公开(公告)号：US5012083A

公开(公告)日：1991-04-30

申请号：US539958

申请日：1990-06-18

Applicant: Tak-Kin Chu

Inventor： Tak-Kin Chu

IPC: H01L31/101 ,  H01L31/108 ,  H01L31/109

CPC classification number: H01L31/109 ,  H01L31/101 ,  H01L31/108 ,  Y10S257/912

Abstract: An infrared radiation detector having a first semiconductor layer depositedn a substrate to form a diode junction with an overlay contact, is rendered more effective to detect long wavelength radiation by deposit of a second semiconductor layer between the first layer and the overlay contact in a heterojunction arrangement. The semiconductor materials are selected so as to separate radiation absorbing and electrical functions respectively performed within the two layers and to produce an enhanced output across the diode junction between the first layer and the overlay contact.

Abstract translation: 具有沉积在衬底上以与覆盖接触形成二极管结的第一半导体层的红外辐射检测器通过在异质结中的第一层和覆盖接触之间沉积第二半导体层来更有效地检测长波长辐射 安排。 选择半导体材料以分离在两层内分别执行的辐射吸收和电功能，并且在第一层和覆盖层接触之间的二极管结上产生增强的输出。

公开(公告)号：US5047622A

公开(公告)日：1991-09-10

申请号：US645960

申请日：1991-01-22

Applicant: Tak-Kin Chu

Inventor： Tak-Kin Chu

IPC: H01L31/101 ,  H01L31/108 ,  H01L31/109

CPC classification number: H01L31/101 ,  H01L31/108 ,  H01L31/109

Abstract: An infrared radiation detector having a first semiconductor layer depositedn a substrate to form a diode junction with an overlay contact, is rendered more effective to detect long wavelength radiation by deposit of a second semiconductor layer between the first layer and the overlay contact in a heterojunction arrangement. The semiconductor materials are selected so as to separate radiation absorbing and electrical functions respectively performed within the two layers and to produce an enhanced output across the diode junction between the first layer and the overlay contact.

公开(公告)号：US4853339A

公开(公告)日：1989-08-01

申请号：US224962

申请日：1988-07-27

Applicant: Tak-Kin Chu ,  Francisco Santiago

Inventor： Tak-Kin Chu ,  Francisco Santiago

IPC: H01L21/363 ,  H01L31/032 ,  H01L31/108 ,  H01L31/18

CPC classification number: H01L31/108 ,  H01L21/0242 ,  H01L21/02551 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/0324 ,  H01L31/18 ,  Y10S148/037 ,  Y10S148/063 ,  Y10S148/072 ,  Y10S148/14 ,  Y10S438/93

Abstract: In a process of preparing an infrared sensitive photodiode comprising the eps of(1) forming by vacuum deposition an epitaxial layer of a semiconductor alloy material selected from the group consisting of PbS, PbSe, PbTe, PbS.sub.x Se.sub.1-x, PbS.sub.x Te.sub.1-x, PbSe.sub.x Te.sub.1-x, Pb.sub.y Sn.sub.1-y S, Pb.sub.y Sn.sub.1-y Se, Pb.sub.y Sn.sub.1-y Te, Pb.sub.y Sn.sub.1-y S.sub.x, Pb.sub.y Sn.sub.1-y S.sub.x Te.sub.1-x, Pb.sub.y Sn.sub.1-y Se.sub.x Te.sub.1-x, Pb.sub.z Cd.sub.1-z S, Pb.sub.z Cd.sub.1-z Se, Pb.sub.z Cd.sub.1-z Te, Pb.sub.z Cd.sub.1-z S.sub.x Se.sub.1-x, Pb.sub.z Cd.sub.1-z S.sub.x Te.sub.1-x, and Pb.sub.z Cd.sub.1-z Se.sub.x Te.sub.1-x, wherein 0

公开(公告)号：US5389812A

公开(公告)日：1995-02-14

申请号：US230461

申请日：1994-04-20

Applicant: Carmen I. Huber ,  Tito E. Huber ,  Tak-Kin Chu ,  Nicholas Caviris

Inventor： Carmen I. Huber ,  Tito E. Huber ,  Tak-Kin Chu ,  Nicholas Caviris

IPC: G02F1/135 ,  H01L27/144 ,  H01L31/0232 ,  H01L31/0272 ,  H01L27/14 ,  H01L31/00

CPC classification number: G02F1/1354 ,  H01L27/144 ,  H01L31/0232 ,  H01L31/0272 ,  G02F2001/1352 ,  Y10S148/05 ,  Y10S148/107

Abstract: Photoconductive semiconductor material is injected into narrow and closelypaced cylindrical channels in an insulating matrix plate to form pixel elements of a high resolution photodetector array. A transparent conductive layer is deposited on one surface of the photoconductor array while light reflecting pads are formed on the elements at the opposite surface. Subsequently, a layer of light modulating material and a transparent conductive layer are deposited on the opposite surface to obtain a high resolution spatial light modulator.

Abstract translation: 将光导半导体材料注入到绝缘矩阵板中的窄且紧密间隔的圆柱形通道中以形成高分辨率光电检测器阵列的像素元件。 在光电导体阵列的一个表面上沉积透明导电层，同时在相对表面上的元件上形成光反射垫。 随后，在相对的表面上沉积光调制材料层和透明导电层，以获得高分辨率的空间光调制器。

公开(公告)号：US5061973A

公开(公告)日：1991-10-29

申请号：US517013

申请日：1990-04-27

Applicant: Tak-Kin Chu

Inventor： Tak-Kin Chu

IPC: H01L29/22 ,  H01L29/225 ,  H01L29/24 ,  H01L29/861

CPC classification number: H01L29/861 ,  H01L29/2203 ,  H01L29/225 ,  H01L29/242

Abstract: The semiconductor materials of junction forming layers of a heterojunctiontructure are interfaced by a gap region that is graded by degree of alloying of those components of an interfacing material which are respectively compounded in the semiconductor materials of the junction forming layers having different bandgaps and band edges that are aligned by the grading of the interfacing gap region to selectively control rectifying junction characteristics.

Abstract translation: 异质结结构的结形成层的半导体材料由间隙区域相互连接，该间隙区域通过界面材料的那些组分的合金化程度分级，所述界面材料分别复合在具有不同带隙和带边缘的结形成层的半导体材料中 其通过接口间隙区域的分级对准以选择性地控制整流结特征。

公开(公告)号：US4996579A

公开(公告)日：1991-02-26

申请号：US464100

申请日：1983-02-04

Applicant: Tak-Kin Chu

Inventor： Tak-Kin Chu

IPC: H01L27/144 ,  H01L31/032 ,  H01L31/0352

CPC classification number: H01L27/1446 ,  H01L31/0324 ,  H01L31/035281 ,  Y02E10/50

Abstract: A single element infrared detector consisting of multiple layers of succeve epilayers of lead chalcogenides or their alloys with tin or cadmium to form two or more adjacent contiguous surfaces whereupon each surface is deposited with an ohmic contact. The multiple adjacent semiconductor surfaces are also each fitted or equipped with an non-ohmic contact that yields novel applications in terms of broad band and narrow scanning, particular when the epilayers are geometrically arranged to selectively allow the transmission of radiation to yield both broad band and narrow band responses concurrently so as to obtain a separate electrical signal from each adjacent contiguous semiconducting epilayer surface.

Abstract translation: 一种单元红外探测器，由多层连续的前导硫化物外延层或锡或镉合金组成，形成两个或多个相邻的连续表面，因此每个表面都被欧姆接触沉积。 多个相邻的半导体表面也各自配备或配备有非欧姆接触，其在宽带和窄扫描方面产生新的应用，特别是当外延层几何地布置成选择性地允许辐射的传输以产生宽带和 窄带响应同时进行，以便从每个相邻的连续半导体外延层表面获得单独的电信号。

公开(公告)号：US5059786A

公开(公告)日：1991-10-22

申请号：US519064

申请日：1990-05-04

Applicant: Tak-Kin Chu

Inventor： Tak-Kin Chu

IPC: G01J5/28 ,  G01J5/60 ,  H01L25/04 ,  H01L31/032

CPC classification number: H01L25/043 ,  G01J5/28 ,  G01J5/60 ,  H01L31/0324 ,  H01L2924/0002

Abstract: Radiation absorbing layers of epitaxially grown, photovoltaic materials areeposited in stacked relation on a substrate in alignment with a coincident axis of input radiation impinging on a common optically active surface area of a detector device formed by the stacked layers. Semi-insulating layers space the radiation absorbing layers to electrically separate the signal outputs respectively produced in response to impinging radiation limited to separate and distinct wavelengths within a common spectral range as a result of the interrelationships between bandgap energy properties of the layer materials.

Abstract translation: 外延生长的光伏材料的辐射吸收层以堆叠的关系沉积在基板上，与输入辐射的一致的轴对准，该输入辐射照射在由层叠层形成的检测器装置的公共光学活性表面区域上。 半绝缘层将辐射吸收层放置在空间上，以将由于层材料的带隙能量性质之间的相互关系的结果而分开的响应于入射辐射而产生的信号输出电分离成限定在共同光谱范围内的分离和不同波长。

公开(公告)号：US4962303A

公开(公告)日：1990-10-09

申请号：US371884

申请日：1989-06-27

Applicant: Tak-Kin Chu

Inventor： Tak-Kin Chu

IPC: H01L27/146 ,  H01L31/108

CPC classification number: H01L27/14649 ,  H01L31/108 ,  Y10S257/912

Abstract: An infrared image detector array is constructed by depositing a plurality non-contiguous strips of infrared radiation responsive, semiconductor material on one side of a base substrate. A contiguous metal semiconductor contact in then overlaid on the plurality of strips thereby forming an individual Schottky barrier detector element wherever the metal contact crosses one of the plurality of strips.

Abstract translation: 红外图像检测器阵列通过在基底基板的一侧上沉积多个不连续的红外辐射响应半导体材料而构成。 接着的金属半导体接触件然后覆盖在多个条上，从而在金属接触件穿过多个条带中的一个的任何位置上形成单独的肖特基势垒检测器元件。

公开(公告)号：US4900373A

公开(公告)日：1990-02-13

申请号：US381880

申请日：1989-07-19

Applicant: Tak-Kin Chu ,  Francisco Santiago

Inventor： Tak-Kin Chu ,  Francisco Santiago

IPC: H01L21/36 ,  H01L21/363 ,  H01L31/032 ,  H01L31/108

CPC classification number: H01L31/108 ,  H01L21/0242 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/0324

Abstract: In a process for preparing an infrared sentitive photodiode comprising theteps of:(1) forming by vacuum deposition an epitaxial layer of a semiconductor alloy material selected from the group consisting of PbSe, PbTe, PbSe.sub.x Te.sub.1-x, Pb.sub.y Sn.sub.1-y Se, Pb.sub.y Sn.sub.1-y Te, Pb.sub.y Sn.sub.1-y Se.sub.x Te.sub.1-x, Pb.sub.z Cd.sub.1-z Se, Pb.sub.z Cd.sub.1-z Te, and Pb.sub.z Cd.sub.1-z Se.sub.x Te.sub.1-x, wherein 0

公开(公告)号：US5690737A

公开(公告)日：1997-11-25

申请号：US454983

申请日：1995-05-31

Applicant: Francisco Santiago ,  Tak-Kin Chu ,  Michael Stumborg

Inventor： Francisco Santiago ,  Tak-Kin Chu ,  Michael Stumborg

IPC: C30B23/02 ,  C30B25/02 ,  C30B25/18

CPC classification number: C30B23/02 ,  C30B25/02 ,  C30B29/12

Abstract: A process for growing single crystal epitaxial BaF.sub.2 layers on gallium rsenide substrates by slowly reacting Ba, BaCl.sub.2, Bal.sub.2, BaBr.sub.2, BaF.sub.2 .cndot.BaCl.sub.2, BaF.sub.2 .cndot.BaBr.sub.2, BaF.sub.2 .cndot.BaI.sub.2, BaCl.sub.2 .cndot.BaBr.sub.2, Ba.sub.3 (GaF.sub.6).sub.2, BAH.sub.2, or BaO.sub.2 vapor with a clean, hot GaAs substrate at 500.degree. C. to 700.degree. C. in high vacuum until a uniform, thin (.about.12 .ANG.) layer of reaction product is formed and then vapor depositing BaF.sub.2 onto the reaction layer at room temperature to 400.degree. C. to form the single crystal, epitaxial BaF.sub.2 layer.

Abstract translation: 通过缓慢地将Ba，BaCl 2，Bal 2，BaBr 2，BaF 2 .BaCl 2，BaF 2 .BaBr 2，BaF 2 .BaI 2，BaCl 2 .BaBr 2，Ba 3（GaF 6）2，BAH 2或BaO 2缓慢地反应，在砷化镓衬底上生长单晶外延BaF 2层 在高真空下在500℃至700℃下用干净的热GaAs衬底蒸汽蒸发，直到形成均匀的薄（差的12安培）层的反应产物，然后在室温下将BaF 2气相沉积到反应层上 400℃，形成单晶，外延BaF2层。