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公开(公告)号：US3425879A
公开(公告)日：1969-02-04
申请号：US3425879D
申请日：1965-10-24
Applicant: TEXAS INSTRUMENTS INC
Inventor： SHAW DON W , MEHAL EDWARD W
IPC: H01L21/20 , H01L21/8222 , H01L27/06 , H03G3/20 , H01L7/36
CPC classification number: H01L27/0658 , H01L21/02381 , H01L21/02395 , H01L21/02433 , H01L21/02532 , H01L21/02546 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/8222 , Y10S148/017 , Y10S148/026 , Y10S148/029 , Y10S148/043 , Y10S148/049 , Y10S148/051 , Y10S148/085 , Y10S148/106 , Y10S148/115 , Y10S148/148
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2.发明授权
公开(公告)号：US3660312A
公开(公告)日：1972-05-02
申请号：US3660312D
申请日：1960-03-21
Applicant: TEXAS INSTRUMENTS INC
Inventor： JOHNSON ROWLAND E , MEHAL EDWARD W
CPC classification number: C30B29/40 , C30B11/00 , H01L21/00 , H01L29/00 , Y10S148/107
Abstract: METHOD OF MAKING GROUP III-V COMPOUND SEMICONDUCTOR HAVING THE REQUISTE IMPURITY LEVEL FOR DIRECT FABRICATION INTO TUNNEL DIODES. IN A REACTION CHAMBER, A HIGH TEMPERATURE ZONE CONTAINING A MIXTURE OF FIRST ELEMENT (E.G. GALLIUM) AND EXCESS DOPING AGENT (E.G. ZINC), AND A LOW TEMPERATURE ZONE CONTAINING EXCESS SECOND ELEMENT (E.G. ARSENIC) ARE PROVIDED. THE HEATING TEMPERATURE IN THE ZONES ARE CONTROLLED SO THAT SUFFICIENT SECOND ELEMENT IS VAPORIZED AND ENOUGH MIXTURE OF FIRST ELEMENT AND DOPING AGENT ARE MAINTAINED ABOVE THE MELTING POINT OF THE COMPOUND TO ASSURE REACTION TO GIVE A STOICHIOMETRIC MELT OF COMPOUND. A TEMPERATURE GRADIENT IS ESTABLISHED THROUGH SAID MELT, AND THE TEMPERATURE OF THE HIGH TEMPERATURE ZONE IS LOWERED WHILE MAINTAINING SAID TEMPERATURE GRADIENT TO FREEZE SAID MELT PROGRESSIVELY FROM ONE END.
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3.发明授权Method for depositing a single crystal on an amorphous film, method for manufacturing a metal base transistor, and a thin-film, metal base transistor 失效用于在非晶膜上沉积单晶的方法，制造金属基晶体管的方法和薄膜金属基晶体管
公开(公告)号：US3372069A
公开(公告)日：1968-03-05
申请号：US31791763
申请日：1963-10-22
Applicant: TEXAS INSTRUMENTS INC
Inventor： BAILEY LOUIS G , MEHAL EDWARD W
CPC classification number: H01L21/2022 , H01L27/00 , Y10S117/913 , Y10S148/017 , Y10S148/029 , Y10S148/049 , Y10S148/056 , Y10S148/115 , Y10S148/142 , Y10S148/152 , Y10S148/158
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公开(公告)号：US3361530A
公开(公告)日：1968-01-02
申请号：US60065366
申请日：1966-12-09
Applicant: TEXAS INSTRUMENTS INC
Inventor： JOHNSON ROWLAND E , MEHAL EDWARD W
CPC classification number: C30B25/00 , C22C1/007 , C30B29/42 , Y10S420/903
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公开(公告)号：US3613226A
公开(公告)日：1971-10-19
申请号：US3613226D
申请日：1969-01-27
Applicant: TEXAS INSTRUMENTS INC
Inventor： HAISTY ROBERT W , JOHNSON ROWLAND E , MEHAL EDWARD W
IPC: H01L21/00 , H01L21/60 , H01L21/74 , H01L21/822 , H01L23/535 , H01L27/00 , H01L27/06 , B01J17/00 , H01L1/16
CPC classification number: H01L27/0688 , H01L21/00 , H01L21/743 , H01L21/8221 , H01L23/535 , H01L24/80 , H01L27/00 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/10329 , H01L2924/14
Abstract: DISCLOSED ARE METHODS FOR FORMING A PLURALITY OF INTEGRATED CIRCUITS IN THREE DIMENSIONS WITHIN A SINGLE BODY OF MONOCRYSTALLINE MATERIAL. THE METHOD INCLUDES FORMING A PLURALITY OF CIRCUIT FUNCTION-PERFORMING REGIONS LOCATED RESPECTIVELY IN SEPARATE SPACED APART LEVELS OF A MONOCRYSTALLINE BODY. REGIONS OF THE RESPECTIVE LAYERS ARE THEN ELECTRICALLY INTERCONNECTED BY CONDUCTIVE MEANS EXTENDING THROUGH THE BODY OF MONOCRYSTALLINE MATERIAL.
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Patent Agency Ranking
公开(公告)号：US3492175A
公开(公告)日：1970-01-27
申请号：US3492175D
申请日：1965-12-17
Applicant: TEXAS INSTRUMENTS INC
Inventor： CONRAD RAYMOND W , HAISTY ROBERT W , MEHAL EDWARD W
IPC: H01L21/205 , H01L7/36
CPC classification number: H01L21/02631 , H01L21/02395 , H01L21/02546 , H01L21/02579 , H01L21/02581 , H01L21/0262 , Y10S148/04 , Y10S148/049 , Y10S148/056 , Y10S148/065 , Y10S252/951 , Y10S438/925
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公开(公告)号：US3094388A
公开(公告)日：1963-06-18
申请号：US85906059
申请日：1959-12-11
Applicant: TEXAS INSTRUMENTS INC
Inventor： JOHNSON ROWLAND E , MEHAL EDWARD W
CPC classification number: C22C1/007 , A21D2/16 , C01B25/06 , C01B35/04 , Y10S148/049 , Y10S148/056 , Y10S148/065 , Y10S420/903
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公开(公告)号：US3322581A
公开(公告)日：1967-05-30
申请号：US50453465
申请日：1965-10-24
Applicant: TEXAS INSTRUMENTS INC
Inventor： HENDRICKSON GENE R , SHAW DON W , MEHAL EDWARD W
CPC classification number: H01L27/00 , Y10S148/029 , Y10S148/05 , Y10S148/056 , Y10S148/142
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9.发明授权Method of making degeneratively doped group iii-v compound semiconductor material 失效制备退化掺杂的III-v族化合物半导体材料的方法
公开(公告)号：US3092591A
公开(公告)日：1963-06-04
申请号：US1634560
申请日：1960-03-21
Applicant: TEXAS INSTRUMENTS INC
Inventor： JONES MORTON E , MEHAL EDWARD W
CPC classification number: C30B29/40 , C30B11/00 , H01L21/00 , H01L29/00 , Y10S148/107
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公开(公告)号：US3039755A
公开(公告)日：1962-06-19
申请号：US7420560
申请日：1960-12-06
Applicant: TEXAS INSTRUMENTS INC
Inventor： MEHAL EDWARD W
IPC: C22B30/04
CPC classification number: C22B30/04
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