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公开(公告)号：US10396746B2
公开(公告)日：2019-08-27
申请号：US14970676
申请日：2015-12-16
Applicant: Texas Instruments Incorporated
Inventor： Byron Neville Burgess , William Robert Krenik , Stuart M. Jacobsen
Abstract: A method of forming an integrated resonator apparatus includes depositing alternating dielectric layers of lower and higher acoustic impedance materials over a substrate. First and second resonator electrodes are formed over the alternating dielectric layers, with a piezoelectric layer located between the first and second resonator electrodes. A mass bias is formed over the first and second resonator electrodes. The mass bias, first and second electrodes, piezoelectric layer, and alternating dielectric layers may be encapsulated with a plastic mold fill.
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公开(公告)号：US09929714B2
公开(公告)日：2018-03-27
申请号：US14251637
申请日：2014-04-13
Applicant: Texas Instruments Incorporated
Inventor： Stuart M. Jacobsen , Rick L. Wise , Maria Wang , Ricky Alan Jackson , Nicholas S. Dellas , Django Earl Trombley
CPC classification number: H03H9/02102 , H03H9/175
Abstract: The dominant frequency of a solidly mounted resonator (100/280/300/400) is substantially increased by reducing the thickness of each layer of each Bragg acoustic reflector (112/160/224/274) to have a thickness than is substantially equal to one-quarter of the wavelength of a frequency that is a higher harmonic resonant frequency of the fundamental resonant frequency of the solidly mounted resonator (100/280/300/400).
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公开(公告)号：US20170217759A1
公开(公告)日：2017-08-03
申请号：US15463246
申请日：2017-03-20
Applicant: Texas Instruments Incorporated
Inventor： Stuart M. Jacobsen , Wei-Yan Shih
CPC classification number: B81B7/0051 , B81B2207/07 , B81B2207/097 , B81C1/00333 , B81C1/00349 , B81C1/00396 , B81C1/00523 , B81C1/00666
Abstract: A MEMS device is formed by applying a lower polymer film to top surfaces of a common substrate containing a plurality of MEMS devices, and patterning the lower polymer film to form a headspace wall surrounding components of each MEMS device. Subsequently an upper polymer dry film is applied to top surfaces of the headspace walls and patterned to form headspace caps which isolate the components of each MEMS device. Subsequently, the MEMS devices are singulated to provide separate MEMS devices.
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公开(公告)号：US12091311B2
公开(公告)日：2024-09-17
申请号：US15463246
申请日：2017-03-20
Applicant: Texas Instruments Incorporated
Inventor： Stuart M. Jacobsen , Wei-Yan Shih
CPC classification number: B81B7/0051 , B81C1/00333 , B81C1/00349 , B81C1/00396 , B81C1/00523 , B81C1/00666 , B81B2207/07 , B81B2207/097
Abstract: A MEMS device is formed by applying a lower polymer film to top surfaces of a common substrate containing a plurality of MEMS devices, and patterning the lower polymer film to form a headspace wall surrounding components of each MEMS device. Subsequently an upper polymer dry film is applied to top surfaces of the headspace walls and patterned to form headspace caps which isolate the components of each MEMS device. Subsequently, the MEMS devices are singulated to provide separate MEMS devices.
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公开(公告)号：US09630835B2
公开(公告)日：2017-04-25
申请号：US14467616
申请日：2014-08-25
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Stuart M. Jacobsen , Wei-Yan Shih
CPC classification number: B81B7/0051 , B81B2207/07 , B81B2207/097 , B81C1/00333 , B81C1/00349 , B81C1/00396 , B81C1/00523 , B81C1/00666
Abstract: A MEMS device is formed by applying a lower polymer film to top surfaces of a common substrate containing a plurality of MEMS devices, and patterning the lower polymer film to form a headspace wall surrounding components of each MEMS device. Subsequently an upper polymer dry film is applied to top surfaces of the headspace walls and patterned to form headspace caps which isolate the components of each MEMS device. Subsequently, the MEMS devices are singulated to provide separate MEMS devices.
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Patent Agency Ranking
公开(公告)号：US09503047B2
公开(公告)日：2016-11-22
申请号：US14692481
申请日：2015-04-21
Applicant: Texas Instruments Incorporated
Inventor： Stuart M. Jacobsen , Brian Goodlin
CPC classification number: H03H9/17 , H01L41/047 , H01L41/0805 , H03B5/326 , H03B28/00 , H03B2200/0022 , H03H9/02055 , H03H9/131 , H03H9/175
Abstract: A bulk acoustic wave (BAW) resonator includes a substrate having a top side surface and a bottom side surface. A Bragg mirror is on the top side surface of the substrate. A bottom electrode layer is on the Bragg mirror, and a piezoelectric layer is on the bottom electrode layer. A top dielectric layer is on the piezoelectric layer, and a top electrode layer is on the top dielectric layer. The bottom side surface of the substrate has a surface roughness of at least 1 μm root mean square (RMS).
Abstract translation: 体声波（BAW）谐振器包括具有顶侧表面和底侧表面的基底。 布拉格反射镜位于基板的顶侧表面。 底部电极层位于布拉格反射镜上，压电层位于底部电极层上。 顶部电介质层位于压电层上，顶部电极层位于顶部电介质层上。 基板的底面具有至少1μm的均方根（RMS）的表面粗糙度。
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公开(公告)号：US20160052781A1
公开(公告)日：2016-02-25
申请号：US14467616
申请日：2014-08-25
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Stuart M. Jacobsen , Wei-Yan Shih
CPC classification number: B81B7/0051 , B81B2207/07 , B81B2207/097 , B81C1/00333 , B81C1/00349 , B81C1/00396 , B81C1/00523 , B81C1/00666
Abstract: A MEMS device is formed by applying a lower polymer film to top surfaces of a common substrate containing a plurality of MEMS devices, and patterning the lower polymer film to form a headspace wall surrounding components of each MEMS device. Subsequently an upper polymer dry film is applied to top surfaces of the headspace walls and patterned to form headspace caps which isolate the components of each MEMS device. Subsequently, the MEMS devices are singulated to provide separate MEMS devices.
Abstract translation: 通过将下部聚合物膜施加到包含多个MEMS器件的公共衬底的顶表面上并形成下部聚合物膜以形成围绕每个MEMS器件的部件的顶部空间壁来形成MEMS器件。 随后，将上部聚合物干膜施加到顶部空间壁的顶表面并且被图案化以形成隔离每个MEMS器件的部件的顶部空间盖。 随后，将MEMS器件分开以提供单独的MEMS器件。
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公开(公告)号：US09129886B2
公开(公告)日：2015-09-08
申请号：US13670735
申请日：2012-11-07
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Stuart M. Jacobsen , Sridhar Ramaswamy , William Robert Krenik
CPC classification number: H01L27/20 , H01L41/29 , H03H9/0542 , H03H9/175
Abstract: A semiconductor device comprises a semiconductor wafer; a piezoelectric resonator formed on the wafer, and an active circuit also formed on the wafer. The active circuit (e.g., a frequency divider) is electrically connected to the piezoelectric resonator.
Abstract translation: 半导体器件包括半导体晶片; 形成在晶片上的压电谐振器和还形成在晶片上的有源电路。 有源电路（例如，分频器）电连接到压电谐振器。
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公开(公告)号：US11799436B2
公开(公告)日：2023-10-24
申请号：US16551757
申请日：2019-08-27
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Byron Neville Burgess , William Robert Krenik , Stuart M. Jacobsen
CPC classification number: H03H3/02 , H03H3/04 , H03H9/02102 , H03H9/02149 , H03H9/1007 , H03H9/1057 , H03H9/175 , H01L23/3107 , H01L23/3171 , H01L23/49838 , H03H9/0542 , H03H2003/023 , H03H2003/027 , Y10T29/42 , Y10T29/49171 , Y10T29/49172
Abstract: A method of forming a resonator includes forming top and bottom dielectric structures over a substrate. A piezoelectric layer is formed between the top and bottom dielectric structures. A bottom electrode is formed between the piezoelectric layer and the bottom dielectric structure, and a top electrode is formed between the piezoelectric layer and the top dielectric structure. A metal layer is formed over the top dielectric structure and is patterned, thereby forming a first contact pad making electrical contact to the top electrode, a second contact pad making electrical contact with the bottom electrode, and a mass bias located over the top dielectric structure.
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公开(公告)号：US10009008B2
公开(公告)日：2018-06-26
申请号：US15291230
申请日：2016-10-12
Applicant: Texas Instruments Incorporated
Inventor： Stuart M. Jacobsen , Brian Goodlin
CPC classification number: H03H9/17 , H01L41/047 , H01L41/0805 , H03B5/326 , H03B28/00 , H03B2200/0022 , H03H9/02055 , H03H9/131 , H03H9/175
Abstract: A bulk acoustic wave (BAW) resonator includes a substrate having a top side surface and a bottom side surface. A Bragg mirror is on the top side surface of the substrate. A bottom electrode layer is on the Bragg mirror, and a piezoelectric layer is on the bottom electrode layer. A top dielectric layer is on the piezoelectric layer, and a top electrode layer is on the top dielectric layer. The bottom side surface of the substrate has a surface roughness of at least 1 μm root mean square (RMS).
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