公开(公告)号：US09929714B2

公开(公告)日：2018-03-27

申请号：US14251637

申请日：2014-04-13

Applicant: Texas Instruments Incorporated

Inventor： Stuart M. Jacobsen ,  Rick L. Wise ,  Maria Wang ,  Ricky Alan Jackson ,  Nicholas S. Dellas ,  Django Earl Trombley

IPC: H03H9/05 ,  H03H9/02 ,  H03H9/17

CPC classification number: H03H9/02102 ,  H03H9/175

Abstract: The dominant frequency of a solidly mounted resonator (100/280/300/400) is substantially increased by reducing the thickness of each layer of each Bragg acoustic reflector (112/160/224/274) to have a thickness than is substantially equal to one-quarter of the wavelength of a frequency that is a higher harmonic resonant frequency of the fundamental resonant frequency of the solidly mounted resonator (100/280/300/400).

公开(公告)号：US09660603B2

公开(公告)日：2017-05-23

申请号：US14682651

申请日：2015-04-09

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Elizabeth Costner Stewart ,  Nicholas S. Dellas

IPC: H03H3/02

CPC classification number: H03H3/02 ,  H03H2003/025

Abstract: A method of fabricating a sloped termination of a molybdenum layer includes providing the molybdenum layer and applying a photo resist material to the molybdenum layer. The photo resist material is exposed under a defocus condition to generate a resist mask having an edge portion. The molybdenum layer is etched at least at the edge portion of the resist mask to result in a sloped termination of the molybdenum layer.

公开(公告)号：US11742390B2

公开(公告)日：2023-08-29

申请号：US17085558

申请日：2020-10-30

Applicant: Texas Instruments Incorporated

Inventor： Qhalid R S Fareed ,  Dong Seup Lee ,  Nicholas S. Dellas

IPC: H01L29/15 ,  H01L21/02

CPC classification number: H01L29/151 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/02532

Abstract: Fabrication methods and gallium nitride transistors, in which an electronic device includes a substrate, a buffer structure, a hetero-epitaxy structure over the buffer structure, and a transistor over or in the hetero-epitaxy structure. In one example, the buffer structure has an extrinsically carbon doped gallium nitride layer over a dual superlattice stack or over a multilayer composition graded aluminum gallium nitride stack, and a silicon nitride cap layer over the hetero-epitaxy structure.

公开(公告)号：US20210067126A1

公开(公告)日：2021-03-04

申请号：US16553518

申请日：2019-08-28

Applicant: Texas Instruments Incorporated

Inventor： Nicholas S. Dellas ,  Brian Goodlin ,  Ricky Jackson

IPC: H03H9/00 ,  H03H9/17 ,  H01L21/02 ,  H01L33/10 ,  H01L33/46

Abstract: A method for creating a double Bragg mirror is provided. The method comprises providing a wafer having a plurality of bulk acoustic wave (BAW) devices at an intermediate stage of manufacturing. A first dielectric layer is deposited over the wafer. A plurality of as-deposited thicknesses of the dielectric layer are determined, each as-deposited thickness corresponding to one BAW device from the plurality of BAW devices. A corresponding trimmed dielectric layer over each of the BAW devices is formed by removing a portion of the dielectric layer over each of the BAW devices, with a thickness of the removed portion determined from a corresponding as-deposited thickness and a target thickness. A Bragg acoustic reflector that includes the corresponding trimmed dielectric layer is formed over each of the BAW devices.

公开(公告)号：US10009001B2

公开(公告)日：2018-06-26

申请号：US15349207

申请日：2016-11-11

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Maciej Blasiak ,  Nicholas S. Dellas ,  Brian E. Goodlin

IPC: H01L41/083 ,  H03H9/02 ,  H01L21/3213 ,  H01L21/3205 ,  H01L29/06 ,  H03H3/02 ,  H03H9/17

CPC classification number: H03H9/02015 ,  H01L21/32056 ,  H01L21/32136 ,  H01L21/32139 ,  H01L29/0657 ,  H01L29/41725 ,  H03H3/02 ,  H03H9/02102 ,  H03H9/02133 ,  H03H9/175 ,  H03H9/178 ,  H03H2003/025

Abstract: Method of forming a termination angle in a titanium tungsten layer include providing a titanium tungsten layer and applying a photo resist material to the titanium tungsten layer. The photo resist material is exposed under a defocus condition to generate a resist mask, wherein an edge of the exposed photo resist material corresponds to the sloped termination. The titanium tungsten layer is etched with an etching material, wherein the etching material at least partially etches the photo resist material exposed under the defocused condition, and wherein the etching results in the sloped termination in the titanium tungsten layer.

公开(公告)号：US20250040208A1

公开(公告)日：2025-01-30

申请号：US18910671

申请日：2024-10-09

Applicant: Texas Instruments Incorporated

Inventor： Qhalid RS Fareed ,  Dong Seup Lee ,  Nicholas S. Dellas

IPC: H01L29/15 ,  H01L21/02

Abstract: Fabrication methods and gallium nitride transistors, in which an electronic device includes a substrate, a buffer structure, a hetero-epitaxy structure over the buffer structure, and a transistor over or in the hetero-epitaxy structure. In one example, the buffer structure has an extrinsically carbon doped gallium nitride layer over a dual superlattice stack or over a multilayer composition graded aluminum gallium nitride stack, and a silicon nitride cap layer over the hetero-epitaxy structure.

公开(公告)号：US20230343829A1

公开(公告)日：2023-10-26

申请号：US18347234

申请日：2023-07-05

Applicant: Texas Instruments Incorporated

Inventor： Qhalid RS Fareed ,  Dong Seup Lee ,  Nicholas S. Dellas

IPC: H01L29/15 ,  H01L21/02

CPC classification number: H01L29/151 ,  H01L21/02458 ,  H01L21/02532 ,  H01L21/02507

Abstract: Fabrication methods and gallium nitride transistors, in which an electronic device includes a substrate, a buffer structure, a hetero-epitaxy structure over the buffer structure, and a transistor over or in the hetero-epitaxy structure. In one example, the buffer structure has an extrinsically carbon doped gallium nitride layer over a dual superlattice stack or over a multilayer composition graded aluminum gallium nitride stack, and a silicon nitride cap layer over the hetero-epitaxy structure.

公开(公告)号：US09524881B2

公开(公告)日：2016-12-20

申请号：US14700937

申请日：2015-04-30

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Maciej Blasiak ,  Nicholas S. Dellas ,  Brian E. Goodlin

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/3213 ,  H01L21/3205 ,  H01L29/06

CPC classification number: H03H9/02015 ,  H01L21/32056 ,  H01L21/32136 ,  H01L21/32139 ,  H01L29/0657 ,  H01L29/41725 ,  H03H3/02 ,  H03H9/02102 ,  H03H9/02133 ,  H03H9/175 ,  H03H9/178 ,  H03H2003/025

Abstract: Method of forming a termination angle in a titanium tungsten layer include providing a titanium tungsten layer and applying a photo resist material to the titanium tungsten layer. The photo resist material is exposed under a defocus condition to generate a resist mask, wherein an edge of the exposed photo resist material corresponds to the sloped termination. The titanium tungsten layer is etched with an etching material, wherein the etching material at least partially etches the photo resist material exposed under the defocused condition, and wherein the etching results in the sloped termination in the titanium tungsten layer.

Abstract translation: 在钛钨层中形成终止角的方法包括提供钛钨层并将抗蚀剂材料施加到钛钨层上。 光抗蚀剂材料在散焦条件下曝光以产生抗蚀剂掩模，其中曝光的光刻胶材料的边缘对应于倾斜端接。 用蚀刻材料蚀刻钛钨层，其中蚀刻材料至少部分地蚀刻在散焦状态下暴露的光致抗蚀剂材料，并且其中蚀刻导致钛钨层中的倾斜终止。

公开(公告)号：US20160322235A1

公开(公告)日：2016-11-03

申请号：US14700937

申请日：2015-04-30

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Maciej Blasiak ,  Nicholas S. Dellas ,  Brian E. Goodlin

IPC: H01L21/3213 ,  H01L29/06 ,  H01L21/3205

CPC classification number: H03H9/02015 ,  H01L21/32056 ,  H01L21/32136 ,  H01L21/32139 ,  H01L29/0657 ,  H01L29/41725 ,  H03H3/02 ,  H03H9/02102 ,  H03H9/02133 ,  H03H9/175 ,  H03H9/178 ,  H03H2003/025

Abstract: Method of forming a termination angle in a titanium tungsten layer include providing a titanium tungsten layer and applying a photo resist material to the titanium tungsten layer. The photo resist material is exposed under a defocus condition to generate a resist mask, wherein an edge of the exposed photo resist material corresponds to the sloped termination. The titanium tungsten layer is etched with an etching material, wherein the etching material at least partially etches the photo resist material exposed under the defocused condition, and wherein the etching results in the sloped termination in the titanium tungsten layer.

Abstract translation: 在钛钨层中形成终止角的方法包括提供钛钨层并将抗蚀剂材料施加到钛钨层上。 光抗蚀剂材料在散焦条件下曝光以产生抗蚀剂掩模，其中曝光的光刻胶材料的边缘对应于倾斜端接。 用蚀刻材料蚀刻钛钨层，其中蚀刻材料至少部分地蚀刻在散焦状态下暴露的光致抗蚀剂材料，并且其中蚀刻导致钛钨层中的倾斜终止。

公开(公告)号：US12142639B2

公开(公告)日：2024-11-12

申请号：US18347234

申请日：2023-07-05

Applicant: Texas Instruments Incorporated

Inventor： Qhalid R S Fareed ,  Dong Seup Lee ,  Nicholas S. Dellas

IPC: H01L29/15 ,  H01L21/02

Abstract: Fabrication methods and gallium nitride transistors, in which an electronic device includes a substrate, a buffer structure, a hetero-epitaxy structure over the buffer structure, and a transistor over or in the hetero-epitaxy structure. In one example, the buffer structure has an extrinsically carbon doped gallium nitride layer over a dual superlattice stack or over a multilayer composition graded aluminum gallium nitride stack, and a silicon nitride cap layer over the hetero-epitaxy structure.