知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

9 条记录 (耗时 0.019 秒)

    METHODS FOR REMOVING CATALYST PARTICLES FROM NANOTUBE FILMS
    1.
    发明申请
    METHODS FOR REMOVING CATALYST PARTICLES FROM NANOTUBE FILMS 有权

    公开(公告)号：US20220413378A1

    公开(公告)日：2022-12-29

    申请号：US17722457

    申请日：2022-04-18

    申请人： Taiwan Semiconductor Manufacturing Company

    发明人： Ping-Hsun Lin ,  Pei-Cheng Hsu ,  Huan-Ling Lee ,  Ta-Cheng Lien ,  Hsin-Chang Lee ,  Chin-Hsiang Lin

    IPC分类号： G03F1/64

    摘要： Methods for removing a catalyst particle from a nanotube film used in a photolithographic patterning process are disclosed. The catalyst particle is identified based on its size in the nanotube film. This identification can be done using an inspection device such as a confocal microscope, which permits comparison of images taken in two or more separate focal planes to determine the size of particles. The catalyst particle is then exposed to a first absorption wavelength using a laser, which is selectively absorbed by the catalyst particle and which heats the catalyst particle to remove the catalyst particle from the nanotube film. Optionally, the catalyst particle-free nanotube film can be further exposed to a second absorption wavelength which is selectively absorbed by the film and promotes repair of the film. The resulting nanotube film can be used in a pellicle membrane.

    METHOD OF MANUFACTURING PHOTO MASKS
    4.
    发明公开
    METHOD OF MANUFACTURING PHOTO MASKS 审中-公开

    公开(公告)号：US20240069431A1

    公开(公告)日：2024-02-29

    申请号：US18110838

    申请日：2023-02-16

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    发明人： Wei-Che HSIEH ,  Chien-Cheng Chen ,  Ping-Hsun Lin ,  Ta-Cheng Lien ,  Hsin-Chang Lee

    IPC分类号： G03F1/32

    CPC分类号： G03F1/32

    摘要： In a method of manufacturing an attenuated phase shift mask, a photo resist pattern is formed over a mask blank. The mask blank includes a transparent substrate, an etch stop layer on the transparent substrate, a phase shift material layer on the etch stop layer, a hard mask layer on the phase shift material layer and an intermediate layer on the hard mask layer. The intermediate layer is patterned by using the photo resist pattern as an etching mask, the hard mask layer is patterned by using the patterned intermediate layer as an etching mask, and the phase shift material layer is patterned by using the patterned hard mask layer as an etching mask. The intermediate layer includes at least one of a transition metal, a transition metal alloy, or a silicon containing material, and the hard mask layer is made of a different material than the intermediate layer.