo Electron Limited

Inventor： Tangkuei WANG ,  Tetsuya OHISHI ,  Masafumi URAKAWA ,  Shinya MORIKITA

IPC: H01J37/32

Abstract: In a plasma processing apparatus disclosed, a controller performs repetition of a cycle. The cycle includes supplying a pulse of a source high-frequency power from a high-frequency power supply for generating plasma from gas in a chamber, and supplying a pulse of an electric bias to a substrate support from a bias power supply. The pulse of the electric bias includes a direct current voltage pulse periodically generated at a bias frequency of 1 MHz or less. A repetition frequency of the cycle is 5 kHz or more. A start timing of the pulse of the electric bias is simultaneous with or earlier than a stop timing of the pulse of the source high-frequency power. A stop timing of the pulse of the electric bias is later than the stop timing of the pulse of the source high-frequency power.

公开(公告)号：US20230386798A1

公开(公告)日：2023-11-30

申请号：US18199401

申请日：2023-05-19

Applicant: Tokyo Electron Limited

Inventor： Mohd Fairuz BIN BUDIMAN ,  Shinya MORIKITA ,  Masafumi URAKAWA

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32715 ,  H01J37/3244

Abstract: There is provided a substrate processing apparatus comprising: a plasma processing chamber; a support accommodated in the plasma processing chamber; an inner edge ring provided around a substrate; an outer edge ring provided around the inner edge ring, the outer edge ring having an inner peripheral portion overlapping an outer peripheral portion of the inner edge ring when viewed from above and having a first alignment portion; an outer edge ring electrostatic chuck disposed at a position of the support, the position facing the outer edge ring; and a lifter configured to move the inner edge ring and/or the outer edge ring up and down. The inner edge ring is configured to be aligned with the outer edge ring by the first alignment portion in a state in which the outer edge ring electrostatic chuck is driven and the outer edge ring is attracted.

公开(公告)号：US20220406613A1

公开(公告)日：2022-12-22

申请号：US17842791

申请日：2022-06-17

Applicant: Tokyo Electron Limited

Inventor： Fumiya TAKATA ,  Shota YOSHIMURA ,  Shinya MORIKITA

IPC: H01L21/311 ,  H01L21/02

Abstract: An etching method includes: preparing a substrate including a first region containing silicon and nitrogen, and a second region containing silicon and oxygen; and etching the second region while firming a tungsten-containing protective layer on the first region, by exposing the first and second regions to plasma generated from a processing gas containing carbon, fluorine, and tungsten.

公开(公告)号：US20210313187A1

公开(公告)日：2021-10-07

申请号：US17269602

申请日：2019-08-08

Applicant: Tokyo Electron Limited

Inventor： Kiyohito ITO ,  Shinya MORIKITA ,  Kensuke TANIGUCHI ,  Michiko NAKAYA ,  Masanobu HONDA

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/3213

Abstract: A treatment method is provided that includes an embedding step of embedding an organic film in an undercoat film in which a depression is formed; and an etching step of performing etching, after the embedding step, until at least a portion of a top of the undercoat film is exposed.

公开(公告)号：US20190252198A1

公开(公告)日：2019-08-15

申请号：US16315812

申请日：2017-07-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinya MORIKITA ,  Takanori BANSE ,  Yuta SEYA ,  Ryosuke NIITSUMA

IPC: H01L21/3065 ,  H01L21/308 ,  H01L21/311

Abstract: A method MT according to an embodiment provides a technique capable of controlling a pattern shape during processing of an organic film and the like. A wafer W as an object to which the method MT in the embodiment is applied includes an etching target layer EL, an organic film OL, and a mask ALM, the organic film OL is constituted by a first region VL1 and a second region VL2, the mask ALM is provided on the first region VL1, the first region VL1 is provided on the second region VL2, and the second region VL2 is provided on the etching target layer EL. In the method MT, the first region VL1 is etched to reach the second region VL2 by generating a plasma of a gas containing nitrogen gas in the processing container 12 in which the wafer W is accommodated, a mask OLM1 is formed from the first region VL1, a protective film SX is conformally formed on a side surface SF of the mask OLM1, the second region VL2 is etched to reach the etching target layer EL to form a mask OLM2 from the second region VL2.

公开(公告)号：US20250157799A1

公开(公告)日：2025-05-15

申请号：US19021566

申请日：2025-01-15

Applicant: Tokyo Electron Limited

Inventor： Mohd Fairuz BIN BUDIMAN ,  Shinya MORIKITA

IPC: H01J37/32

Abstract: A monitoring method includes determining first power provided to heaters each located in a corresponding zone of a plurality of zones in a substrate support in a chamber. The first power is provided when plasma is generated in the chamber and each zone is controlled to be at a constant temperature with the corresponding heater in the zone. The monitoring method further includes determining a heat flux from the plasma to each zone. The heat flux from the plasma to each zone is obtained by dividing a difference between second power and the first power provided to the corresponding heater in the zone by an area of the zone. The second power to the corresponding heater in the zone is provided when no plasma is generated in the chamber and the zone is controlled to be at the constant temperature with the corresponding heater in the zone.

公开(公告)号：US20240162045A9

公开(公告)日：2024-05-16

申请号：US17842791

申请日：2022-06-17

Applicant: Tokyo Electron Limited

Inventor： Fumiya TAKATA ,  Shota YOSHIMURA ,  Shinya MORIKITA

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02126 ,  H01J37/32091

Abstract: An etching method includes: preparing a substrate including a first region containing silicon and nitrogen, and a second region containing silicon and oxygen; and etching the second region while firming a tungsten-containing protective layer on the first region, by exposing the first and second regions to plasma generated from a processing gas containing carbon, fluorine, and tungsten.

公开(公告)号：US20180233331A1

公开(公告)日：2018-08-16

申请号：US15896435

申请日：2018-02-14

Applicant: Tokyo Electron Limited

Inventor： Masanori HOSOYA ,  Soichiro KIMURA ,  Shinya MORIKITA

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/02 ,  C23C16/455

CPC classification number: H01J37/32183 ,  C23C16/26 ,  C23C16/4405 ,  C23C16/45523 ,  C23C16/509 ,  H01J37/32449 ,  H01J37/32862 ,  H01J2237/334 ,  H01L21/0234 ,  H01L21/31116 ,  H01L21/768 ,  H01L21/76897

Abstract: A plasma processing method is provided that includes applying a radio frequency power to an upper electrode of a chamber, and performing a coating process by supplying a coating gas, including a carbon-containing gas, to an interior of the chamber to generate a plasma from the supplied coating gas, and coating the interior of the chamber with a carbon film using the plasma generated from the coating gas. The plasma processing method further includes performing an etching process after the coating process by supplying an etching gas, including a fluorocarbon-containing gas, to the interior of the chamber to generate a plasma from the supplied etching gas and etching a first silicon-containing film that is arranged on a second silicon-containing film covering an electrode formed on a workpiece using the plasma generated from the etching gas.