公开(公告)号：US11145560B2

公开(公告)日：2021-10-12

申请号：US16398542

申请日：2019-04-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hung-Jui Kuo ,  Hsing-Chieh Lee ,  Ming-Tan Lee

IPC分类号： H01L21/66 ,  H01L21/027 ,  H01L21/768 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L23/522 ,  H01L23/528 ,  H01L25/065 ,  G03F7/38 ,  G03F7/004 ,  G03F7/039

摘要： A photoresist with a detection additive is utilized to help increase the contrast of images during an after development inspection process. The detection additive fluoresces during the after development inspection process and adds to the energy that is reflected during the after development inspection process, increasing the contrast during the after development inspection process and helping to identify defects that are not otherwise detectable.

公开(公告)号：US11977333B2

公开(公告)日：2024-05-07

申请号：US16527525

申请日：2019-07-31

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hung-Jui Kuo ,  Hsing-Chieh Lee ,  Ming-Tan Lee

IPC分类号： G03F7/09 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/30 ,  G03F7/36 ,  G03F7/42 ,  H01L21/027

CPC分类号： G03F7/36 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0758 ,  G03F7/091 ,  G03F7/30 ,  G03F7/427 ,  H01L21/0276

摘要： A single layer process is utilized to reduce swing effect interference and reflection during imaging of a photoresist. An anti-reflective additive is added to a photoresist, wherein the anti-reflective additive has a dye portion and a reactive portion. Upon dispensing the reactive portion will react with underlying structures to form an anti-reflective coating between the underlying structure and a remainder of the photoresist. During imaging, the anti-reflective coating will either absorb the energy, preventing it from being reflected, or else modify the optical path of reflection, thereby helping to reduce interference caused by the reflected energy.

公开(公告)号：US20200350218A1

公开(公告)日：2020-11-05

申请号：US16398542

申请日：2019-04-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hung-Jui Kuo ,  Hsing-Chieh Lee ,  Ming-Tan Lee

IPC分类号： H01L21/66 ,  H01L21/027 ,  H01L21/768 ,  H01L23/00 ,  H01L21/56 ,  H01L23/31 ,  H01L23/48 ,  H01L23/522 ,  H01L23/528 ,  H01L25/065 ,  G03F7/38 ,  G03F7/004 ,  G03F7/039

摘要： A photoresist with a detection additive is utilized to help increase the contrast of images during an after development inspection process. The detection additive fluoresces during the after development inspection process and adds to the energy that is reflected during the after development inspection process, increasing the contrast during the after development inspection process and helping to identify defects that are not otherwise detectable.

公开(公告)号：US20210035797A1

公开(公告)日：2021-02-04

申请号：US16527525

申请日：2019-07-31

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hung-Jui Kuo ,  Hsing-Chieh Lee ,  Ming-Tan Lee

IPC分类号： H01L21/027 ,  G03F7/075 ,  G03F7/09 ,  G03F7/42

摘要： A single layer process is utilized to reduce swing effect interference and reflection during imaging of a photoresist. An anti-reflective additive is added to a photoresist, wherein the anti-reflective additive has a dye portion and a reactive portion. Upon dispensing the reactive portion will react with underlying structures to form an anti-reflective coating between the underlying structure and a remainder of the photoresist. During imaging, the anti-reflective coating will either absorb the energy, preventing it from being reflected, or else modify the optical path of reflection, thereby helping to reduce interference caused by the reflected energy.