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公开(公告)号：US10396746B2
公开(公告)日：2019-08-27
申请号：US14970676
申请日：2015-12-16
Applicant: Texas Instruments Incorporated
Inventor： Byron Neville Burgess , William Robert Krenik , Stuart M. Jacobsen
Abstract: A method of forming an integrated resonator apparatus includes depositing alternating dielectric layers of lower and higher acoustic impedance materials over a substrate. First and second resonator electrodes are formed over the alternating dielectric layers, with a piezoelectric layer located between the first and second resonator electrodes. A mass bias is formed over the first and second resonator electrodes. The mass bias, first and second electrodes, piezoelectric layer, and alternating dielectric layers may be encapsulated with a plastic mold fill.
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公开(公告)号：US11799436B2
公开(公告)日：2023-10-24
申请号：US16551757
申请日：2019-08-27
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Byron Neville Burgess , William Robert Krenik , Stuart M. Jacobsen
CPC classification number: H03H3/02 , H03H3/04 , H03H9/02102 , H03H9/02149 , H03H9/1007 , H03H9/1057 , H03H9/175 , H01L23/3107 , H01L23/3171 , H01L23/49838 , H03H9/0542 , H03H2003/023 , H03H2003/027 , Y10T29/42 , Y10T29/49171 , Y10T29/49172
Abstract: A method of forming a resonator includes forming top and bottom dielectric structures over a substrate. A piezoelectric layer is formed between the top and bottom dielectric structures. A bottom electrode is formed between the piezoelectric layer and the bottom dielectric structure, and a top electrode is formed between the piezoelectric layer and the top dielectric structure. A metal layer is formed over the top dielectric structure and is patterned, thereby forming a first contact pad making electrical contact to the top electrode, a second contact pad making electrical contact with the bottom electrode, and a mass bias located over the top dielectric structure.
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