公开(公告)号：US20210313187A1

公开(公告)日：2021-10-07

申请号：US17269602

申请日：2019-08-08

Applicant: Tokyo Electron Limited

Inventor： Kiyohito ITO ,  Shinya MORIKITA ,  Kensuke TANIGUCHI ,  Michiko NAKAYA ,  Masanobu HONDA

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/3213

Abstract: A treatment method is provided that includes an embedding step of embedding an organic film in an undercoat film in which a depression is formed; and an etching step of performing etching, after the embedding step, until at least a portion of a top of the undercoat film is exposed.

公开(公告)号：US20210320011A1

公开(公告)日：2021-10-14

申请号：US17357049

申请日：2021-06-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihide KIHARA ,  Toru HISAMATSU ,  Kensuke TANIGUCHI ,  Yoshinari HATAZAKI

IPC: H01L21/3065 ,  H01J37/32

Abstract: A plasma processing apparatus which forms a first film on a pattern formed on a substrate having dense and coarse areas, and then performs sputtering or etching on the first film.