公开(公告)号：US11265009B2

公开(公告)日：2022-03-01

申请号：US16730612

申请日：2019-12-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Keliu Shu ,  Gary Franklin Chard ,  William Robert Krenik

IPC: H03M1/00 ,  H03M1/66 ,  H03M1/06 ,  G06F1/03

Abstract: A circuit includes a phase-locked loop having a phase-locked loop output to provide a first phase signal and a second phase signal phase delayed with respect to the first phase signal. The circuit further includes a digital circuit having a digital circuit input and an output. The digital circuit input couples to the phase-locked loop output. On the digital circuit output, the digital circuit is configured to provide a first digital-to-analog converter (DAC) enable signal and a second DAC enable signal. The circuit also includes first and second DACs. The first DAC is coupled to the digital circuit. The first DAC has a first enable input coupled to the digital circuit output to receive the first DAC enable signal. The second DAC is coupled to the digital circuit. The second DAC has a second enable input coupled to the digital circuit output to receive the second DAC enable signal.

公开(公告)号：US10396746B2

公开(公告)日：2019-08-27

申请号：US14970676

申请日：2015-12-16

Applicant: Texas Instruments Incorporated

Inventor： Byron Neville Burgess ,  William Robert Krenik ,  Stuart M. Jacobsen

IPC: H03H3/02 ,  H03H9/10 ,  H03H9/02 ,  H03H9/17 ,  H01L23/498 ,  H01L23/31

Abstract: A method of forming an integrated resonator apparatus includes depositing alternating dielectric layers of lower and higher acoustic impedance materials over a substrate. First and second resonator electrodes are formed over the alternating dielectric layers, with a piezoelectric layer located between the first and second resonator electrodes. A mass bias is formed over the first and second resonator electrodes. The mass bias, first and second electrodes, piezoelectric layer, and alternating dielectric layers may be encapsulated with a plastic mold fill.

公开(公告)号：US20150108969A1

公开(公告)日：2015-04-23

申请号：US14508079

申请日：2014-10-07

Applicant: Texas Instruments Incorporated

Inventor： William Robert Krenik

IPC: G01D5/20

CPC classification number: G01D5/2258

Abstract: A linear variable differential transformer (“LVDT”) including a semiconductor substrate and a plurality of coils formed at least partially on the substrate.

Abstract translation: 一种线性可变差动变压器（“LVDT”），包括半导体衬底和至少部分地形成在衬底上的多个线圈。

公开(公告)号：US09129886B2

公开(公告)日：2015-09-08

申请号：US13670735

申请日：2012-11-07

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Stuart M. Jacobsen ,  Sridhar Ramaswamy ,  William Robert Krenik

IPC: H01L41/02 ,  H01L27/20 ,  H03H9/05 ,  H03H9/17

CPC classification number: H01L27/20 ,  H01L41/29 ,  H03H9/0542 ,  H03H9/175

Abstract: A semiconductor device comprises a semiconductor wafer; a piezoelectric resonator formed on the wafer, and an active circuit also formed on the wafer. The active circuit (e.g., a frequency divider) is electrically connected to the piezoelectric resonator.

Abstract translation: 半导体器件包括半导体晶片; 形成在晶片上的压电谐振器和还形成在晶片上的有源电路。 有源电路（例如，分频器）电连接到压电谐振器。

公开(公告)号：US11799436B2

公开(公告)日：2023-10-24

申请号：US16551757

申请日：2019-08-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Byron Neville Burgess ,  William Robert Krenik ,  Stuart M. Jacobsen

IPC: H03H3/04 ,  H03H9/10 ,  H03H3/02 ,  H03H9/02 ,  H03H9/17 ,  H01L23/498 ,  H01L23/31 ,  H03H9/05

CPC classification number: H03H3/02 ,  H03H3/04 ,  H03H9/02102 ,  H03H9/02149 ,  H03H9/1007 ,  H03H9/1057 ,  H03H9/175 ,  H01L23/3107 ,  H01L23/3171 ,  H01L23/49838 ,  H03H9/0542 ,  H03H2003/023 ,  H03H2003/027 ,  Y10T29/42 ,  Y10T29/49171 ,  Y10T29/49172

Abstract: A method of forming a resonator includes forming top and bottom dielectric structures over a substrate. A piezoelectric layer is formed between the top and bottom dielectric structures. A bottom electrode is formed between the piezoelectric layer and the bottom dielectric structure, and a top electrode is formed between the piezoelectric layer and the top dielectric structure. A metal layer is formed over the top dielectric structure and is patterned, thereby forming a first contact pad making electrical contact to the top electrode, a second contact pad making electrical contact with the bottom electrode, and a mass bias located over the top dielectric structure.

公开(公告)号：US09305971B2

公开(公告)日：2016-04-05

申请号：US14816266

申请日：2015-08-03

Applicant: Texas Instruments Incorporated

Inventor： Stuart M. Jacobsen ,  Sridhar Ramaswamy ,  William Robert Krenik

IPC: H01L27/20 ,  H01L41/29 ,  H03H9/05 ,  H03H9/17

CPC classification number: H01L27/20 ,  H01L41/29 ,  H03H9/0542 ,  H03H9/175

Abstract: A semiconductor device comprises a semiconductor wafer; a piezoelectric resonator formed on the wafer, and an active circuit also formed on the wafer. The active circuit (e.g., a frequency divider) is electrically connected to the piezoelectric resonator.