公开(公告)号：US20210159226A1

公开(公告)日：2021-05-27

申请号：US17170601

申请日：2021-02-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Chang LIN ,  Chun-Feng NIEH ,  Huicheng CHANG ,  Hou-Yu CHEN ,  Yong-Yan LU

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/265 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/02 ,  H01L27/12 ,  H01L21/84 ,  H01L29/49

Abstract: A semiconductor device includes a substrate, a fin structure and an isolation layer formed on the substrate and adjacent to the fin structure. The semiconductor device includes a gate structure formed on at least a portion of the fin structure and the isolation layer. The semiconductor device includes an epitaxial layer including a strained material that provides stress to a channel region of the fin structure. The epitaxial layer has a first region and a second region, in which the first region has a first doping concentration of a first doping agent and the second region has a second doping concentration of a second doping agent. The first doping concentration is greater than the second doping concentration. The epitaxial layer is doped by ion implantation using phosphorous dimer.

公开(公告)号：US20170179130A1

公开(公告)日：2017-06-22

申请号：US15446295

申请日：2017-03-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Chang LIN ,  Chun-Feng NIEH ,  Huicheng CHANG ,  Hou-Yu CHEN ,  Yong-Yan LU

IPC: H01L27/092 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L27/0924 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/26586 ,  H01L21/26593 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/1211 ,  H01L29/165 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/6681 ,  H01L29/7842 ,  H01L29/7846 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7855

Abstract: A semiconductor device includes a substrate, a fin structure and an isolation layer formed on the substrate and adjacent to the fin structure. The semiconductor device includes a gate structure formed on at least a portion of the fin structure and the isolation layer. The semiconductor device includes an epitaxial layer including a strained material that provides stress to a channel region of the fin structure. The epitaxial layer has a first region and a second region, in which the first region has a first doping concentration of a first doping agent and the second region has a second doping concentration of a second doping agent. The first doping concentration is greater than the second doping concentration. The epitaxial layer is doped by ion implantation using phosphorous dimer.

公开(公告)号：US20170084741A1

公开(公告)日：2017-03-23

申请号：US14859165

申请日：2015-09-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Chang LIN ,  Chun-Feng NIEH ,  Huicheng CHANG ,  Hou-Yu CHEN ,  Yong-Yan LU

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L27/0924 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/26586 ,  H01L21/26593 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/1211 ,  H01L29/165 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/6681 ,  H01L29/7842 ,  H01L29/7846 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7855

Abstract: A semiconductor device includes a substrate, a fin structure and an isolation layer formed on the substrate and adjacent to the fin structure. The semiconductor device includes a gate structure formed on at least a portion of the fin structure and the isolation layer. The semiconductor device includes an epitaxial layer including a strained material that provides stress to a channel region of the fin structure. The epitaxial layer has a first region and a second region, in which the first region has a first doping concentration of a first doping agent and the second region has a second doping concentration of a second doping agent. The first doping concentration is greater than the second doping concentration. The epitaxial layer is doped by ion implantation using phosphorous dimer.

公开(公告)号：US20230387024A1

公开(公告)日：2023-11-30

申请号：US18446753

申请日：2023-08-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hung-Ming CHEN ,  Yu-Chang LIN ,  Chung-Ting LI ,  Jen-Hsiang LU ,  Hou-Ju LI ,  Chih-Pin TSAO

IPC: H01L23/535 ,  H01L29/66 ,  H01L29/78 ,  H01L21/768 ,  H01L29/417

CPC classification number: H01L23/535 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785 ,  H01L21/76897 ,  H01L21/76841 ,  H01L29/7848 ,  H01L29/41791

Abstract: A method includes forming a gate structure on a substrate; forming a gate spacer on a sidewall of the gate structure; forming a carbon-containing layer on the gate spacer; diffusing carbon from the carbon-containing layer into a portion of the substrate below the gate spacer; forming a recess in the substrate on one side of the gate spacer opposite to the gate structure; and forming an epitaxy feature in the recess of the substrate.

公开(公告)号：US20210280516A1

公开(公告)日：2021-09-09

申请号：US17330834

申请日：2021-05-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hung-Ming CHEN ,  Yu-Chang LIN ,  Chung-Ting LI ,  Jen-Hsiang LU ,  Hou-Ju LI ,  Chih-Pin TSAO

IPC: H01L23/535 ,  H01L29/66 ,  H01L29/78 ,  H01L21/768 ,  H01L29/417

Abstract: A method includes forming a gate structure on a substrate; forming a gate spacer on a sidewall of the gate structure; forming a carbon-containing layer on the gate spacer; diffusing carbon from the carbon-containing layer into a portion of the substrate below the gate spacer; forming a recess in the substrate on one side of the gate spacer opposite to the gate structure; and forming an epitaxy feature in the recess of the substrate.

公开(公告)号：US20190312143A1

公开(公告)日：2019-10-10

申请号：US15949273

申请日：2018-04-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jyun-Hao LIN ,  Chun-Feng NIEH ,  Huicheng CHANG ,  Yu-Chang LIN

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/08 ,  H01L29/167 ,  H01L29/36 ,  H01L21/265 ,  H01L29/165 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/02

Abstract: An embodiment is a method of manufacturing a semiconductor device. The method includes forming a fin on a substrate. A gate structure is formed over the fin. A recess is formed in the fin proximate the gate structure. A gradient doped region is formed in the fin with a p-type dopant. The gradient doped region extends from a bottom surface of the recess to a vertical depth below the recess in the fin. A source/drain region is formed in the recess and on the gradient doped regions.

公开(公告)号：US20190006363A1

公开(公告)日：2019-01-03

申请号：US16105925

申请日：2018-08-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Chang LIN ,  Chun-Feng NIEH ,  Huicheng CHANG ,  Hou-Yu CHEN ,  Yong-Yan LU

IPC: H01L27/092 ,  H01L29/78 ,  H01L21/02 ,  H01L29/66 ,  H01L29/49 ,  H01L27/12 ,  H01L21/8238 ,  H01L21/8234 ,  H01L21/265 ,  H01L29/165

CPC classification number: H01L27/0924 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/26586 ,  H01L21/26593 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/165 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/6681 ,  H01L29/7842 ,  H01L29/7846 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7855

Abstract: A semiconductor device includes a substrate, a fin structure and an isolation layer formed on the substrate and adjacent to the fin structure. The semiconductor device includes a gate structure formed on at least a portion of the fin structure and the isolation layer. The semiconductor device includes an epitaxial layer including a strained material that provides stress to a channel region of the fin structure. The epitaxial layer has a first region and a second region, in which the first region has a first doping concentration of a first doping agent and the second region has a second doping concentration of a second doping agent. The first doping concentration is greater than the second doping concentration. The epitaxial layer is doped by ion implantation using phosphorous dimer.