公开(公告)号：US20240084447A1

公开(公告)日：2024-03-14

申请号：US18513448

申请日：2023-11-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Peng-Cheng Hong ,  Jun-Liang Pu ,  W.L. Hsu ,  Chung-Hao Kao ,  Chia-Chun Hung ,  Cheng-Yi Wu ,  Chin-Szu Lee

IPC: C23C16/44 ,  B29D99/00 ,  C23C14/02 ,  C23C14/20 ,  C23C14/34 ,  C23C18/18 ,  C25D7/04 ,  H01J37/32

CPC classification number: C23C16/4409 ,  B29D99/0053 ,  C23C14/021 ,  C23C14/205 ,  C23C14/34 ,  C23C18/1875 ,  C25D7/04 ,  H01J37/32513 ,  B29K2019/00

Abstract: A sealing article includes a body and a coating layer disposed on at least one surface of the body. The body comprises a polymeric elastomer such as perfluoroelastomer or fluoroelastomer. The coating layer comprises at least one metal. The sealing article may be a seal, a gasket, an O-ring, a T-ring or any other suitable product. The sealing article is resistant to ultra-violet (UV) light and plasma, and may be used for sealing a semiconductor processing chamber.

公开(公告)号：US11726342B2

公开(公告)日：2023-08-15

申请号：US17881439

申请日：2022-08-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yu Chen ,  Chun-Peng Li ,  Chia-Chun Hung ,  Ching-Hsiang Hu ,  Wei-Ding Wu ,  Jui-Chun Weng ,  Ji-Hong Chiang ,  Yen Chiang Liu ,  Jiun-Jie Chiou ,  Li-Yang Tu ,  Jia-Syuan Li ,  You-Cheng Jhang ,  Shin-Hua Chen ,  Lavanya Sanagavarapu ,  Han-Zong Pan ,  Hsi-Cheng Hsu

IPC: G02B27/30 ,  H01L31/0232 ,  H01L27/146

CPC classification number: G02B27/30 ,  H01L27/14625 ,  H01L31/02325

Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm−3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.

公开(公告)号：US20220223528A1

公开(公告)日：2022-07-14

申请号：US17712306

申请日：2022-04-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Yi Wu ,  Li-Hsuan Chu ,  Ching-Wen Wen ,  Chia-Chun Hung ,  Chen Liang Chang ,  Chin-Szu Lee ,  Hsiang Liu

IPC: H01L23/532 ,  H01L27/146 ,  H01L21/02 ,  H01L21/768 ,  H01L21/762 ,  H01L23/48 ,  H01L23/528

Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.

公开(公告)号：US11851754B2

公开(公告)日：2023-12-26

申请号：US15801497

申请日：2017-11-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Peng-Cheng Hong ,  Jun-Liang Pu ,  W. L. Hsu ,  Chung-Hao Kao ,  Chia-Chun Hung ,  Cheng-Yi Wu ,  Chin-Szu Lee

IPC: C23C16/44 ,  C23C14/02 ,  C23C18/18 ,  B29D99/00 ,  C23C14/34 ,  C25D7/04 ,  H01J37/32 ,  C23C14/20 ,  B29K19/00 ,  C25D5/56 ,  C23C18/28 ,  C23C18/24 ,  C23C8/30 ,  C23C18/20 ,  C23C18/30

CPC classification number: C23C16/4409 ,  B29D99/0053 ,  C23C14/021 ,  C23C14/205 ,  C23C14/34 ,  C23C18/1875 ,  C25D7/04 ,  H01J37/32513 ,  B29K2019/00 ,  C23C18/2086 ,  C23C18/24 ,  C23C18/285 ,  C23C18/30 ,  C25D5/56

Abstract: A sealing article includes a body and a coating layer disposed on at least one surface of the body. The body comprises a polymeric elastomer such as perfluoroelastomer or fluoroelastomer. The coating layer comprises at least one metal. The sealing article may be a seal, a gasket, an O-ring, a T-ring or any other suitable product. The sealing article is resistant to ultra-violet (UV) light and plasma, and may be used for sealing a semiconductor processing chamber.

公开(公告)号：US20220356571A1

公开(公告)日：2022-11-10

申请号：US17871810

申请日：2022-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Peng-Cheng HONG ,  Jun-Liang Pu ,  W.L. Hsu ,  Chung-Hao Kao ,  Chia-Chun Hung ,  Cheng-Yi Wu ,  Chin-Szu Lee

IPC: C23C16/44 ,  C23C14/02 ,  C23C18/18 ,  B29D99/00 ,  C23C14/34 ,  C25D7/04 ,  H01J37/32 ,  C23C14/20

Abstract: A method of making a sealing article that includes a body and a coating layer disposed on at least one surface of the body. The body comprises a polymeric elastomer such as perfluoroelastomer or fluoroelastomer. The coating layer comprises at least one metal. The sealing article may be a seal, a gasket, an O-ring, a T-ring or any other suitable product. The sealing article is resistant to ultra-violet (UV) light and plasma, and may be used for sealing a semiconductor processing chamber.

公开(公告)号：US10658296B2

公开(公告)日：2020-05-19

申请号：US15282258

申请日：2016-09-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Yi Wu ,  Li-Hsuan Chu ,  Ching-Wen Wen ,  Chia-Chun Hung ,  Chen Liang Chang ,  Chin-Szu Lee ,  Hsiang Liu

IPC: H01L21/00 ,  H01L23/532 ,  H01L27/146 ,  H01L21/02 ,  H01L21/768 ,  H01L21/762 ,  H01L23/48 ,  H01L23/528 ,  H01L23/485

Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.

公开(公告)号：US11920238B2

公开(公告)日：2024-03-05

申请号：US17871810

申请日：2022-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Peng-Cheng Hong ,  Jun-Liang Pu ,  W. L. Hsu ,  Chung-Hao Kao ,  Chia-Chun Hung ,  Cheng-Yi Wu ,  Chin-Szu Lee

IPC: B29D99/00 ,  C23C14/02 ,  C23C14/20 ,  C23C14/34 ,  C23C16/44 ,  C23C18/18 ,  C25D7/04 ,  H01J37/32 ,  B29K19/00 ,  C23C18/20 ,  C23C18/24 ,  C23C18/28 ,  C23C18/30 ,  C25D5/56

CPC classification number: C23C16/4409 ,  B29D99/0053 ,  C23C14/021 ,  C23C14/205 ,  C23C14/34 ,  C23C18/1875 ,  C25D7/04 ,  H01J37/32513 ,  B29K2019/00 ,  C23C18/2086 ,  C23C18/24 ,  C23C18/285 ,  C23C18/30 ,  C25D5/56

Abstract: A method of making a sealing article that includes a body and a coating layer disposed on at least one surface of the body. The body comprises a polymeric elastomer such as perfluoroelastomer or fluoroelastomer. The coating layer comprises at least one metal. The sealing article may be a seal, a gasket, an O-ring, a T-ring or any other suitable product. The sealing article is resistant to ultra-violet (UV) light and plasma, and may be used for sealing a semiconductor processing chamber.

公开(公告)号：US20180337128A1

公开(公告)日：2018-11-22

申请号：US16050058

申请日：2018-07-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Yi Wu ,  Li-Hsuan Chu ,  Ching-Wen Wen ,  Chia-Chun Hung ,  Chen Liang Chang ,  Chin-Szu Lee ,  Hsiang Liu

IPC: H01L23/532 ,  H01L27/146 ,  H01L21/02 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L23/5329 ,  H01L21/0214 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14687

Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.

公开(公告)号：US12227839B2

公开(公告)日：2025-02-18

申请号：US18513448

申请日：2023-11-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Peng-Cheng Hong ,  Jun-Liang Pu ,  W. L. Hsu ,  Chung-Hao Kao ,  Chia-Chun Hung ,  Cheng-Yi Wu ,  Chin-Szu Lee

IPC: C23C16/44 ,  B29D99/00 ,  B29K19/00 ,  C23C14/02 ,  C23C14/20 ,  C23C14/34 ,  C23C18/18 ,  C23C18/20 ,  C23C18/24 ,  C23C18/28 ,  C23C18/30 ,  C25D5/56 ,  C25D7/04 ,  H01J37/32

Abstract: A sealing article includes a body and a coating layer disposed on at least one surface of the body. The body comprises a polymeric elastomer such as perfluoroelastomer or fluoroelastomer. The coating layer comprises at least one metal. The sealing article may be a seal, a gasket, an O-ring, a T-ring or any other suitable product. The sealing article is resistant to ultra-violet (UV) light and plasma, and may be used for sealing a semiconductor processing chamber.

公开(公告)号：US11901295B2

公开(公告)日：2024-02-13

申请号：US17712306

申请日：2022-04-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Yi Wu ,  Li-Hsuan Chu ,  Ching-Wen Wen ,  Chia-Chun Hung ,  Chen Liang Chang ,  Chin-Szu Lee ,  Hsiang Liu

IPC: H01L23/48 ,  H01L23/532 ,  H01L27/146 ,  H01L21/02 ,  H01L21/768 ,  H01L21/762 ,  H01L23/528 ,  H01L23/485

CPC classification number: H01L23/5329 ,  H01L21/0214 ,  H01L21/0228 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/76224 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/481 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L27/1463 ,  H01L27/14614 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14687 ,  H01L21/76831 ,  H01L23/485

Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.