公开(公告)号：US20240363450A1

公开(公告)日：2024-10-31

申请号：US18766616

申请日：2024-07-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hung-Jui Kuo ,  Hui-Jung Tsai ,  Chih Wang

IPC分类号： H01L21/66 ,  G01N27/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311

CPC分类号： H01L22/12 ,  G01N27/00 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/31138 ,  H01L21/02057

摘要： Provided is a method of detecting photoresist scums and photoresist residues. A carrier is provided. The carrier has a photoresist layer with opening patterns therein. A plasma etching process is performed to the opening patterns of the photoresist layer. Charges are injected to the opening patterns of the photoresist layer. Whether a photoresist scum or residue is present in at least one of the opening patterns is detected.

公开(公告)号：US20240282653A1

公开(公告)日：2024-08-22

申请号：US18652779

申请日：2024-05-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hung-Jui Kuo ,  Hui-Jung Tsai ,  Tai-Min Chang ,  Chia-Wei Wang

IPC分类号： H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L23/538 ,  H01L25/065

CPC分类号： H01L23/3114 ,  H01L21/561 ,  H01L23/5384 ,  H01L24/05 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/0231 ,  H01L2224/05008 ,  H01L2224/05099 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2924/181

摘要： Provided is a package structure including a first die and an encapsulant. The first die includes a substrate, a plurality of pads over the substrate, a passivation layer on portions of each of the plurality of pads, a plurality of first die connectors on the plurality of pads, respectively and a dielectric layer laterally encapsulating the plurality of first die connectors. The encapsulant laterally encapsulates the first die. One of the plurality of first die connectors is a taper-shaped die connector. A width of the one of the plurality of first die connectors gradually increases from a top surface of the one of the plurality of first die connectors toward the a top surface of the passivation layer.

公开(公告)号：US11996381B2

公开(公告)日：2024-05-28

申请号：US18079854

申请日：2022-12-12

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hui-Jung Tsai ,  Hung-Jui Kuo ,  Jyun-Siang Peng

IPC分类号： H01L23/00 ,  H01L21/48 ,  H01L23/538 ,  H01L25/00 ,  H01L25/065 ,  H01L23/498

CPC分类号： H01L24/25 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L25/0655 ,  H01L25/50 ,  H01L23/49816 ,  H01L24/16 ,  H01L24/73 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/16238 ,  H01L2224/24155 ,  H01L2224/24265 ,  H01L2224/2501 ,  H01L2224/25171 ,  H01L2224/32225 ,  H01L2224/73209 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/81355 ,  H01L2224/81815 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/18161 ,  H01L2224/94 ,  H01L2224/214 ,  H01L2224/97 ,  H01L2224/83 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2924/00014

摘要： A method of fabricating an integrated fan-out package is provided. The method includes the following steps. An integrated circuit component is provided on a substrate. An insulating encapsulation is formed on the substrate to encapsulate sidewalls of the integrated circuit component. A redistribution circuit structure is formed along a build-up direction on the integrated circuit component and the insulating encapsulation. The formation of the redistribution circuit structure includes the following steps. A dielectric layer and a plurality of conductive vias embedded in the dielectric layer are formed, wherein a lateral dimension of each of the conductive vias decreases along the build-up direction. A plurality of conductive wirings is formed on the plurality of conductive vias and the dielectric layer. An integrated fan-out package of the same is also provided.

公开(公告)号：US11977333B2

公开(公告)日：2024-05-07

申请号：US16527525

申请日：2019-07-31

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hung-Jui Kuo ,  Hsing-Chieh Lee ,  Ming-Tan Lee

IPC分类号： G03F7/09 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/30 ,  G03F7/36 ,  G03F7/42 ,  H01L21/027

CPC分类号： G03F7/36 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0758 ,  G03F7/091 ,  G03F7/30 ,  G03F7/427 ,  H01L21/0276

摘要： A single layer process is utilized to reduce swing effect interference and reflection during imaging of a photoresist. An anti-reflective additive is added to a photoresist, wherein the anti-reflective additive has a dye portion and a reactive portion. Upon dispensing the reactive portion will react with underlying structures to form an anti-reflective coating between the underlying structure and a remainder of the photoresist. During imaging, the anti-reflective coating will either absorb the energy, preventing it from being reflected, or else modify the optical path of reflection, thereby helping to reduce interference caused by the reflected energy.

公开(公告)号：US20240128122A1

公开(公告)日：2024-04-18

申请号：US18395706

申请日：2023-12-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Chung Chang ,  Ming-Che Ho ,  Hung-Jui Kuo

IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L25/10

CPC分类号： H01L21/76898 ,  H01L21/76804 ,  H01L21/76846 ,  H01L21/76871 ,  H01L23/481 ,  H01L25/105 ,  H01L23/49816 ,  H01L2225/1041

摘要： Semiconductor package includes substrate, first barrier layer, second barrier layer, routing via, first routing pattern, second routing pattern, semiconductor die. Substrate has through hole with tapered profile, wider at frontside surface than at backside surface of substrate. First barrier layer extends on backside surface. Second barrier layer extends along sidewalls of through hole and on frontside surface. Routing via fills through hole and is separated from sidewalls of through hole by at least second barrier layer. First routing pattern extends over first barrier layer on backside surface and over routing via. First routing pattern is electrically connected to end of routing via and has protrusion protruding towards end of routing via in correspondence of through hole. Second routing pattern extends over second barrier layer on frontside surface. Second routing pattern directly contacts another end of routing via. Semiconductor die is electrically connected to routing via by first routing pattern.

公开(公告)号：US11961811B2

公开(公告)日：2024-04-16

申请号：US17839494

申请日：2022-06-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Hung-Jui Kuo ,  Hui-Jung Tsai ,  Tsao-Lun Chang

IPC分类号： H01L23/00 ,  H01L29/06

CPC分类号： H01L24/08 ,  H01L24/03 ,  H01L24/33 ,  H01L24/83 ,  H01L29/0649 ,  H01L2924/1811 ,  H01L2924/186

摘要： A semiconductor structure includes a semiconductor element and a first bonding structure. The semiconductor element has a first surface and a second surface opposite to the first surface. The first bonding structure is disposed adjacent to the first surface of the semiconductor element, and includes a first electrical connector, a first insulation layer surrounding the first electrical connector and a first conductive layer surrounding the first insulation layer.

公开(公告)号：US20240096849A1

公开(公告)日：2024-03-21

申请号：US18152141

申请日：2023-01-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Chung Chang ,  Ming-Che Ho ,  Hung-Jui Kuo

IPC分类号： H01L25/065 ,  H01L21/56 ,  H01L21/768 ,  H01L23/00 ,  H01L23/498 ,  H01L23/538

CPC分类号： H01L25/0655 ,  H01L21/565 ,  H01L21/76829 ,  H01L23/49838 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/24 ,  H01L23/49827 ,  H01L2224/16135 ,  H01L2224/2401

摘要： A semiconductor structure includes a semiconductor die, a redistribution circuit structure, and a terminal. The redistribution circuit structure is disposed on and electrically coupled to the semiconductor die. The terminal is disposed on and electrically coupled to the redistribution circuit structure, where the redistribution circuit structure is disposed between the semiconductor die and the terminal, and the terminal includes an under-bump metallization (UBM) and a capping layer. The UBM is disposed on and electrically coupled to the redistribution circuit structure, where the UBM includes a recess. The capping layer is disposed on and electrically coupled to the UBM, where the UBM is between the capping layer and the redistribution circuit structure, and the capping layer fills the recess of the UBM.

公开(公告)号：US20240038674A1

公开(公告)日：2024-02-01

申请号：US18481961

申请日：2023-10-05

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yung-Chi Chu ,  Hung-Jui Kuo ,  Jhih-Yu Wang ,  Yu-Hsiang Hu

IPC分类号： H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/31 ,  H01L23/00 ,  H01L23/58

CPC分类号： H01L23/5389 ,  H01L21/4857 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3121 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/562 ,  H01L23/564 ,  H01L23/585 ,  H01L24/19 ,  H01L24/20 ,  H01L21/4853 ,  H01L2224/214 ,  H01L2221/68372

摘要： A package includes a die and a redistribution structure. The die has an active surface and is wrapped around by an encapsulant. The redistribution structure disposed on the active surface of the die and located above the encapsulant, wherein the redistribution structure comprises a conductive via connected with the die, a routing pattern located above and connected with the conductive via, and a seal ring structure, the seal ring structure includes a first seal ring element and a second seal ring element located above and connected with the first seal ring element, wherein the second seal ring element includes a seed layer sandwiched between the first seal ring element and the second seal ring element, and a top surface of the first seal ring element is substantially coplanar with a top surface of the conductive via.

公开(公告)号：US11855246B2

公开(公告)日：2023-12-26

申请号：US17509262

申请日：2021-10-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Keng-Han Lin ,  Hung-Jui Kuo ,  Hui-Jung Tsai

IPC分类号： H01L23/522 ,  H01L33/62 ,  H01L25/075 ,  H01L33/10 ,  H01L33/46 ,  H01L33/52 ,  H01S5/022

CPC分类号： H01L33/62 ,  H01L23/5226 ,  H01L25/0753 ,  H01L33/105 ,  H01L33/465 ,  H01L33/52 ,  H01L2933/005 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01S5/022

摘要： In an embodiment, a device includes: an interconnect structure including a first contact pad, a second contact pad, and an alignment mark; a light emitting diode including a cathode and an anode, the cathode connected to the first contact pad; an encapsulant encapsulating the light emitting diode; a first conductive via extending through the encapsulant, the first conductive via including a first seed layer, the first seed layer contacting the second contact pad; a second conductive via extending through the encapsulant, the second conductive via including a second seed layer, the first seed layer and the second seed layer including a first metal; and a hardmask layer between the second seed layer and the alignment mark, the hardmask layer including a second metal, the second metal different from the first metal.

公开(公告)号：US20230378111A1

公开(公告)日：2023-11-23

申请号：US18362991

申请日：2023-08-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Hung-Jui Kuo ,  Hui-Jung Tsai ,  Tsao-Lun Chang

IPC分类号： H01L23/00 ,  H01L29/06

CPC分类号： H01L24/08 ,  H01L24/83 ,  H01L24/33 ,  H01L29/0649 ,  H01L24/03 ,  H01L2924/1811 ,  H01L2924/186

摘要： A semiconductor structure includes a semiconductor substrate, a first electrical connector, a first electrical connector and a dielectric material. The semiconductor substrate has a first surface and a second surface opposite to the first surface. The first electrical connector is disposed over the first surface of the semiconductor substrate. The second electrical connector is electrically connected to the first electrical connector, and the first electrical connector surrounds the second electrical connector. The dielectric material is disposed between the first electrical connector and the second electrical connector.