公开(公告)号：US20210313187A1

公开(公告)日：2021-10-07

申请号：US17269602

申请日：2019-08-08

Applicant: Tokyo Electron Limited

Inventor： Kiyohito ITO ,  Shinya MORIKITA ,  Kensuke TANIGUCHI ,  Michiko NAKAYA ,  Masanobu HONDA

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/3213

Abstract: A treatment method is provided that includes an embedding step of embedding an organic film in an undercoat film in which a depression is formed; and an etching step of performing etching, after the embedding step, until at least a portion of a top of the undercoat film is exposed.

公开(公告)号：US20140284308A1

公开(公告)日：2014-09-25

申请号：US14219437

申请日：2014-03-19

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOKYO ELECTRON LIMITED

Inventor： Shoichiro MATSUYAMA ,  Akitaka SHIMIZU ,  Susumu NOGAMI ,  Kiyohito ITO ,  Tokuhisa OHIWA ,  Katsunori YAHASHI

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/32366 ,  H01J37/32568 ,  H01J2237/334

Abstract: There are provided a plasma etching method and a plasma etching apparatus, capable of suppressing occurrence of local bias in etching rate and suppressing occurrence of charge-up damage. The plasma etching method of etching a silicon layer of a substrate to be processed using the plasma etching apparatus sets the pressure in a processing chamber to 13.3 Pa or more and applies, to a lower electrode, a first high-frequency power with a first frequency and a second high-frequency power with a second frequency that is lower than the first frequency and is a frequency of 1 MHz or lower.

Abstract translation: 提供了等离子体蚀刻方法和等离子体蚀刻装置，其能够抑制蚀刻速度中的局部偏置的发生并且抑制充电损伤的发生。 使用等离子体蚀刻装置对待处理的基板的硅层进行蚀刻的等离子体蚀刻方法将处理室内的压力设定为13.3Pa以上，并向下部电极施加具有第一频率的第一高频电力 以及具有低于第一频率的第二频率并且是1MHz或更低的频率的第二高频功率。