公开(公告)号：US12072633B2

公开(公告)日：2024-08-27

申请号：US18334640

申请日：2023-06-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Tsung Shih ,  Yu-Hsun Wu ,  Bo-Tsun Liu ,  Tsung-Chuan Lee

IPC: G03F7/20 ,  G03F1/24

CPC classification number: G03F7/2004 ,  G03F1/24

Abstract: A method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack comprising alternating stacked Mo and Si layers over a mask substrate; forming a ruthenium capping layer over the multilayer Mo/Si stack; doping the ruthenium capping layer with a halogen element, a pentavalent element, a hexavalent element or combinations thereof; forming an absorber layer over the ruthenium capping layer; and etching the absorber layer to form a pattern in the absorber layer.

公开(公告)号：US11269257B2

公开(公告)日：2022-03-08

申请号：US17068197

申请日：2020-10-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chieh Hsieh ,  Kuan-Hung Chen ,  Chun-Chia Hsu ,  Shang-Chieh Chien ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F7/20 ,  G06F30/39

Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.

公开(公告)号：US20190166680A1

公开(公告)日：2019-05-30

申请号：US15905951

申请日：2018-02-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chia Hsu ,  Chieh Hsieh ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng ,  Tzung-Chi Fu ,  Bo-Tsun Liu

IPC: H05G2/00

Abstract: An EUV radiation source module includes a target droplet generator configured to generate target droplets; a first laser source configured to generate first laser pulses that heat the target droplets to produce target plumes; a second laser source configured to generate second laser pulses that heat the target plumes to produce plasma emitting EUV radiation; third and fourth laser sources configured to generate first and second laser beams, respectively, that are directed onto a travel path of the target plumes, wherein the first and second laser beams are substantially parallel; and a monitor configured to receive the first and second laser beams reflected by the target plumes.

公开(公告)号：US20240297476A1

公开(公告)日：2024-09-05

申请号：US18647199

申请日：2024-04-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis Chang ,  Henry Tong Yee Shian ,  Alan Tu ,  Han-Lung Chang ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H01S3/104 ,  H01S3/00 ,  H01S3/04 ,  H01S3/041 ,  H01S3/10 ,  H01S3/1123 ,  H01S3/223 ,  H01S3/23 ,  H05G2/00

CPC classification number: H01S3/104 ,  H01S3/1001 ,  H01S3/2316 ,  H05G2/008 ,  H01S3/005 ,  H01S3/0407 ,  H01S3/041 ,  H01S3/10038 ,  H01S3/10069 ,  H01S3/1123 ,  H01S3/2232

Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.

公开(公告)号：US20230208092A1

公开(公告)日：2023-06-29

申请号：US18171609

申请日：2023-02-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis Chang ,  Henry Tong Yee Shian ,  Alan Tu ,  Han-Lung Chang ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H01S3/10 ,  H05G2/00 ,  H01S3/104 ,  H01S3/23

CPC classification number: H01S3/1001 ,  H05G2/008 ,  H01S3/104 ,  H01S3/2316 ,  H01S3/0407

Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.

公开(公告)号：US11275301B2

公开(公告)日：2022-03-15

申请号：US16530218

申请日：2019-08-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Tsung Shih ,  Tsung-Chih Chien ,  Shih-Chi Fu ,  Chi-Hua Fu ,  Kuotang Cheng ,  Bo-Tsun Liu ,  Tsung Chuan Lee

IPC: G03F1/22 ,  G03F1/38 ,  G03F1/46 ,  G03F7/20

Abstract: An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.

公开(公告)号：US10928741B2

公开(公告)日：2021-02-23

申请号：US16876442

申请日：2020-05-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Ying Wu ,  Shang-Chieh Chien ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F7/20 ,  H05G2/00

Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.

公开(公告)号：US10824083B2

公开(公告)日：2020-11-03

申请号：US16057208

申请日：2018-08-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi Yang ,  Ssu-Yu Chen ,  Shang-Chieh Chien ,  Chieh Hsieh ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F7/20 ,  H05G2/00

Abstract: A light source for extreme ultraviolet (EUV) radiation is provided. The light source includes a target droplet generator, a laser generator, a measuring device, and a controller. The target droplet generator is configured to provide a plurality of target droplets to a source vessel. The laser generator is configured to provide a plurality of first laser pulses according to a control signal to irradiate the target droplets in the source vessel, so as to generate plasma as the EUV radiation. The measuring device is configured to measure process parameters including temperature of the source vessel, droplet positions of the target droplets, and beam sizes and focal points of the first laser pulses. The controller is configured to provide the control signal according to at least two of the process parameters.

公开(公告)号：US10656539B2

公开(公告)日：2020-05-19

申请号：US16117545

申请日：2018-08-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Ying Wu ,  Shang-Chieh Chien ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F7/20 ,  H05G2/00

Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.

公开(公告)号：US10429729B2

公开(公告)日：2019-10-01

申请号：US15883234

申请日：2018-01-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis Chang ,  Jen-Hao Yeh ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F1/24 ,  G03F7/20 ,  H01L21/027 ,  H05G2/00

Abstract: A method and system for generating EUV light includes providing a laser beam having a Gaussian distribution. This laser beam can be then modified from a Gaussian distribution to a ring-like distribution. The modified laser beam is provided through an aperture in a collector and interfaces with a moving droplet target, which generates an extreme ultraviolet (EUV) wavelength light. The generated EUV wavelength light is provided to the collector away from the aperture. In some embodiments, a mask element may also be used to modify the laser beam to a shape.