公开(公告)号：US3277006A

公开(公告)日：1966-10-04

申请号：US49818065

申请日：1965-09-10

Applicant: TEXAS INSTRUMENTS INC

Inventor： JOHNSON ROWLAND E ,  WURST JR ERNEST C

IPC: C30B11/00 ,  H01L21/00 ,  H01L29/00

CPC classification number: C30B29/40 ,  C30B11/00 ,  H01L21/00 ,  H01L29/00 ,  Y10S148/107 ,  Y10S252/95 ,  Y10S438/925 ,  Y10S438/979

公开(公告)号：US3259815A

公开(公告)日：1966-07-05

申请号：US20605062

申请日：1962-06-28

Applicant: TEXAS INSTRUMENTS INC

Inventor： JOHNSON ROWLAND E ,  WURST JR ERNEST C

IPC: C30B11/00 ,  H01L21/00 ,  H01L29/00

CPC classification number: C30B29/42 ,  C30B11/00 ,  C30B29/40 ,  H01L21/00 ,  H01L29/00 ,  Y10S257/919

公开(公告)号：US3611060A

公开(公告)日：1971-10-05

申请号：US3611060D

申请日：1969-11-17

Applicant: TEXAS INSTRUMENTS INC

Inventor： JOHNSON ROWLAND E ,  HAISTY ROBERT W

IPC: H01L45/00 ,  H03K3/02 ,  H01L11/00

CPC classification number: H01L45/04 ,  H01L45/1206 ,  H01L45/144 ,  H03K3/02

Abstract: Disclosed is a three terminal switching device using a nonoxide glass as the active elemental material therein. In one specific embodiment the switch includes a first nonoxide active glass film evaporated on a conductive base of aluminum. A conductive gold strip is formed over a portion of the first nonoxide glass film and a second nonoxide active glass film is formed partially over the gold strip and the first glass film. Electrical contacts are made to the conductive base, the conductive strip and the second nonoxide glass film. With a biasing voltage applied to the base contact and the film contact, a voltage pulse of proper polarity applied to the gold strip contact turns the device on, and while in this on condition, a voltage pulse of the opposite polarity turns the device off.

公开(公告)号：US3613226A

公开(公告)日：1971-10-19

申请号：US3613226D

申请日：1969-01-27

Applicant: TEXAS INSTRUMENTS INC

Inventor： HAISTY ROBERT W ,  JOHNSON ROWLAND E ,  MEHAL EDWARD W

IPC: H01L21/00 ,  H01L21/60 ,  H01L21/74 ,  H01L21/822 ,  H01L23/535 ,  H01L27/00 ,  H01L27/06 ,  B01J17/00 ,  H01L1/16

CPC classification number: H01L27/0688 ,  H01L21/00 ,  H01L21/743 ,  H01L21/8221 ,  H01L23/535 ,  H01L24/80 ,  H01L27/00 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/10329 ,  H01L2924/14

Abstract: DISCLOSED ARE METHODS FOR FORMING A PLURALITY OF INTEGRATED CIRCUITS IN THREE DIMENSIONS WITHIN A SINGLE BODY OF MONOCRYSTALLINE MATERIAL. THE METHOD INCLUDES FORMING A PLURALITY OF CIRCUIT FUNCTION-PERFORMING REGIONS LOCATED RESPECTIVELY IN SEPARATE SPACED APART LEVELS OF A MONOCRYSTALLINE BODY. REGIONS OF THE RESPECTIVE LAYERS ARE THEN ELECTRICALLY INTERCONNECTED BY CONDUCTIVE MEANS EXTENDING THROUGH THE BODY OF MONOCRYSTALLINE MATERIAL.

公开(公告)号：US3094388A

公开(公告)日：1963-06-18

申请号：US85906059

申请日：1959-12-11

Applicant: TEXAS INSTRUMENTS INC

Inventor： JOHNSON ROWLAND E ,  MEHAL EDWARD W

IPC: A21D2/16 ,  C01B25/06 ,  C01B35/04 ,  C22C1/00

CPC classification number: C22C1/007 ,  A21D2/16 ,  C01B25/06 ,  C01B35/04 ,  Y10S148/049 ,  Y10S148/056 ,  Y10S148/065 ,  Y10S420/903

公开(公告)号：US3361530A

公开(公告)日：1968-01-02

申请号：US60065366

申请日：1966-12-09

Applicant: TEXAS INSTRUMENTS INC

Inventor： JOHNSON ROWLAND E ,  MEHAL EDWARD W

IPC: C22C1/00 ,  C30B25/00

CPC classification number: C30B25/00 ,  C22C1/007 ,  C30B29/42 ,  Y10S420/903

公开(公告)号：US3348045A

公开(公告)日：1967-10-17

申请号：US45012565

申请日：1965-04-22

Applicant: TEXAS INSTRUMENTS INC

Inventor： BRAU MAURICE J ,  JOHNSON ROWLAND E ,  PATTERSON ROBERT J

IPC: C03C3/32

CPC classification number: C03C3/321

公开(公告)号：US3660312A

公开(公告)日：1972-05-02

申请号：US3660312D

申请日：1960-03-21

Applicant: TEXAS INSTRUMENTS INC

Inventor： JOHNSON ROWLAND E ,  MEHAL EDWARD W

IPC: C30B11/00 ,  H01L21/00 ,  H01L29/00 ,  H01B1/06 ,  H01L3/20

CPC classification number: C30B29/40 ,  C30B11/00 ,  H01L21/00 ,  H01L29/00 ,  Y10S148/107

Abstract: METHOD OF MAKING GROUP III-V COMPOUND SEMICONDUCTOR HAVING THE REQUISTE IMPURITY LEVEL FOR DIRECT FABRICATION INTO TUNNEL DIODES. IN A REACTION CHAMBER, A HIGH TEMPERATURE ZONE CONTAINING A MIXTURE OF FIRST ELEMENT (E.G. GALLIUM) AND EXCESS DOPING AGENT (E.G. ZINC), AND A LOW TEMPERATURE ZONE CONTAINING EXCESS SECOND ELEMENT (E.G. ARSENIC) ARE PROVIDED. THE HEATING TEMPERATURE IN THE ZONES ARE CONTROLLED SO THAT SUFFICIENT SECOND ELEMENT IS VAPORIZED AND ENOUGH MIXTURE OF FIRST ELEMENT AND DOPING AGENT ARE MAINTAINED ABOVE THE MELTING POINT OF THE COMPOUND TO ASSURE REACTION TO GIVE A STOICHIOMETRIC MELT OF COMPOUND. A TEMPERATURE GRADIENT IS ESTABLISHED THROUGH SAID MELT, AND THE TEMPERATURE OF THE HIGH TEMPERATURE ZONE IS LOWERED WHILE MAINTAINING SAID TEMPERATURE GRADIENT TO FREEZE SAID MELT PROGRESSIVELY FROM ONE END.

公开(公告)号：US3622399A

公开(公告)日：1971-11-23

申请号：US3622399D

申请日：1968-12-31

Applicant: TEXAS INSTRUMENTS INC

Inventor： JOHNSON ROWLAND E

IPC: C22C1/00 ,  C01B19/04 ,  C22C1/02 ,  C22C11/00 ,  C30B1/02 ,  C30B1/06 ,  C30B11/00 ,  C30B29/48 ,  H01L21/208 ,  B01J17/00 ,  H01L7/00

CPC classification number: C30B1/06 ,  C30B1/02 ,  C30B29/48

Abstract: A method for producing homogeneous single crystal ingots of pseudobinary alloys having high-crystal perfection by rapidly quenching a homogeneous liquid mixture of the desired constituents to produce a homogeneous polycrystalline ingot, then very slowly passing the polycrystalline ingot through a thermal gradient unitl the ingot is at a maximum temperature just below the solidus termperature of the alloy, thus causing the grain boundaries to migrate through the ingot as a result of directional solid-state recrystallization, then slowly coolng the ingot.

公开(公告)号：US3505522A

公开(公告)日：1970-04-07

申请号：US3505522D

申请日：1967-04-13

Applicant: TEXAS INSTRUMENTS INC

Inventor： JOHNSON ROWLAND E ,  PATTERSON ROBERT J ,  TILTON ANDRE E

IPC: C03C3/32 ,  G01T1/16 ,  C03C3/30

CPC classification number: C03C3/323