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公开(公告)号：US09690194B2
公开(公告)日：2017-06-27
申请号：US14088775
申请日：2013-11-25
CPC分类号： G03F7/0382 , G03F7/0397 , G03F7/325
摘要： A method of forming a resist pattern using a resist composition containing a base component (A) which exhibits reduced solubility in an organic solvent under action of an acid and an acid-generator component (B) which generates an acid upon exposure, the base component (A) including a resin component (A1) having a structural unit (a0) derived from a compound represented by general formula (a0-1) shown below and a structural unit (a2) containing a lactone-containing cyclic group or the like (in formula (a0-1), Ra1 represents a monovalent substituent having a polymerizable group, La1 represents O, S or a methylene group, R1 represents a linear or branched hydrocarbon group of 2 to 20 carbon atoms which may have a substituent, or a cyclic hydrocarbon group which may have a hetero atom, and n represents an integer of 0 to 5).
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公开(公告)号：US09405200B2
公开(公告)日：2016-08-02
申请号：US13624639
申请日：2012-09-21
发明人： Tsuyoshi Nakamura , Jiro Yokoya , Hiroaki Shimizu , Hideto Nito
CPC分类号： G03F7/38 , G03F7/004 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/0755 , G03F7/0758 , G03F7/20
摘要： A method of forming a resist pattern, including: a step (1) in which a resist film is formed by coating a resist composition including a base component (A) that exhibits increased solubility in an alkali developing solution, a photo-base generator component (C) that generates a base upon exposure, an acid supply component (Z) and a compound (F) containing at least one selected from the group consisting of a fluorine atom and a silicon atom and containing no acid decomposable group which exhibits increased polarity by the action of acid on a substrate; a step (2) in which the resist film is subjected to exposure; a step (3) in which baking is conducted after the step (2); and a step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern, and a resist composition used in the step (1).
摘要翻译： 一种形成抗蚀剂图案的方法，包括：步骤（1），其中通过涂覆抗蚀剂组合物形成抗蚀剂膜，所述抗蚀剂组合物包括在碱性显影液中表现出增加的溶解度的碱性组分（A），光产生剂组分 （C），酸性供给成分（Z）和含有选自氟原子和硅原子中的至少一种的化合物（F），并且不含显示出极性增加的酸分解基团 通过酸在基底上的作用; 其中抗蚀剂膜被曝光的步骤（2）; 步骤（3），其中在步骤（2）之后进行烘烤; 以及步骤（4），其中抗蚀剂膜经受碱显影，从而形成负色调抗蚀剂图案，以及在步骤（1）中使用的抗蚀剂组合物。
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公开(公告)号：US09274424B2
公开(公告)日：2016-03-01
申请号：US14219395
申请日：2014-03-19
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0382 , G03F7/2041 , G03F7/30
摘要： A resist composition which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of the acid contains a high-molecular weight compound (A1) having a constituent unit (a0) represented by a general formula (a0-1) and a constituent unit (a1-1) including a monocyclic group-containing acid decomposable group whose polarity increases by the action of an acid. In the formula (a0-1), R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Ya01 represents a single bond or a divalent linking group; X01 represents a sulfur atom or an oxygen atom; and Ra01 represents an optionally substituted cyclic group, chain alkyl group, or chain alkenyl group.
摘要翻译： 在曝光后产生酸的抗蚀剂组合物，通过酸的作用显现出在显影液中溶解度的变化，含有具有由通式（a0-1）表示的构成单元（a0）的高分子量化合物（A1） 和包含通过酸的作用极性增加的含有单环基团的酸分解基团的构成单元（a1-1）。 式（a0-1）中，R表示氢原子，碳原子数1〜5的烷基或碳原子数1〜5的卤代烷基。 Ya01表示单键或二价连接基团; X01表示硫原子或氧原子; 和Ra01表示任选取代的环状基团，链烷基或链烯基。
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公开(公告)号：US09052592B2
公开(公告)日：2015-06-09
申请号：US14218249
申请日：2014-03-18
IPC分类号： G03F7/004 , C08F28/00 , G03F7/038 , C08F220/24 , C08F220/56 , C08F20/52 , C07C381/12
CPC分类号： G03F7/038 , C07C381/12 , C08F20/52 , C08F220/24 , C08F220/56 , G03F7/0045 , G03F7/0397
摘要： A resist composition contains a high-molecular weight compound which has a partial structure represented by a general formula (a0-r-1) and has a constituent unit represented by a general formula (a0-1). In the formula (a0-r-1), Y1 represents a divalent linking group; each of R2 and R3 represents a group having 0 to 20 carbon atoms, which is not a fluorine atom, and either R2 or R3 may form a ring with Y1; m represents an integer of 1 or more; and Mm+ represents an m-valent organic cation. In the formula (a0-1), R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Ya01 represents a single bond or a divalent linking group; X01 represents a sulfur atom or an oxygen atom; and Ra01 represents an optionally substituted cyclic group, chain alkyl group or chain alkenyl group.
摘要翻译： 抗蚀剂组合物含有具有由通式（a0-r-1）表示的部分结构并具有由通式（a0-1）表示的结构单元的高分子量化合物。 在式（a0-r-1）中，Y1表示二价连接基团; R 2和R 3各自表示碳原子数为0〜20的不是氟原子的基团，R 2或R 3可以与Y 1成环; m表示1以上的整数， Mm +表示m价有机阳离子。 在式（a0-1）中，R表示氢原子，烷基或卤代烷基; Ya01表示单键或二价连接基团; X01表示硫原子或氧原子; 且Ra01表示任意取代的环状基团，链状烷基或链烯基。
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公开(公告)号：US20150147702A1
公开(公告)日：2015-05-28
申请号：US14608887
申请日：2015-01-29
发明人： Tsuyoshi Nakamura , Jiro Yokoya , Hiroaki Shimizu , Hideto Nito
IPC分类号： G03F7/38
CPC分类号： G03F7/38 , G03F7/004 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/0755 , G03F7/0758 , G03F7/20
摘要： A method of forming a resist pattern, including forming a resist film by coating a resist composition including a base component (A) that exhibits increased solubility in an alkali developing solution, a photo-base generator component (C) that generates a base upon exposure, an acid supply component (Z) and a compound (F) containing at least one selected from the group consisting of a fluorine atom and a silicon atom and containing no acid decomposable group which exhibits increased polarity by the action of acid on a substrate; subjecting the resist film to exposure baking the exposed resist film; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern.
摘要翻译： 一种形成抗蚀剂图案的方法，包括通过涂布抗蚀剂组合物形成抗蚀剂膜，所述抗蚀剂组合物包括在碱性显影液中显示增加的溶解度的基础组分（A），在曝光时产生碱的光产生剂组分（C） ，酸性供给成分（Z）和含有选自由氟原子和硅原子组成的组中的至少一种的化合物（F），并且不含有通过酸作用而在基材上显示出极性增加的酸分解基团; 对抗蚀剂膜进行曝光烘烤曝光的抗蚀剂膜; 并对抗蚀剂膜进行碱显影，从而形成负色调抗蚀剂图案。
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6.发明授权公开(公告)号：US11036132B2
公开(公告)日：2021-06-15
申请号：US16225873
申请日：2018-12-19
IPC分类号： G03F7/004 , G03F7/30 , G03F7/039 , C07C63/34 , C07C63/36 , C07C63/38 , C07C63/42 , C07C63/44 , C07C63/46 , C07C65/11 , C07C65/15 , G03F7/038 , C07C321/30 , C07C57/50 , G03F7/32 , C07C381/12 , G03F7/38
摘要： A resist composition which generates an acid upon exposure and whose solubility in a developing solution is changed due to an action of the acid, the resist composition including a base material component whose solubility in a developing solution is changed due to the action of an acid; and a compound represented by Formula (d1) in which Rb1 and Rb2 each independently represents —COO−, —COOH, or a hydroxyl group, where at least one of Rb1 and Rb2 represents —COO−, Rb3, Rb4, and Rb5 each independently represents a hydroxyl group or a halogen atom, Rb6 to Rb8 each independently represents an alkyl group, nb3 represents an integer of 0 to 4, nb4 and nb5 each independently represents an integer of 0 to 2, nb6 to nb8 each independently represents an integer of 0 to 5, m represents 1 or 2, and q represents an integer of 0 to 3.)
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公开(公告)号：US11036131B2
公开(公告)日：2021-06-15
申请号：US16225290
申请日：2018-12-19
IPC分类号： G03F7/004 , G03F7/039 , C07C309/06 , C07C309/12 , C07C309/19 , C07J9/00 , G03F7/20 , C07J31/00 , C07J19/00 , C07J43/00 , G03F7/038 , C08L33/14 , C07C309/04 , C07C303/32 , G03F7/30 , C08G61/04 , G03F7/38
摘要： A resist composition containing a compound (B1) represented by Formula (b1) in which Rb1 represents a monovalent hydrocarbon group which has a steroid skeleton and 17 to 50 carbon atoms, Yb1 and Yb2 each independently represent a divalent linking group having a hetero atom, Vb1 represents a divalent linking group containing a cyclic aliphatic hydrocarbon group, Vb2 represents an alkylene group, a fluorinated alkylene group, or a single bond, Rf1 represents a hydrogen atom, a fluorine atom, or a fluorinated alkyl group having 1 to 5 carbon atoms, m represents an integer of 1 or greater, and Mm+ represents an m-valent organic cation
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公开(公告)号：US20210141308A1
公开(公告)日：2021-05-13
申请号：US17089298
申请日：2020-11-04
发明人： Tsuyoshi Nakamura , Jiro YOKOYA , Hirokuni SAITO
IPC分类号： G03F7/039 , G03F7/20 , G03F7/32 , C08F220/28
摘要： A resist composition which contains a polymer compound having a constitutional unit (a01) represented by General Formula (a01-1), which contains a specific acid dissociable group represented by General Formula (a01-r-1) and a constitutional unit (a02) represented by General Formula (a02-1), which contains a specific cyanolactone structure, a proportion of the constitutional unit (a01) is more than 50% by mole and 70% by mole or less
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公开(公告)号：US10534264B2
公开(公告)日：2020-01-14
申请号：US15879206
申请日：2018-01-24
发明人： Tsuyoshi Nakamura , Kazuishi Tanno , JunYeob Lee
IPC分类号： G03F7/004 , G03F7/30 , G03F7/38 , C08F224/00 , C08F232/02 , C08F232/04 , C08F232/08 , G03F7/039 , G03F7/038 , G03F7/16 , G03F7/20 , G03F7/32 , C08F220/16 , C08F220/28
摘要： A resist composition which generates an acid through exposure and whose solubility in a developer changes by the action of an acid. The resist composition contains a polymer compound having at least two kinds of specific constituent units. A resist pattern forming method, including forming a resist film on a support using the resist composition, subjecting the resist film to exposure, and forming a resist pattern through patterning by developing the resist film having undergone exposure by using a developer.
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公开(公告)号：US09235123B2
公开(公告)日：2016-01-12
申请号：US14218357
申请日：2014-03-18
发明人： Tsuyoshi Nakamura , Kazuishi Tanno , Naoto Motoike , Yoshitaka Komuro , Tomoyuki Hirano , Masatoshi Arai
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/2041 , G03F7/30
摘要： A resist composition includes a high-molecular weight compound having a constituent unit (a0) represented by a general formula (a0-1), an acid generator component (B) which generates an acid upon exposure, and a photodegradable base (D1) which is decomposed upon exposure to lose acid diffusion controlling properties, and a mixing ratio of the component (D1) to the component (B) is 0.5 or more in terms of a molar ratio represented by (D1)/(B). In the formula (a0-1), R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Ya01 represents a single bond or a divalent linking group; X01 represents a sulfur atom or an oxygen atom; and Ra01 represents an optionally substituted cyclic group, an optionally substituted chain alkyl group, or an optionally substituted chain alkenyl group.
摘要翻译： 抗蚀剂组合物包括具有由通式（a0-1）表示的结构单元（a0），暴露时产生酸的酸产生剂组分（B））和可光降解碱（D1）的高分子量化合物， 在暴露时分解以失去酸扩散控制性质，组分（D1）与组分（B）的混合比以（D1）/（B）表示的摩尔比计为0.5以上。 式（a0-1）中，R表示氢原子，碳原子数1〜5的烷基或碳原子数1〜5的卤代烷基。 Ya01表示单键或二价连接基团; X01表示硫原子或氧原子; 和Ra01表示任选取代的环状基团，任选取代的链烷基或任选取代的链烯基。
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