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    Dynamically variable metamaterial lens and method
    2.
    发明授权
    Dynamically variable metamaterial lens and method 有权
    动态可变超材料透镜及方法

    公开(公告)号：US07864394B1

    公开(公告)日：2011-01-04

    申请号：US12420840

    申请日：2009-04-09

    Applicant: Donald W. Rule ,  Kevin A. Boulais ,  Francisco Santiago

    Inventor： Donald W. Rule ,  Kevin A. Boulais ,  Francisco Santiago

    IPC: G02F1/03

    CPC classification number: G02F1/0126 ,  B82Y20/00 ,  G02B1/007 ,  G02F1/01716 ,  G02F2202/30 ,  G02F2203/13 ,  H01Q15/0086

    Abstract: A dynamically variable lens is made from actively tunable electromagnetic metamaterial cells. The lens operates on electromagnetic radiation including: radio frequency waves, microwaves, teraherz waves, near infrared waves, infrared waves and visible waves. The focal length of the lens is changed at a selected frequency. In the alternative, the frequency of radiation operated on is changed as a function of time. A third alternative provides precise control of the index of refraction of the lens. The index of refraction is varied progressively across the lens from one edge to the opposite edge causing the radiation to be directed at an angle.

    Abstract translation: 动态可变透镜由主动可调电磁超材料单元制成。 透镜在电磁辐射下工作，包括：射频波，微波，太赫兹波，近红外波，红外波和可见波。 透镜的焦距以选定的频率改变。 另一方面，作为时间的函数改变了辐射的频率。 第三种方案可以精确控制镜片的折射率。 折射率逐渐地从透镜从一个边缘到另一个边缘变化，导致辐射以一定的角度被定向。

    Process for making electronic devices having a monolayer diffusion barrier
    5.
    发明授权
    Process for making electronic devices having a monolayer diffusion barrier 失效
    制造具有单层扩散阻挡层的电子器件的方法

    公开(公告)号：US06881669B2

    公开(公告)日：2005-04-19

    申请号：US09853925

    申请日：2001-05-09

    Applicant: Tak Kin Chu ,  Francisco Santiago ,  Kevin A. Boulais

    Inventor： Tak Kin Chu ,  Francisco Santiago ,  Kevin A. Boulais

    IPC: H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L21/44 ,  H01L21/4763

    CPC classification number: H01L21/76846 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An epitaxial barrier material provides not only a unique growth medium for growing single crystal structures of elemental metal thereon, but also provides an effective diffusion barrier at extremely thin thicknesses against migration of atoms from the metallization layer into an adjacent semiconductor substrate or low dielectric insulation layer. This invention is particularly advantageous for forming single crystal, transition metal conductor lines, contacts, filled trenches, and/or via plugs, and especially conductor structures based on transition metals of copper, silver, gold, or platinum. These metals are highly attractive for interconnect strategies on account of there respective low resistivity and high reliability characteristics. Processes for making the barrier film in a semiconductor device are also covered. The capability to use copper interconnect strategies coupled with the proviso of an extremely thin barrier film makes possible a significant increase in the component density and a corresponding reduction in the number of layers in large scale integrated circuits, as well as improved performance.

    Abstract translation: 外延阻挡材料不仅提供用于生长其上元素金属的单晶结构的独特的生长介质，而且还提供了非常薄的厚度上有效的扩散阻挡，以防止原子从金属化层迁移到相邻的半导体衬底或低介电绝缘层 。 本发明特别有利于形成单晶，过渡金属导体线，触点，填充沟槽和/或通孔塞，特别是基于铜，银，金或铂的过渡金属的导体结构。 由于存在相应的低电阻率和高可靠性特性，这些金属对于互连策略是非常有吸引力的。 在半导体器件中制造阻挡膜的工艺也被覆盖。 使用铜互连策略的能力与非常薄的阻挡膜的条件相结合使得成分密度显着增加，并且大规模集成电路中层数的相应减少以及改进的性能成为可能。

    Electronic devices with cesium barrier film and process for making same
    6.
    发明授权
    Electronic devices with cesium barrier film and process for making same 失效
    具有铯阻挡膜的电子器件及其制造方法

    公开(公告)号：US06720654B2

    公开(公告)日：2004-04-13

    申请号：US09137086

    申请日：1998-08-20

    Applicant: Michael F. Stumborg ,  Francisco Santiago ,  Tak Kin Chu ,  Kevin A. Boulais

    Inventor： Michael F. Stumborg ,  Francisco Santiago ,  Tak Kin Chu ,  Kevin A. Boulais

    IPC: H01L2348

    CPC classification number: C23C14/5806 ,  C23C14/025 ,  C23C14/18 ,  C23C16/0281 ,  C23C16/14 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76864 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing a precursor, such as a metal halide (e.g., BaF2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness. The extremely thin barrier film makes possible a significant increase in the component density and a corresponding reduction in the number of layers in large scale integrated circuits, as well as improved performance.

    Abstract translation: 一种具有阻挡膜的半导体器件，其包含由一个或多个单层形成的极薄膜，每个单层由金属原子的二维阵列组成。 在一个示例性方面，阻挡膜用于防止另一种材料（例如铜导体）的原子扩散到诸如半导体材料或绝缘材料的衬底中。 在制造半导体器件的一种模式中，阻挡膜通过将诸如金属卤化物（例如BaF 2）的前体沉积到衬底材料上而形成，然后在衬底材料上退火所得到的膜以除去所有的 临时异质外延膜的成分除了附着在基材表面上留下的单层金属原子外。 即使当阻挡膜的厚度仅为一个或几个时，沉积在阻挡膜上的导体（例如铜）也被有效地防止扩散到基底材料中。 极薄的阻挡膜使组件密度显着增加，并且大规模集成电路中层数的相应减少以及改进的性能成为可能。

    Electronic devices with composite atomic barrier film and process for making same
    7.
    发明授权
    Electronic devices with composite atomic barrier film and process for making same 失效
    具有复合原子屏障膜的电子器件及其制造方法

    公开(公告)号：US06566247B2

    公开(公告)日：2003-05-20

    申请号：US09899799

    申请日：2001-07-05

    Applicant: Michael F. Stumborg ,  Francisco Santiago ,  Tak Kin Chu ,  Kevin A. Boulais

    Inventor： Michael F. Stumborg ,  Francisco Santiago ,  Tak Kin Chu ,  Kevin A. Boulais

    IPC: H01L214763

    CPC classification number: C23C14/5806 ,  C23C14/025 ,  C23C14/18 ,  C23C16/0281 ,  C23C16/14 ,  H01L21/76843 ,  H01L21/76846

    Abstract: A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms, in which more than one type of metal atom is provided in barrier film. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing different types of precursors, such as metal halides (e.g., BaF2 and SrF2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness. The extremely thin barrier film makes possible a significant increase in the component density and a corresponding reduction in the number of layers in large scale integrated circuits, as well as improved performance.

    Abstract translation: 一种具有阻挡膜的半导体器件，该阻挡膜包括由一个或多个单层形成的极薄膜，每个单层由金属原子的二维阵列组成，其中在阻挡膜中提供多于一种类型的金属原子。 在一个示例性方面，阻挡膜用于防止另一种材料（例如铜导体）的原子扩散到诸如半导体材料或绝缘材料的衬底中。 在制造半导体器件的一种模式中，阻挡膜通过将不同类型的前体（例如金属卤化物（例如，BaF 2和SrF 2））沉积到衬底材料上而形成，然后在衬底材料上退火所得膜以除去 临时异质外延膜的所有成分除了附着在基底表面上留下的单层金属原子之外。 即使当阻挡膜的厚度仅为一个或几个时，沉积在阻挡膜上的导体（例如铜）也被有效地防止扩散到基底材料中。 极薄的阻挡膜使组件密度显着增加，并且大规模集成电路中层数的相应减少以及改进的性能成为可能。

    Gallium arsenide semiconductor devices fabricated with insulator layer
    8.
    发明授权
    Gallium arsenide semiconductor devices fabricated with insulator layer 失效
    用绝缘体层制造的砷化镓半导体器件

    公开(公告)号：US06208001B1

    公开(公告)日：2001-03-27

    申请号：US09197440

    申请日：1998-11-23

    Applicant: Francisco Santiago ,  Tak Kin Chu ,  Michael F. Stumborg ,  Kevin A. Boulais

    Inventor： Francisco Santiago ,  Tak Kin Chu ,  Michael F. Stumborg ,  Kevin A. Boulais

    IPC: H01L2978

    CPC classification number: H01L29/513 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/314 ,  H01L29/517 ,  H01L29/66522 ,  H01L29/66954

    Abstract: An insulator layer for single crystal gallium arsenide substrates in which the insulator layer is compliantly matched with the substrate and the insulator layer is free of defects causing surface roughness and crystalline defect problems which, otherwise, could impair device performance. To accomplish this, the insulator layer is formed on a gallium arsenide substrate as an integral composite or variegated structure including (a) a uniform homogenous film of Group IIa metal atoms attached directly onto a gallium arsenide substrate surface in the form of a monolayer, and (b) a single crystal epitaxial film of a Group IIa metal fluoride deposited on the monolayer.

    Abstract translation: 用于单晶砷化镓衬底的绝缘体层，其中绝缘体层与衬底和绝缘体层顺从地匹配，没有引起表面粗糙度和结晶缺陷问题的缺陷，否则会损害器件性能。 为了实现这一点，绝缘体层形成在砷化镓衬底上作为整体复合或杂色结构，包括（a）以单层形式直接附着在砷化镓衬底表面上的IIa族金属原子的均匀均匀的膜，以及 （b）沉积在单层上的IIa族金属氟化物的单晶外延膜。

    Process for making a semiconductor device with barrier film formation using a metal halide and products thereof
    9.
    发明授权
    Process for making a semiconductor device with barrier film formation using a metal halide and products thereof 失效
    使用金属卤化物制造具有阻挡膜形成的半导体器件及其制造方法

    公开(公告)号：US6077775A

    公开(公告)日：2000-06-20

    申请号：US137089

    申请日：1998-08-20

    Applicant: Michael F. Stumborg ,  Francisco Santiago ,  Tak Kin Chu ,  Kevin A. Boulais

    Inventor： Michael F. Stumborg ,  Francisco Santiago ,  Tak Kin Chu ,  Kevin A. Boulais

    IPC: C23C14/02 ,  C23C14/18 ,  C23C14/58 ,  C23C16/02 ,  C23C16/14 ,  H01L21/768 ,  H01L21/441 ,  H01L21/4763

    CPC classification number: C23C14/5806 ,  C23C14/025 ,  C23C14/18 ,  C23C16/0281 ,  C23C16/14 ,  H01L21/76843 ,  H01L21/76846

    Abstract: Process for making a semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing a metal halide as a precursor (e.g., BaF.sub.2 or SrF.sub.2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of a temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness. The extremely thin barrier film makes possible a significant increase in the component density and a corresponding reduction in the number of layers in large scale integrated circuits, as well as improved performance.

    Abstract translation: 制造具有阻挡膜的半导体器件的方法，该阻挡膜包括由一个或多个由金属原子的二维阵列组成的一个或多个单层形成的极薄膜。 在一个示例性方面，阻挡膜用于防止另一种材料（例如铜导体）的原子扩散到诸如半导体材料或绝缘材料的衬底中。 在制造半导体器件的一种模式中，通过将作为前体的金属卤化物（例如，BaF 2或SrF 2）沉积到衬底材料上，然后使所得到的膜在衬底材料上退火而形成阻挡膜，以除去所有的 临时异质外延膜的成分除了附着在基材表面上留下的单层金属原子外。 即使当阻挡膜的厚度仅为一个或几个时，沉积在阻挡膜上的导体（例如铜）也被有效地防止扩散到基底材料中。 极薄的阻挡膜使组件密度显着增加，并且大规模集成电路中层数的相应减少以及改进的性能成为可能。

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