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    Lithography mask
    1.
    发明授权
    Lithography mask 有权

    公开(公告)号：US11899357B2

    公开(公告)日：2024-02-13

    申请号：US17321852

    申请日：2021-05-17

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Chien-Cheng Chen ,  Huan-Ling Lee ,  Ta-Cheng Lien ,  Chia-Jen Chen ,  Hsin-Chang Lee

    IPC分类号： G03F1/32

    CPC分类号： G03F1/32

    摘要： A mask for use in a semiconductor lithography process includes a substrate, a mask pattern disposed on the substrate, and a light absorbing border surrounding the mask pattern. The light absorbing border is inset from at least two edges of the substrate to define a peripheral region outside of the light absorbing border. In some designs, a first peripheral region extends from an outer perimeter of the light absorbing border to a first edge of the substrate, and a second peripheral region that extends from the outer perimeter of the light absorbing border to a second edge of the substrate, where the first edge of the substrate and the second edge of the substrate are on opposite sides of the mask pattern.

    METHODS FOR REMOVING CATALYST PARTICLES FROM NANOTUBE FILMS
    4.
    发明申请
    METHODS FOR REMOVING CATALYST PARTICLES FROM NANOTUBE FILMS 有权

    公开(公告)号：US20220413378A1

    公开(公告)日：2022-12-29

    申请号：US17722457

    申请日：2022-04-18

    申请人： Taiwan Semiconductor Manufacturing Company

    发明人： Ping-Hsun Lin ,  Pei-Cheng Hsu ,  Huan-Ling Lee ,  Ta-Cheng Lien ,  Hsin-Chang Lee ,  Chin-Hsiang Lin

    IPC分类号： G03F1/64

    摘要： Methods for removing a catalyst particle from a nanotube film used in a photolithographic patterning process are disclosed. The catalyst particle is identified based on its size in the nanotube film. This identification can be done using an inspection device such as a confocal microscope, which permits comparison of images taken in two or more separate focal planes to determine the size of particles. The catalyst particle is then exposed to a first absorption wavelength using a laser, which is selectively absorbed by the catalyst particle and which heats the catalyst particle to remove the catalyst particle from the nanotube film. Optionally, the catalyst particle-free nanotube film can be further exposed to a second absorption wavelength which is selectively absorbed by the film and promotes repair of the film. The resulting nanotube film can be used in a pellicle membrane.

    Pellicle assembly and fabrication methods thereof
    6.
    发明授权
    Pellicle assembly and fabrication methods thereof 有权

    公开(公告)号：US10036951B2

    公开(公告)日：2018-07-31

    申请号：US14726317

    申请日：2015-05-29

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Pei-Cheng Hsu ,  Chih-Cheng Lin ,  Hsin-Chang Lee ,  Ta-Cheng Lien ,  Anthony Yen

    IPC分类号： G03B27/62 ,  G03F1/64 ,  G03F7/20

    CPC分类号： G03F1/64 ,  G03F7/70741

    摘要： A method for fabricating a pellicle assembly for a lithography process includes fabricating a pellicle frame including a sidewall having a porous material. In some embodiments, the pellicle frame is subjected to an anodization process to form the porous material. The porous material includes a plurality of pore channels extending, in a direction perpendicular to an exterior surface of the sidewall, from the exterior surface to an interior surface of the sidewall. In various embodiments, a pellicle membrane is formed, and the pellicle membrane is attached to the pellicle frame such that the pellicle membrane is suspended by the pellicle frame. Some embodiments disclosed herein further provide a system including a membrane and a pellicle frame that secures the membrane across the pellicle frame. In some examples, a portion of the pellicle frame includes a porous material, where the porous material includes the plurality of pore channels.

    Lithography Mask
    9.
    发明申请
    Lithography Mask 有权
    平版印刷面膜

    公开(公告)号：US20150205194A1

    公开(公告)日：2015-07-23

    申请号：US14158068

    申请日：2014-01-17

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Yun-Yue LIN ,  Hsin-Chang Lee ,  Chia-Jen Chen ,  Anthony Yen

    IPC分类号： G03F1/48

    CPC分类号： G03F1/48

    摘要： The present disclosure provides a lithography mask comprising a substrate, a reflective multiplayer (ML) on the substrate, a barrier layer on the reflective ML, and an absorber layer over the barrier layer. In some embodiments, a thickness of the barrier layer is less than or equal to about 10 nm. In some embodiments, a portion of the absorber layer and a portion of the barrier layer are removed. The present disclosure also provides a method for fabricating a lithography mask, and a method for patterning a substrate using a lithography mask.

    摘要翻译： 本公开提供了一种光刻掩模，其包括衬底，衬底上的反射多人（ML），反射ML上的阻挡层，以及阻挡层上的吸收层。 在一些实施例中，阻挡层的厚度小于或等于约10nm。 在一些实施例中，吸收层的一部分和阻挡层的一部分被去除。 本公开还提供了一种用于制造光刻掩模的方法，以及使用光刻掩模图案化衬底的方法。

    Systems and methods for lithography masks
    10.
    发明授权
    Systems and methods for lithography masks 有权
    光刻掩模的系统和方法

    公开(公告)号：US09057961B2

    公开(公告)日：2015-06-16

    申请号：US14336231

    申请日：2014-07-21

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Chih-Chiang Tu ,  Hsin-Chang Lee ,  Jong-Yuh Chang ,  Chia-Jen Chen ,  Chun-Lang Chen

    IPC分类号： G03F1/00 ,  G03F1/36 ,  G03F1/50 ,  G03F1/58 ,  G03F1/80

    CPC分类号： G03F1/36 ,  G03F1/50 ,  G03F1/58 ,  G03F1/80

    摘要： Structure of mask blanks and masks, and methods of making masks are disclosed. The new mask blank and mask comprise a tripe etching stop layer to prevent damages to the quartz substrate when the process goes through etching steps three times. The triple etching stop layer may comprise a first sub-layer of tantalum containing nitrogen (TaN), a second sub-layer of tantalum containing oxygen (TaO), and a third sub-layer of TaN. Alternatively, the triple etching stop layer may comprise a first sub-layer of SiON material, a second sub-layer of TaO material, and a third sub-layer of SiON material. Another alternative may be one layer of low etching rate MoxSiyONz material which can prevent damages to the quartz substrate when the process goes through etching steps three times. The island mask is defined on the mask blank by using various optical proximity correction rules.

    摘要翻译： 公开了掩模毛坯和掩模的结构，以及制造掩模的方法。 当过程经过蚀刻步骤三次时，新的掩模坯料和掩模包括三层蚀刻停止层，以防止损坏石英基板。 三重蚀刻停止层可以包括含有氮（TaN）的钽的第一子层，含有氧（TaO）的钽的第二子层和TaN的第三子层。 或者，三重蚀刻停止层可以包括SiON材料的第一子层，TaO材料的第二子层和SiON材料的第三子层。 另一个替代方案可以是一层低蚀刻速率的MoxSiyONz材料，当该工艺经过蚀刻步骤三次时，其可以防止对石英衬底的损坏。 通过使用各种光学邻近校正规则在掩模空白上定义岛掩模。