公开(公告)号：US20220223528A1

公开(公告)日：2022-07-14

申请号：US17712306

申请日：2022-04-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Yi Wu ,  Li-Hsuan Chu ,  Ching-Wen Wen ,  Chia-Chun Hung ,  Chen Liang Chang ,  Chin-Szu Lee ,  Hsiang Liu

IPC: H01L23/532 ,  H01L27/146 ,  H01L21/02 ,  H01L21/768 ,  H01L21/762 ,  H01L23/48 ,  H01L23/528

Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.

公开(公告)号：US20190131134A1

公开(公告)日：2019-05-02

申请号：US15797869

申请日：2017-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hong-Ying LIN ,  Cheng-Yi Wu ,  Alan Tu ,  Chung-Liang Cheng ,  Li-Hsuan Chu ,  Ethan Hsiao ,  Hui-Lin Sung ,  Sz-Yuan Hung ,  Sean Lo ,  C.W. Chiu ,  Chih-Wei Hsieh ,  Chin-Szu Lee

IPC: H01L21/285 ,  H01L23/532 ,  H01L23/535 ,  H01L29/08 ,  H01L29/78 ,  H01L29/66 ,  H01L21/768

Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

公开(公告)号：US20180337128A1

公开(公告)日：2018-11-22

申请号：US16050058

申请日：2018-07-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Yi Wu ,  Li-Hsuan Chu ,  Ching-Wen Wen ,  Chia-Chun Hung ,  Chen Liang Chang ,  Chin-Szu Lee ,  Hsiang Liu

IPC: H01L23/532 ,  H01L27/146 ,  H01L21/02 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L23/5329 ,  H01L21/0214 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14687

Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.

公开(公告)号：US11728170B2

公开(公告)日：2023-08-15

申请号：US17370684

申请日：2021-07-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hong-Ying Lin ,  Cheng-Yi Wu ,  Alan Tu ,  Chung-Liang Cheng ,  Li-Hsuan Chu ,  Ethan Hsiao ,  Hui-Lin Sung ,  Sz-Yuan Hung ,  Sheng-Yung Lo ,  C. W. Chiu ,  Chih-Wei Hsieh ,  Chin-Szu Lee

IPC: H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L23/535 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  C23C16/16

CPC classification number: H01L21/28556 ,  H01L21/28568 ,  H01L21/76805 ,  H01L21/76832 ,  H01L21/76895 ,  H01L23/535 ,  H01L23/53257 ,  H01L23/53295 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851 ,  C23C16/16

Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

公开(公告)号：US10658296B2

公开(公告)日：2020-05-19

申请号：US15282258

申请日：2016-09-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Yi Wu ,  Li-Hsuan Chu ,  Ching-Wen Wen ,  Chia-Chun Hung ,  Chen Liang Chang ,  Chin-Szu Lee ,  Hsiang Liu

IPC: H01L21/00 ,  H01L23/532 ,  H01L27/146 ,  H01L21/02 ,  H01L21/768 ,  H01L21/762 ,  H01L23/48 ,  H01L23/528 ,  H01L23/485

Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.

公开(公告)号：US11296027B2

公开(公告)日：2022-04-05

申请号：US16681556

申请日：2019-11-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Yi Wu ,  Li-Hsuan Chu ,  Ching-Wen Wen ,  Chia-Chun Hung ,  Chen Liang Chang ,  Chin-Szu Lee ,  Hsiang Liu

IPC: H01L23/48 ,  H01L23/532 ,  H01L27/146 ,  H01L21/02 ,  H01L21/768 ,  H01L21/762 ,  H01L23/528 ,  H01L23/485

Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.

公开(公告)号：US11062908B2

公开(公告)日：2021-07-13

申请号：US16596617

申请日：2019-10-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hong-Ying Lin ,  Cheng-Yi Wu ,  Alan Tu ,  Chung-Liang Cheng ,  Li-Hsuan Chu ,  Ethan Hsiao ,  Hui-Lin Sung ,  Sz-Yuan Hung ,  Sheng-Yung Lo ,  C. W. Chiu ,  Chih-Wei Hsieh ,  Chin-Szu Lee

IPC: H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L29/78 ,  H01L29/417 ,  H01L23/535 ,  H01L29/08 ,  H01L29/66 ,  C23C16/16

Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

公开(公告)号：US10763116B2

公开(公告)日：2020-09-01

申请号：US15797869

申请日：2017-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hong-Ying Lin ,  Cheng-Yi Wu ,  Alan Tu ,  Chung-Liang Cheng ,  Li-Hsuan Chu ,  Ethan Hsiao ,  Hui-Lin Sung ,  Sz-Yuan Hung ,  Sheng-Yung Lo ,  C. W. Chiu ,  Chih-Wei Hsieh ,  Chin-Szu Lee

IPC: H01L21/285 ,  H01L29/66 ,  H01L21/768 ,  H01L29/78 ,  H01L29/08 ,  H01L23/535 ,  H01L23/532 ,  C23C16/16 ,  H01L29/417

Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

公开(公告)号：US11901295B2

公开(公告)日：2024-02-13

申请号：US17712306

申请日：2022-04-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Yi Wu ,  Li-Hsuan Chu ,  Ching-Wen Wen ,  Chia-Chun Hung ,  Chen Liang Chang ,  Chin-Szu Lee ,  Hsiang Liu

IPC: H01L23/48 ,  H01L23/532 ,  H01L27/146 ,  H01L21/02 ,  H01L21/768 ,  H01L21/762 ,  H01L23/528 ,  H01L23/485

CPC classification number: H01L23/5329 ,  H01L21/0214 ,  H01L21/0228 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/76224 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/481 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L27/1463 ,  H01L27/14614 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14687 ,  H01L21/76831 ,  H01L23/485

Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.

公开(公告)号：US11152306B2

公开(公告)日：2021-10-19

申请号：US16050058

申请日：2018-07-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Yi Wu ,  Li-Hsuan Chu ,  Ching-Wen Wen ,  Chia-Chun Hung ,  Chen Liang Chang ,  Chin-Szu Lee ,  Hsiang Liu

IPC: H01L23/48 ,  H01L23/532 ,  H01L27/146 ,  H01L21/02 ,  H01L21/768 ,  H01L21/762 ,  H01L23/528 ,  H01L23/485

Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.