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    Resist composition and method of forming resist pattern
    1.
    发明授权
    Resist composition and method of forming resist pattern 有权

    公开(公告)号：US11747726B2

    公开(公告)日：2023-09-05

    申请号：US16909100

    申请日：2020-06-23

    申请人： TOKYO OHKA KOGYO CO., LTD.

    发明人： Yuki Fukumura ,  Tatsuya Fujii ,  Yoichi Hori

    IPC分类号： G03F7/004 ,  G03F7/20 ,  C08F222/18 ,  G03F7/32

    CPC分类号： G03F7/0046 ,  C08F222/18 ,  G03F7/2004 ,  G03F7/32

    摘要： A resist composition including a base component and a fluorine additive component (F), the component (F) including a copolymer having a structural unit (f1) represented by general formula (f1-1) or (f1-2), and a structural unit (f2) represented by general formula (f2-1) (in formula (f1-1) and (f2-1), R represents a hydrogen atom or the like; at least one of Raf11 and Raf12, and at least one of Raf13 and Raf14 represents a hydrocarbon group substituted with a fluorine atom, and the total number of carbon atoms is 3 or more, provided that a hydrocarbon group forming a bridge structure is excluded; and the structural unit (f2) has a specific acid dissociable group containing an aliphatic cyclic group having no bridge structure

    Resist composition and method of forming resist pattern
    2.
    发明授权
    Resist composition and method of forming resist pattern 有权

    公开(公告)号：US11586111B2

    公开(公告)日：2023-02-21

    申请号：US16700881

    申请日：2019-12-02

    申请人： TOKYO OHKA KOGYO CO., LTD.

    发明人： Yasuhiro Yoshii ,  Masahito Yahagi ,  Yoichi Hori ,  Takahiro Kojima

    IPC分类号： G03F7/039 ,  G03F7/20 ,  C08G61/10

    摘要： A resist composition including a compound (D0) represented by general formula (d0) and a resin component (A1) has a structural unit (a0) in which a compound represented by general formula (a0-1) has a polymerizable group within the W1 portion converted into a main chain (in formula (d0), Rd01 represents a fluorine atom or a fluorinated alkyl group; In formula (a0-1), W1 represents a polymerizable group-containing group; Ct represents a tertiary carbon atom, and the α-position of Ct is a carbon atom which constitutes a carbon-carbon unsaturated bond; R11 represents an aromatic hydrocarbon group; or a chain hydrocarbon group; R12 and R13 each independently represents a chain hydrocarbon group, or R12 and R13 are mutually bonded to form a cyclic group).

    RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
    3.
    发明申请
    RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权

    公开(公告)号：US20210132495A1

    公开(公告)日：2021-05-06

    申请号：US17086943

    申请日：2020-11-02

    申请人： TOKYO OHKA KOGYO CO., LTD.

    发明人： Masahito Yahagi ,  Yoichi Hori

    IPC分类号： G03F7/004 ,  G03F7/20 ,  G03F7/039 ,  C08L33/14

    摘要： A resist composition including a resin component (A1) having a structural unit (a01), a structural unit (a02) and a structural unit (a03) derived from compounds represented by general formulae (a01-1), (a02-1) and (a03-1), respectively (W01 represents a polymerizable group-containing group containing no oxygen; W02 represents a polymerizable group-containing group containing oxygen; W03 represents a polymerizable group-containing group which may contain oxygen; Wa01 and Wa02 represent an aromatic hydrocarbon group; Xa03 represents a group which forms an alicyclic hydrocarbon group together with Ya03; Ra00 represents a hydrocarbon group which may have a substituent)

    METHOD FOR FORMING RESIST PATTERN, RESIST PATTERN SPLITTING AGENT, SPLIT PATTERN IMPROVING AGENT, RESIST PATTERN SPLITTING MATERIAL, AND POSITIVE RESIST COMPOSITION FOR FORMING SPLIT PATTERN
    5.
    发明申请
    METHOD FOR FORMING RESIST PATTERN, RESIST PATTERN SPLITTING AGENT, SPLIT PATTERN IMPROVING AGENT, RESIST PATTERN SPLITTING MATERIAL, AND POSITIVE RESIST COMPOSITION FOR FORMING SPLIT PATTERN 有权
    形成耐蚀图案的方法，耐蚀图案分割机，分割图案改进剂，耐蚀图案分割材料和形成分割图案的积极组合物

    公开(公告)号：US20160091790A1

    公开(公告)日：2016-03-31

    申请号：US14864099

    申请日：2015-09-24

    申请人： TOKYO OHKA KOGYO CO., LTD.

    发明人： Yoichi Hori ,  Takayoshi Mori ,  Ryoji Watanabe ,  Rikita Tsunoda

    IPC分类号： G03F7/00 ,  G03F7/039 ,  G03F7/32 ,  G03F7/004 ,  G03F7/20 ,  G03F7/40

    CPC分类号： G03F7/11 ,  C07C321/28 ,  C07D213/79 ,  C07D295/155 ,  C07D295/26 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/30 ,  G03F7/32 ,  G03F7/325 ,  G03F7/40 ,  G03F7/405

    摘要： A method of forming a resist pattern, including: a step A in which a positive resist composition is applied to a substrate to form a positive resist film, the positive resist film is exposed and the positive resist film is subjected to an alkali development to form a first resist pattern; a step B in which a solution containing an acid or a thermoacid generator is applied to the substrate whereon the first resist pattern is formed, so as to cover the first resist pattern, to form a structure having the first resist pattern and a first layer covering the first resist pattern; a step C in which the structure is heated and the solubility of the first resist pattern in an organic solvent is changed under action of the acid or under action of acid generated from the thermoacid generator; and a step D in which the structure after heating is developed with the organic solvent to remove a region of the first resist pattern other than the region of the first resist pattern where the solubility in the organic solvent is changed, so as to form a second resist pattern.

    摘要翻译： 一种形成抗蚀剂图案的方法，包括：步骤A，其中将正性抗蚀剂组合物施加到基板上以形成正性抗蚀剂膜，暴露正性抗蚀剂膜，并将正性抗蚀剂膜进行碱显影以形成 第一抗蚀剂图案; 将含有酸或热酸发生剂的溶液施加到形成有第一抗蚀剂图案的基板上以覆盖第一抗蚀剂图案的步骤B，以形成具有第一抗蚀剂图案和第一层覆盖层 第一种抗蚀剂图案; 其中结构被加热并且第一抗蚀剂图案在有机溶剂中的溶解度在酸的作用下或在由热酸产生剂产生的酸的作用下改变的步骤C; 以及步骤D，其中加热后的结构用有机溶剂显影以除去除了在有机溶剂中的溶解度改变的第一抗蚀剂图案的区域之外的第一抗蚀剂图案的区域，以形成第二 抗蚀图案

    Resist composition and resist pattern forming method
    6.
    发明授权
    Resist composition and resist pattern forming method 有权
    抗蚀剂组成和抗蚀剂图案形成方法

    公开(公告)号：US09274424B2

    公开(公告)日：2016-03-01

    申请号：US14219395

    申请日：2014-03-19

    申请人： Tokyo Ohka Kogyo Co., Ltd.

    发明人： Tsuyoshi Nakamura ,  Kazuishi Tanno ,  Naoto Motoike ,  Junichi Tsuchiya ,  Yoichi Hori

    IPC分类号： G03F7/039 ,  G03F7/038 ,  G03F7/20 ,  G03F7/30 ,  G03F7/004

    CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/2041 ,  G03F7/30

    摘要： A resist composition which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of the acid contains a high-molecular weight compound (A1) having a constituent unit (a0) represented by a general formula (a0-1) and a constituent unit (a1-1) including a monocyclic group-containing acid decomposable group whose polarity increases by the action of an acid. In the formula (a0-1), R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Ya01 represents a single bond or a divalent linking group; X01 represents a sulfur atom or an oxygen atom; and Ra01 represents an optionally substituted cyclic group, chain alkyl group, or chain alkenyl group.

    摘要翻译： 在曝光后产生酸的抗蚀剂组合物，通过酸的作用显现出在显影液中溶解度的变化，含有具有由通式（a0-1）表示的构成单元（a0）的高分子量化合物（A1） 和包含通过酸的作用极性增加的含有单环基团的酸分解基团的构成单元（a1-1）。 式（a0-1）中，R表示氢原子，碳原子数1〜5的烷基或碳原子数1〜5的卤代烷基。 Ya01表示单键或二价连接基团; X01表示硫原子或氧原子; 和Ra01表示任选取代的环状基团，链烷基或链烯基。

    Resist pattern formation method and resist composition
    8.
    发明授权
    Resist pattern formation method and resist composition 有权

    公开(公告)号：US09740105B2

    公开(公告)日：2017-08-22

    申请号：US14033201

    申请日：2013-09-20

    申请人： Tokyo Ohka Kogyo Co., Ltd.

    发明人： Yoichi Hori ,  Shinichi Hidesaka ,  Takeaki Shiroki

    IPC分类号： G03F7/004 ,  G03F7/30 ,  G03F7/40 ,  G03F7/039

    CPC分类号： G03F7/40 ,  G03F7/0397 ,  G03F7/30

    摘要： A resist pattern formation method including formation of a resist film, exposure, development, and subsequent rinsing using a resist composition containing a high-molecular compound having a constituent unit represented by the formula (a0-1), a constituent unit containing an acid decomposable group whose polarity increases by the action of an acid, and a constituent unit containing a group represented by the formula (a2-r-1). R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Ra01 represents a lactone-containing polycyclic group, an —SO2-containing polycyclic group, or a cyano group-containing polycyclic group; Ra′21 represents a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, —COOR″, —OC(═O)R″, a hydroxyalkyl group, or a cyano group; R″ represents a hydrogen atom or an alkyl group; and n′ represents an integer of from 0 to 2.