公开(公告)号：US20190131134A1

公开(公告)日：2019-05-02

申请号：US15797869

申请日：2017-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hong-Ying LIN ,  Cheng-Yi Wu ,  Alan Tu ,  Chung-Liang Cheng ,  Li-Hsuan Chu ,  Ethan Hsiao ,  Hui-Lin Sung ,  Sz-Yuan Hung ,  Sean Lo ,  C.W. Chiu ,  Chih-Wei Hsieh ,  Chin-Szu Lee

IPC: H01L21/285 ,  H01L23/532 ,  H01L23/535 ,  H01L29/08 ,  H01L29/78 ,  H01L29/66 ,  H01L21/768

Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

公开(公告)号：US11973302B2

公开(公告)日：2024-04-30

申请号：US18171609

申请日：2023-02-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis Chang ,  Henry Tong Yee Shian ,  Alan Tu ,  Han-Lung Chang ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H01S3/104 ,  H01S3/04 ,  H01S3/041 ,  H01S3/10 ,  H01S3/1123 ,  H01S3/223 ,  H01S3/23 ,  H05G2/00 ,  H01S3/00

CPC classification number: H01S3/104 ,  H01S3/1001 ,  H01S3/2316 ,  H05G2/008 ,  H01S3/005 ,  H01S3/0407 ,  H01S3/041 ,  H01S3/10038 ,  H01S3/10069 ,  H01S3/1123 ,  H01S3/2232

Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.

公开(公告)号：US11588293B2

公开(公告)日：2023-02-21

申请号：US16165022

申请日：2018-10-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis Chang ,  Henry Tong Yee-Shian ,  Alan Tu ,  Han-Lung Chang ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H01S3/10 ,  H01S3/23 ,  H01S3/04 ,  H01S3/11 ,  H01S3/223 ,  H01S3/041 ,  H01S3/00 ,  H05G2/00 ,  H01S3/104

Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.

公开(公告)号：US20190157828A1

公开(公告)日：2019-05-23

申请号：US16165022

申请日：2018-10-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis Chang ,  Henry Tong Yee-Shian ,  Alan Tu ,  Han-Lung Chang ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H01S3/04 ,  H01S3/23 ,  H01L21/027 ,  H05G2/00 ,  H01S3/13 ,  G03F7/20

Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.

公开(公告)号：US11062908B2

公开(公告)日：2021-07-13

申请号：US16596617

申请日：2019-10-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hong-Ying Lin ,  Cheng-Yi Wu ,  Alan Tu ,  Chung-Liang Cheng ,  Li-Hsuan Chu ,  Ethan Hsiao ,  Hui-Lin Sung ,  Sz-Yuan Hung ,  Sheng-Yung Lo ,  C. W. Chiu ,  Chih-Wei Hsieh ,  Chin-Szu Lee

IPC: H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L29/78 ,  H01L29/417 ,  H01L23/535 ,  H01L29/08 ,  H01L29/66 ,  C23C16/16

Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

公开(公告)号：US10763116B2

公开(公告)日：2020-09-01

申请号：US15797869

申请日：2017-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hong-Ying Lin ,  Cheng-Yi Wu ,  Alan Tu ,  Chung-Liang Cheng ,  Li-Hsuan Chu ,  Ethan Hsiao ,  Hui-Lin Sung ,  Sz-Yuan Hung ,  Sheng-Yung Lo ,  C. W. Chiu ,  Chih-Wei Hsieh ,  Chin-Szu Lee

IPC: H01L21/285 ,  H01L29/66 ,  H01L21/768 ,  H01L29/78 ,  H01L29/08 ,  H01L23/535 ,  H01L23/532 ,  C23C16/16 ,  H01L29/417

Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

公开(公告)号：US20240297476A1

公开(公告)日：2024-09-05

申请号：US18647199

申请日：2024-04-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis Chang ,  Henry Tong Yee Shian ,  Alan Tu ,  Han-Lung Chang ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H01S3/104 ,  H01S3/00 ,  H01S3/04 ,  H01S3/041 ,  H01S3/10 ,  H01S3/1123 ,  H01S3/223 ,  H01S3/23 ,  H05G2/00

CPC classification number: H01S3/104 ,  H01S3/1001 ,  H01S3/2316 ,  H05G2/008 ,  H01S3/005 ,  H01S3/0407 ,  H01S3/041 ,  H01S3/10038 ,  H01S3/10069 ,  H01S3/1123 ,  H01S3/2232

Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.

公开(公告)号：US11728170B2

公开(公告)日：2023-08-15

申请号：US17370684

申请日：2021-07-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hong-Ying Lin ,  Cheng-Yi Wu ,  Alan Tu ,  Chung-Liang Cheng ,  Li-Hsuan Chu ,  Ethan Hsiao ,  Hui-Lin Sung ,  Sz-Yuan Hung ,  Sheng-Yung Lo ,  C. W. Chiu ,  Chih-Wei Hsieh ,  Chin-Szu Lee

IPC: H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L23/535 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  C23C16/16

CPC classification number: H01L21/28556 ,  H01L21/28568 ,  H01L21/76805 ,  H01L21/76832 ,  H01L21/76895 ,  H01L23/535 ,  H01L23/53257 ,  H01L23/53295 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851 ,  C23C16/16

Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

公开(公告)号：US20230208092A1

公开(公告)日：2023-06-29

申请号：US18171609

申请日：2023-02-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis Chang ,  Henry Tong Yee Shian ,  Alan Tu ,  Han-Lung Chang ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H01S3/10 ,  H05G2/00 ,  H01S3/104 ,  H01S3/23

CPC classification number: H01S3/1001 ,  H05G2/008 ,  H01S3/104 ,  H01S3/2316 ,  H01S3/0407

Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.