公开(公告)号：US20190312143A1

公开(公告)日：2019-10-10

申请号：US15949273

申请日：2018-04-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jyun-Hao LIN ,  Chun-Feng NIEH ,  Huicheng CHANG ,  Yu-Chang LIN

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/08 ,  H01L29/167 ,  H01L29/36 ,  H01L21/265 ,  H01L29/165 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/02

Abstract: An embodiment is a method of manufacturing a semiconductor device. The method includes forming a fin on a substrate. A gate structure is formed over the fin. A recess is formed in the fin proximate the gate structure. A gradient doped region is formed in the fin with a p-type dopant. The gradient doped region extends from a bottom surface of the recess to a vertical depth below the recess in the fin. A source/drain region is formed in the recess and on the gradient doped regions.