公开(公告)号：US3708360A

公开(公告)日：1973-01-02

申请号：US3708360D

申请日：1970-06-09

Applicant: TEXAS INSTRUMENTS INC

Inventor： WAKEFIELD R ,  CUNNINGHAM J ,  HSWE M

IPC: H01L21/00 ,  H01L29/00 ,  H01L29/76 ,  B23B31/14

CPC classification number: H01L29/00 ,  H01L21/00 ,  H01L29/76 ,  Y10S148/043 ,  Y10S148/053 ,  Y10S148/139

Abstract: A LOW PARASITIC CAPACITANCE FIELD EFFECT TRANSISTOR IS FABRICATED BY THE UTILIZATION OF A SELF-ALIGNING GATE TECHNIQUE. A METAL GATE IS FORMED AND THEN, EMPLOYING THE GATE AS A MASK, LOW TEMPERATURE SCHOTTKY BARRIER SOURCE AND DRAIN JUNCTIONS ARE FORMED. THE TECHNIQUE IS PARTICULARLY USEFUL IN THE FABRICATION OF THE FIELD EFFECT TRNASISTOR AS AN ELEMENT OF A LARGE INTEGRATED CIRCUIT WHERE MANY SUCH ALIGNMENTS MUST BE MADE SIMULTANTEOUSLY.

D R A W I N G

公开(公告)号：US3793721A

公开(公告)日：1974-02-26

申请号：US3793721D

申请日：1971-08-02

Applicant: TEXAS INSTRUMENTS INC

Inventor： WAKEFIELD R ,  CUNNINGHAM J

IPC: H01L27/088 ,  H01L29/00 ,  H01L29/423 ,  H01L29/78 ,  B01J17/00

CPC classification number: H01L29/7835 ,  H01L27/088 ,  H01L29/4236 ,  H01L29/7801 ,  H01L29/7809 ,  H01L29/781 ,  H01L29/7813 ,  H01L29/7834 ,  Y10S148/051 ,  Y10S148/053

Abstract: An insulated gate field effect transistor inverter and method of fabrication is disclosed. The invention comprises two field effect transistors integrated on a semiconductor substrate. The configuration has a common source and is thus compatible with integrated circuit fabrication processes. The channel length of one of the two field effect transistors is made extremely small utilizing the method of the invention, enabling significant reduction in size of the inverter. In accordance with this method the channel length is determined by the distance between two accurately controlled diffusions, rather than conventional photolithographic techniques.

Abstract translation: 公开了一种绝缘栅场效应晶体管反相器及其制造方法。 本发明包括集成在半导体衬底上的两个场效应晶体管。 该配置具有共同的来源，因此与集成电路制造工艺兼容。 利用本发明的方法，使两个场效应晶体管之一的沟道长度非常小，能够显着减小逆变器的尺寸。 根据这种方法，通道长度由两个精确控制的扩散之间的距离决定，而不是常规的光刻技术。

公开(公告)号：US3844924A

公开(公告)日：1974-10-29

申请号：US23071172

申请日：1972-03-01

Applicant: TEXAS INSTRUMENTS INC

Inventor： CUNNINGHAM J ,  ORR C

IPC: C23C14/14 ,  H01L21/00 ,  H01L23/29 ,  H01L23/482 ,  H01L27/00 ,  C23C15/00

CPC classification number: H01L23/482 ,  C23C14/14 ,  H01L21/00 ,  H01L23/291 ,  H01L27/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed are methods for depositing multilayer ohmic contacts upon a substrate of semiconductor material disposed within a low pressure chamber; such including for example the particular features of upward sputtering of the various metal films, simultaneous sputtering of platinum with gold utilizing a sputtering cathode composed of platinum and gold, and adding hydrogen into an inert sputtering atmosphere to eliminate undesirable formation of oxides. This invention provides improved adhesion of the sputtered metal films to the semiconductor surface and the silicon oxide, and provides the formation of the metal film which is substantially free of pin holes and which has substantially uniform resistivity.

Abstract translation: 公开了一种在设置在低压室内的半导体材料的衬底上沉积多层欧姆接触的方法; 例如包括各种金属膜的向上溅射的特定特征，使用由铂和金构成的溅射阴极同时溅射铂，并将氢添加到惰性溅射气氛中以消除不期望的氧化物形成。 本发明提供了改进的溅射金属膜对半导体表面和氧化硅的粘合性，并且提供了基本上没有针孔并具有基本均匀电阻率的金属膜的形成。

公开(公告)号：US3833842A

公开(公告)日：1974-09-03

申请号：US1704070

申请日：1970-03-09

Applicant: TEXAS INSTRUMENTS INC

Inventor： CUNNINGHAM J ,  FULLER C

IPC: H01C1/146 ,  H01L21/00 ,  H01L21/283 ,  H01L3/00 ,  H01L5/00

CPC classification number: H01L21/00 ,  H01C1/146 ,  H01L21/283 ,  Y10S148/02 ,  Y10S148/147 ,  Y10T428/12528 ,  Y10T428/12674

Abstract: Disclosed is a tungsten-modifying metal ohmic contact and electrical interconnection system for semiconductor devices that are subjected to corrosive environments. A contact and interconnection system is formed using a layer composed of a mixture of tungsten and a modifier metal, such as titanium, the system having the desired characteristics of the tungsten system but with greatly increased corrosion resistance which allows devices using such a system to be mounted in nonhermetic packages.

公开(公告)号：US3754168A

公开(公告)日：1973-08-21

申请号：US3754168D

申请日：1970-03-09

Applicant: TEXAS INSTRUMENTS INC

Inventor： CUNNINGHAM J ,  FULLER C

IPC: H01L21/00 ,  H01L21/283 ,  H01L3/00 ,  H01L5/00

CPC classification number: H01L21/00 ,  H01L21/283 ,  Y10T428/12528 ,  Y10T428/12674

Abstract: Disclosed is a molybdenum-modifying metal ohmic contact and electrical interconnection system for semiconductor devices that are subjected to corrosive environments. A contact and interconnection system is formed using a layer composed of a mixture of molybdenum and a modifier metal, such as titanium, the system having the desired characteristics of the molybdenum system but with greatly increased corrosion resistance which allows devices using such a system to be mounted in nonhermetic packages.

Abstract translation: 公开了一种用于经受腐蚀性环境的半导体器件的钼修饰金属欧姆接触和电互连系统。 使用由钼和诸如钛的改性剂金属的混合物组成的层形成接触和互连系统，该系统具有钼系统的所需特性，但具有大大提高的耐腐蚀性，这允许使用这种系统的装置成为 安装在非密封包装中。