公开(公告)号：US10680056B1

公开(公告)日：2020-06-09

申请号：US16232653

申请日：2018-12-26

Applicant: Texas Instruments Incorporated

Inventor： Bhaskar Srinivasan ,  Brian Goodlin ,  Dhishan Kande

IPC: H01L21/00 ,  H01L49/02 ,  H01L21/70 ,  H01L21/66 ,  H01C17/24 ,  H01L21/822 ,  H01C7/00

Abstract: A method of fabricating an integrated circuit (IC) includes providing a substrate having a semiconductor surface layer comprising an unpatterned resistive layer. Measurements are obtained of a characteristic of the unpatterned resistive layer at each of a plurality of locations over the substrate. The unpatterned resistive layer is modified, such as by targeted removal of layer material, in response to the measurements such that the measured characteristic is more uniform across the substrate. A resistor on the IC is defined from the unpatterned resistive layer after the modifying.

公开(公告)号：US20210067126A1

公开(公告)日：2021-03-04

申请号：US16553518

申请日：2019-08-28

Applicant: Texas Instruments Incorporated

Inventor： Nicholas S. Dellas ,  Brian Goodlin ,  Ricky Jackson

IPC: H03H9/00 ,  H03H9/17 ,  H01L21/02 ,  H01L33/10 ,  H01L33/46

Abstract: A method for creating a double Bragg mirror is provided. The method comprises providing a wafer having a plurality of bulk acoustic wave (BAW) devices at an intermediate stage of manufacturing. A first dielectric layer is deposited over the wafer. A plurality of as-deposited thicknesses of the dielectric layer are determined, each as-deposited thickness corresponding to one BAW device from the plurality of BAW devices. A corresponding trimmed dielectric layer over each of the BAW devices is formed by removing a portion of the dielectric layer over each of the BAW devices, with a thickness of the removed portion determined from a corresponding as-deposited thickness and a target thickness. A Bragg acoustic reflector that includes the corresponding trimmed dielectric layer is formed over each of the BAW devices.

公开(公告)号：US10009008B2

公开(公告)日：2018-06-26

申请号：US15291230

申请日：2016-10-12

Applicant: Texas Instruments Incorporated

Inventor： Stuart M. Jacobsen ,  Brian Goodlin

IPC: H03H9/17 ,  H01L41/08 ,  H01L41/047 ,  H03B28/00 ,  H03H9/02 ,  H03B5/32 ,  H03H9/13

CPC classification number: H03H9/17 ,  H01L41/047 ,  H01L41/0805 ,  H03B5/326 ,  H03B28/00 ,  H03B2200/0022 ,  H03H9/02055 ,  H03H9/131 ,  H03H9/175

Abstract: A bulk acoustic wave (BAW) resonator includes a substrate having a top side surface and a bottom side surface. A Bragg mirror is on the top side surface of the substrate. A bottom electrode layer is on the Bragg mirror, and a piezoelectric layer is on the bottom electrode layer. A top dielectric layer is on the piezoelectric layer, and a top electrode layer is on the top dielectric layer. The bottom side surface of the substrate has a surface roughness of at least 1 μm root mean square (RMS).

公开(公告)号：US20240413242A1

公开(公告)日：2024-12-12

申请号：US18429228

申请日：2024-01-31

Applicant: Texas Instruments Incorporated

Inventor： Henry Litzmann Edwards ,  Brian Goodlin ,  Sujatha Sampath

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/16 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A microelectronic device, e.g. an integrated circuit, includes first and second doped semiconductor regions over a semiconductor substrate. A semiconductor nanosheet layer is connected between the first and second semiconductor regions and has a bandgap greater than 1.5 eV. In some examples such a device is implemented as an LDMOS transistor. A method of forming the device includes forming a trench in a semiconductor substrate having a first conductivity type. A semiconductor nanosheet stack is formed within the trench, the stack including a semiconductor nanosheet layer and a sacrificial layer. Source and drain regions having an opposite second conductivity type are formed extending into the semiconductor nanosheet stack. The sacrificial layer between the source region and the drain region is removed, and the semiconductor nanosheet layer is annealed. A gate dielectric layer is formed on the semiconductor nanosheet layer, and a gate conductor is formed on the gate dielectric layer.

公开(公告)号：US20240105450A1

公开(公告)日：2024-03-28

申请号：US18090766

申请日：2022-12-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Yoganand Saripalli ,  Russell Fields ,  Brian Goodlin ,  Qhalid Fareed

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/44 ,  C30B25/08 ,  C30B29/40 ,  H01J37/32

CPC classification number: H01L21/02661 ,  C23C16/301 ,  C23C16/4405 ,  C30B25/08 ,  C30B29/40 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02664 ,  H01J37/32816 ,  H01J2237/332

Abstract: A Group III-V semiconductor device and a method of fabricating the same including an in-situ surface passivation layer. A two-stage cleaning process may be effectuated for cleaning a reactor chamber prior to growing one or more epitaxial layers and forming subsequent surface passivation layers, wherein a first cleaning process may involve a remotely generated plasma containing fluorine-based reactive species for removing SiXNY residual material accumulated in the reactor chamber and/or over any components disposed therein.

公开(公告)号：US20230411452A1

公开(公告)日：2023-12-21

申请号：US17829009

申请日：2022-05-31

Applicant: Texas Instruments Incorporated

Inventor： Sheldon Douglas Haynie ,  Alexei Sadovnikov ,  Brian Goodlin

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0657 ,  H01L29/66795 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/7853

Abstract: A method forms a semiconductor device with a substrate including semiconductor material formed to include plural corrugation members, each member including a top surface, and a first and second sidewall extending from the top surface to a lower surface. The method forms a contiguous transistor source extending through a first volume of each of the corrugation members and a first lower surface volume and a contiguous transistor drain extending through a second volume of each of the corrugation members and a second lower surface volume. Both source and drain are formed by initially diffusing a dopant in a uniform manner normal to various portions, some non-coplanar, of the source and drain, respectively.

公开(公告)号：US20230178372A1

公开(公告)日：2023-06-08

申请号：US17545209

申请日：2021-12-08

Applicant: Texas Instruments Incorporated

Inventor： Bhaskar Srinivasan ,  Walter Scott Idol ,  Ming-Yeh Chuang ,  Brian Goodlin

IPC: H01L21/225 ,  H01L29/66

CPC classification number: H01L21/2251 ,  H01L29/66681 ,  H01L29/66795

Abstract: A fin field-effect transistor (“FinFET”) semiconductor device and method of forming the same. In one example, a semiconductor fin is formed over a semiconductor substrate. A conformal dielectric layer is formed on a top and side surfaces of the fin. A doped semiconductor layer is formed over the conformal dielectric layer, the doped semiconductor layer including a dopant. The doped semiconductor layer is heated thereby driving the dopant through the conformal dielectric layer and forming a doped region of the fin.

公开(公告)号：US11146230B2

公开(公告)日：2021-10-12

申请号：US16553518

申请日：2019-08-28

Applicant: Texas Instruments Incorporated

Inventor： Nicholas S Dellas ,  Brian Goodlin ,  Ricky Jackson

IPC: H03H9/00 ,  H03H9/17 ,  H01L33/46 ,  H01L33/10 ,  H01L21/02

Abstract: A method for creating a double Bragg mirror is provided. The method comprises providing a wafer having a plurality of bulk acoustic wave (BAW) devices at an intermediate stage of manufacturing. A first dielectric layer is deposited over the wafer. A plurality of as-deposited thicknesses of the dielectric layer are determined, each as-deposited thickness corresponding to one BAW device from the plurality of BAW devices. A corresponding trimmed dielectric layer over each of the BAW devices is formed by removing a portion of the dielectric layer over each of the BAW devices, with a thickness of the removed portion determined from a corresponding as-deposited thickness and a target thickness. A Bragg acoustic reflector that includes the corresponding trimmed dielectric layer is formed over each of the BAW devices.

公开(公告)号：US20200274514A1

公开(公告)日：2020-08-27

申请号：US16284831

申请日：2019-02-25

Applicant: Texas Instruments Incorporated

Inventor： Ting-Ta Yen ,  Brian Goodlin ,  Ricky Alan Jackson ,  Nicholas Stephen Dellas

IPC: H03H9/02 ,  G06F17/50 ,  H03H3/02 ,  H03H9/13 ,  H03H9/17

Abstract: A micromechanical system (MEMS) acoustic wave resonator is formed on a base substrate. A piezoelectric member is mounted on the base substrate. The piezoelectric member has a first electrode covering a first surface of the piezoelectric member and a second electrode covering a second surface of the piezoelectric member opposite the first electrode, the second electrode being bounded by a perimeter edge. A first guard ring is positioned on the second electrode spaced apart from the perimeter edge of the second electrode.

公开(公告)号：US10651817B2

公开(公告)日：2020-05-12

申请号：US15857906

申请日：2017-12-29

Applicant: Texas Instruments Incorporated

Inventor： Ting-Ta Yen ,  Brian Goodlin ,  Ricky Alan Jackson ,  Nicholas Stephen Dellas

IPC: H03H9/02 ,  B81C1/00 ,  B81B7/00 ,  H03H3/007 ,  H03H9/17 ,  H03H9/05 ,  H03H9/10 ,  H03H9/09

Abstract: In described examples of a micromechanical system (MEMS), a rigid cantilevered platform is formed on a base substrate. The cantilevered platform is anchored to the base substrate by only a single anchor point. A MEMS resonator is formed on the cantilevered platform.